TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD Digital Transistors built-in resistors EMG11 dual digital transistors (NPN+NPN) SOT-553 FEATURES Two DTC123JCA chips in a package 1 Marking: G11 Equivalent circuit: Absolute maximum ratings (Ta=25℃) Symbol
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EMG11
OT-553
DTC123JCA
100MHz
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BF999
Abstract: No abstract text available
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
Nov-08-2002
BF99cal
BF999
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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bios programmer
Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP
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TM5800
TM5800-1000-ULP
CoolRun80
5800T100021
TM5800-1000-VLP
5800N100021
TM5800-1000-LP
5800P100021
bios programmer
sdr sdram pcb layout
TM5800-1000-LP
processor cross reference
cdq42
5800R100021
TM5500
TM5800
16M X 32 SDR SDRAM
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BB515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF999 LBs Pin Configuration 1=G 2=D Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Nov-08-2002
BB515
BF999
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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Original
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon RF Transistor BF 550 • For common emitter amplifier stages up to 300 MHz • For mixer applications in AM/FM radios and VHF TV tuners • Low feedback capacitance due to shield diffusion • Controlled low output conductance Type Marking
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Q62702-F944
OT-23
fl23SbDS
00bb7fi
EHTG7054
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PDF
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Bb515
Abstract: bf999
Text: BF 999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF 999 LBs Pin Configuration 1=G 2=D Package
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Original
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VPS05161
OT-23
EHT07315
EHT07316
BB515
EHM07024
Oct-26-1999
Bb515
bf999
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PDF
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bb515
Abstract: BF999
Text: BF999 Silicon N-Channel MOSFET Triode 3 For high-frequency stages up to 300 MHz preferably in FM applications 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF999 Marking LDs 1=G Pin Configuration 2=D 3=S Package
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BF999
VPS05161
EHT07315
EHT07316
BB515
EHM07024
Jun-28-2001
bb515
BF999
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PDF
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c22e
Abstract: Q62702-F944 transistor marking 550 g22E y21e QBF550 transistor BF 450
Text: PNP Silicon RF Transistor ● For common emitter amplifier stages up to 300 MHz ● For mixer applications in AM/FM radios and VHF TV tuners ● Low feedback capacitance due to shield diffusion ● Controlled low output conductance BF 550 Type Marking Ordering Code
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Q62702-F944
OT-23
c22e
Q62702-F944
transistor marking 550
g22E
y21e
QBF550
transistor BF 450
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Untitled
Abstract: No abstract text available
Text: TETMhEl 0Q0b31ß b£^ H PR X Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 POWEREX INC bMED r— MARKING RA20 4800A G & fl& rSl PUTDOSG
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0Q0b31Ã
BP107,
G-112
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BF450
Abstract: BF451 BF 450 IY21 Q62702-F312 SIEMENS marking IC marking jw SiEMENS PM 350 92 bf 451 tag 451
Text: SIEMENS BF 450 BF 451 PNP Silicon RF Transistors • For common emitter AM and FM stages • Low feedback capacitance due to shield diffusion Type Marking Ordering Code BF 450 BF 451 - Q62702-F312 Q62702-F313 Pin Configuration 1 2 3 E C Package1 B TO-92 Maximum Ratings
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Q62702-F312
Q62702-F313
0235bG5
235b05
00bb7fc
10MHz
BF450
BF451
BF 450
IY21
SIEMENS marking
IC marking jw
SiEMENS PM 350 92
bf 451
tag 451
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marking 34
Abstract: G110 UPG110B
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. FA 4.5 MAX LEAD 1 & 3 0.6 ± 0.06 3 2 4.6 MAX 4 MARKING 4.1 MIN +0.2 0.7 -0.1 4.1 MIN 1 LEAD 2 & 4 0.4 ± 0.06 1.48 MAX 0.1 ± 0.06 PART NUMBER
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UPG110B
24-Hour
marking 34
G110
UPG110B
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 1 20 LOC REVISIONS DIST FT ALL RIGHTS RESERVED. BY - 20 2 3 P LTR G11 DESCRIPTION DATE REVISED PER ECO-14-000579 DWN APVD NK 10MAY2014 MM POLARIZATION KEY SLOT D D PRELIMINARY - 0.8µm GOLD
