MARKING EPB Search Results

1443557

Abstract: JGL36250 JJL36250 1432555 1453586 JLL36250 1453552 1433553 1413400 FPB23570CH
Contextual Info: 13300 Van Camp Road P.O. Box 468 Bowling Green, OH 43402 Standard Power Distribution Blocks With High Short-Circuit Current Ratings Marathon offers 600 Volt Power Distribution Blocks with high SCCR’s in response to new 2005 NEC and UL508A marking requirements

Contextual Info: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L

C541U

Abstract: C541U-1E
Contextual Info: Microcontrollers Errata Sheet 29 June 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C541U

Abstract: C541U-1E
Contextual Info: Microcontrollers Errata Sheet Nov 11, 1999 / Release 1.2 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C541U

Abstract: C541U-1E full-64
Contextual Info: Microcontrollers Errata Sheet Aug 1, 1999 / Release 1.1 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

C541U

Abstract: C541U-1E P-SDIP-52
Contextual Info: Microcontrollers Errata Sheet 10 July 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

Contextual Info: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating  Microwave ovens

Contextual Info: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications

Contextual Info: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications • Industrial Motor Drive

Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters

Contextual Info: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

0/b40 B2 RECTIFIER 400V

Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Contextual Info: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive  Inverters

Contextual Info: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E G Gate Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C

Contextual Info: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter

Contextual Info: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters

Contextual Info: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter Benefits Low VCE(ON) and Switching Losses

Contextual Info: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF

Contextual Info: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient

IRGP4740DPBF

Contextual Info: IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 24A E G G Gate C Collector Features C E IRGP4740D-EPbF TO-247AD

Contextual Info: IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF TO-247AC E n-channel Applications

Contextual Info: Home Phone Networking Transformer ELECTRONICS INC. EPB5211G • Designed for HPNA Filter Bridge Applications • Withstands IR Reflow Profile Processes • Hipot : 850 Vrms 1 second, Pri.-Sec. Electrical Parameters @ 25° C DCR (mΩ Max.) Primary OCL (µH ± 5%)

Contextual Info: Extract from the online catalog 4K-DST 6 FARBLOS Order No.: 1020034 4-chamber marker carriers, can be optionally labeled with insert strips ES. or 4 snap-in profiles EPB Product notes

marking EPB

Contextual Info: Extract from the online catalog 4K-DST 6 FARBLOS Order No.: 1020034 4-chamber marker carriers, can be optionally labeled with insert strips ES. or 4 snap-in profiles EPB Product notes