A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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siemens sirius 3r
Abstract: Sprecher Schuh CT 3-12 plotter ip-220 Transformer zkb Sirius 3SB3 sti es 1682 IP220 Legrand symbol electric manual legrand
Text: Terminal Markers 4 Terminal Markers Almost any marking task involving any type of terminal block can be tackled using the Weidmüller range of terminal markers. Whether a clamping point needs multicharacter marking, ready-to-use markers with standard or custom printing, white or
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Untitled
Abstract: No abstract text available
Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips
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DLA10IM800UC
O-252
60747and
20130121b
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Untitled
Abstract: No abstract text available
Text: DLA10IM800UC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 10 A VF = 1.16 V Single Diode Part number DLA10IM800UC Marking on Product: MARLUI Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips
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DLA10IM800UC
O-252
60747and
20130121b
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DLA5P800UC
Abstract: No abstract text available
Text: DLA5P800UC High Efficiency Standard Rectifier VRRM = 2x 800 V I FAV = 5A VF = 1.12 V Phase leg Part number DLA5P800UC Marking on Product: M5RLUP Backside: anode/cathode 1 2/4 3 Features / Advantages: Applications: Package: TO-252 DPak ● Planar passivated chips
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DLA5P800UC
O-252
60747and
20130204a
DLA5P800UC
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips Very low leakage current
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O-252
60747and
20070320a
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Untitled
Abstract: No abstract text available
Text: DLA 10 IM 800 UC advanced V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 10 A 1.01 V Part number DLA 10 IM 800 UC 1 2 3 Marking on Product: MARLUI Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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O-252
60747and
20070320a
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fr-5 laminate
Abstract: SMD CU3 smd marking 4y 94v-0 RoHS wiring diagram LS-4Y GW marking code E176891
Text: SPECIFICATION FOR APPROVAL REF : PAGE: 1 PROD. SB1105□□□□1□-□□□ ABC'S DWG NO. SMD POWER INDUCTOR NAME ABC'S ITEM NO. Ⅰ﹒MECHANICAL DIMENSIONS： A B 68 Marking A B C D E F G H I C dot is start winding & Inductance code : : : : : : : : :
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SB11051-
Temp260
50sec
70sec
E176891
JL-180L
AR-001A
fr-5 laminate
SMD CU3
smd marking 4y
94v-0 RoHS wiring diagram
LS-4Y
GW marking code
E176891
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION A Add top side marking in section 6.3.-phn DATE APPROVED 13-03-21 Thomas M. Hess Prepared in accordance with ASME Y14.24 Vendor item drawing REV PAGE REV PAGE REV STATUS OF PAGES REV A PAGE 1 A 2 3 PMIC N/A PREPARED BY Phu H. Nguyen
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V62/12618
V62/12618-01XE
CDCV304IPWREP
CDCV304-EP
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DLA60I1200HA
Abstract: No abstract text available
Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number DLA 60 I 1200 HA 3 1 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-247
60747and
DLA60I1200HA
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DLA60I1200HA
Abstract: No abstract text available
Text: DLA 60 I 1200 HA tentative VRRM = I FAV = VF = Low Voltage Standard Rectifier Single Diode 1200 V 60 A 1V Part number 3 1 Backside: cathode Features / Advantages: Package: Applications: Housing: TO-247 Diode for main rectification For single and three phase
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O-247
f0090720
60747and
DLA60I1200HA
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Untitled
Abstract: No abstract text available
Text: DLA 20 IM 800 PC advanced V RRM = I FAV = VF = Standard Rectifier Single Diode 800 V 20 A 1.12 V Part number 1 2 3 Backside: cathode Applications: Features / Advantages: Planar passivated chips Very low leakage current Very low forward voltage drop Improved thermal behaviour
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O-263
DLA20IM800PC
O-263AB
60747and
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DLA40IM800PC
Abstract: IXYS DATE CODE
Text: DLA 40 IM 800 PC tentative V RRM = I FAV = VF = High Efficiency Standard Rectifier Single Diode 800 V 40 A 1.15 V Part number DLA 40 IM 800 PC 1 2 3 Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current
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O-263
DLA40IM800PC
60747and
DLA40IM800PC
IXYS DATE CODE
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CD4504B-EP
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION A Correct terminal connections in figure 2. - PHN DATE APPROVED 13-01-16 Thomas M. Hess CURRENT DESIGN ACTIVITY CAGE CODE 16236 HAS CHANGED NAMES TO: DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 Prepared in accordance with ASME Y14.24
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V62/09606-01XE
CD4504BMPWREP
4504BEP
V62/09606
CD4504B-EP
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MS 1307
Abstract: No abstract text available
Text: DLA60I1200HA High Efficiency Standard Rectifier VRRM = 1200 V I FAV = 60 A VF = 1.1 V Single Diode Part number DLA60I1200HA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-247 ● Planar passivated chips ● Very low leakage current
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DLA60I1200HA
O-247
60747and
20121016a
MS 1307
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Untitled
Abstract: No abstract text available
Text: DLA20IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 20 A VF = 1.24 V Single Diode Part number DLA20IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DLA20IM800PC
O-263
60747and
20121026a
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Untitled
Abstract: No abstract text available
Text: DLA20IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 20 A VF = 1.24 V Single Diode Part number DLA20IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DLA20IM800PC
O-263
60747and
20121026a
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DSI30-08AS
Abstract: DLA40IM800PC D2PAK marking code 300
Text: DLA40IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 40 A VF = 1.26 V Single Diode Part number DLA40IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DLA40IM800PC
O-263
60747and
20130116a
DSI30-08AS
DLA40IM800PC
D2PAK marking code 300
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DLA40IM800PC
Abstract: DSI30-08AS D2PAK marking code 300 D2Pak Package dimensions D2Pak-2 Package
Text: DLA40IM800PC High Efficiency Standard Rectifier VRRM = 800 V I FAV = 40 A VF = 1.26 V Single Diode Part number DLA40IM800PC Backside: cathode 1 3 2/4 Features / Advantages: Applications: Package: TO-263 D2Pak ● Planar passivated chips ● Very low leakage current
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DLA40IM800PC
O-263
60747and
20130116a
DLA40IM800PC
DSI30-08AS
D2PAK marking code 300
D2Pak Package dimensions
D2Pak-2 Package
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY 1 2 3 4 5 Steve L. Duncan STANDARD MICROCIRCUIT DRAWING 6 7 8 9 10 11 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 CHECKED BY http://www.landandmaritime.dla.mil/
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11-BIT,
5962-1121S
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Untitled
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY 1 2 3 4 5 RICK OFFICER STANDARD MICROCIRCUIT DRAWING 6 7 8 9 10 11 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil
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Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS REV OF SHEETS SHEET PMIC N/A PREPARED BY 1 2 3 4 5 Jeffery Tunstall STANDARD MICROCIRCUIT DRAWING 6 7 8 9 10 11 12 13 DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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Untitled
Abstract: No abstract text available
Text: 32E ]> • 623 3350 0Qlb747 Q « S I P NPN Silicon RF Transistor T - *51- 17 BF 599 SIEMENS/ SPCLi SEMICONDS_ • Suitable for common emitter RF, IF amplifiers • Low collector-base capacitance due to contact shield diffusion Type Marking
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0Qlb747
Q62702-F550
Q62702-F979
T-31-17
23b320
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