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ECO-14-000579
10MAY2014
18OCT2000
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XC1700E
Abstract: 1736e xilinx 8 pin dip HW-130 SO20 XC1700 XC1701 17128e 17256e xilinx SO20 MARKING CODE
Text: g11 1 4 R DS027 v3.3 June 13, 2005 XC1700E, XC1700EL, and XC1700L Series Configuration PROMs Product Specification 8 Features • Low-power CMOS Floating Gate process • • XC1700E series are available in 5V and 3.3V versions • XC1700L series are available in 3.3V only
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DS027
XC1700E,
XC1700EL,
XC1700L
XC1700E
XC1700L
20-pin
44-pin
1736e
xilinx 8 pin dip
HW-130
SO20
XC1700
XC1701
17128e
17256e
xilinx SO20 MARKING CODE
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G501
Abstract: No abstract text available
Text: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 300mA Description 11mm Edison screw lamp Part No. G501-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 10 12 14 LIFE Hours 4,000 Dimension in mm. TEST VOLTS 6.5 Min. 270 CURRENT (mA) Nom. Max. 300 330 NOTES:
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300mA
G501-5
E10/13,
G501
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TDF024
Abstract: No abstract text available
Text: PRODUCT DATA SHEET Type Incandescent Size G11 G-3½ Rating 6.5V 1W Description 11mm Edison screw lamp Part No. G473-5 LIGHT OUTPUT (Lm) Min. Nom. Max. 4.8 6.0 7.2 LIFE Hours 3,000 Dimension in mm. TEST VOLTS 6.5 Min. 135 CURRENT (mA) Nom. Max. 150 165 NOTES:
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G473-5
E10/13,
TDF024
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G1184-18
Abstract: to263-5 capacitor 100uf 25v applications electrolytic capacitor 100uF 50v of electrolytic capacitor 100uf 25v 100uF 25v capacitor TO-263-5 Package G1184-25 G1184TG1U Voltage Regulator ATX
Text: G1184 Global Mixed-mode Technology Inc. 4A Ultra Low-Dropout Linear Regulator Features General Description The G1184 is a low dropout linear regulator to provide well regulated supply for applications requiring lower voltage from such as, 3.3V PC ATX
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G1184
G1184
O-263-5
G1184-18
to263-5
capacitor 100uf 25v applications
electrolytic capacitor 100uF 50v
of electrolytic capacitor 100uf 25v
100uF 25v capacitor
TO-263-5 Package
G1184-25
G1184TG1U
Voltage Regulator ATX
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XC1700E
Abstract: xilinx 1736e 1702L 1702l transistor 17512L xilinx 8 pin dip XC1701 HW-130 SO20 XC1700
Text: g11 1 4 R DS027 v3.2 September 7, 2004 XC1700E, XC1700EL, and XC1700L Series Configuration PROMs Product Specification 8 Features • Low-power CMOS Floating Gate process • • XC1700E series are available in 5V and 3.3V versions • XC1700L series are available in 3.3V only
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DS027
XC1700E,
XC1700EL,
XC1700L
XC1700E
XC1700L
20-pin
44-pin
xilinx 1736e
1702L
1702l transistor
17512L
xilinx 8 pin dip
XC1701
HW-130
SO20
XC1700
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 45-RELS/K2-G110 Order No.: 2950721 The illustration shows version EMG 45-RELS, with plug-in socket for cradle relay, size 2 Relay module, with plug-in base for KAMMRELAIS size 2, contact: B
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45-RELS/K2-G110
45-RELS,
IF-2002)
45-RELS/K2-G110
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 22-RELS/K1-G110 Order No.: 2950420 The illustration shows version EMG 22-RELS, with plug-in socket for cradle relay, size 1 Relay module, with plug-in base for KAMMRELAIS size 1, contact: B
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22-RELS/K1-G110
22-RELS,
IF-2002)
22-RELS/K1-G110
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog EMG 37-RELS/K2-G110 Order No.: 2946735 The illustration shows version EMG 37-RELS, with plug-in socket for cradle relay, size 2 Relay module, with plug-in base for KAMMRELAIS size 2, contact: F
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37-RELS/K2-G110
37-RELS,
IF-2002)
37-RELS/K2-G110
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PDF
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ak 957 1542 d
Abstract: AN-994 IRL530N IRL530NL IRL530NS
Text: PD - 91349C IRL530NS/L HEXFET Power MOSFET Advanced Process Technology l Surface Mount IRL530NS l Low-profile through-hole (IRL530NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D VDSS =100V RDS(on) = 0.10Ω G11
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91349C
IRL530NS/L
IRL530NS)
IRL530NL)
die22
EIA-418.
ak 957 1542 d
AN-994
IRL530N
IRL530NL
IRL530NS
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