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    MARKING D15 Search Results

    MARKING D15 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING D15 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    d1510

    Abstract: K D1510 Kd1510 KTD1510 kec marking N 3p transistor Diode MarkING N
    Text: SEMICONDUCTOR KTD1510 MARKING SPECIFICATION TO-3P N PACKAGE 1. Marking method Laser Marking or Ink Marking 2. Marking K D1510 816 No. Item Marking 1 KEC K KEC CORP. 2 Device Name D1510 KTD1510 3 hFE Grade 4 Lot No. 98.06.23 Revision No : Description 8 Year


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    KTD1510 D1510 d1510 K D1510 Kd1510 KTD1510 kec marking N 3p transistor Diode MarkING N PDF

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


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    AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23 PDF

    spansion top marking

    Abstract: spansion marking date code Spansion wafer marking RG04 fd1h spansion marking marking 0E marking 1F spansion date code marking S29CD032G
    Text: S29CD-G Electronic Marking Supplement This document includes details of the electronic marking information that will be stored and locked in the S29CD016G and S29CD032G one-time-programmable Secured Silicon Sector. The Secured Silicon Sector will no longer be available as a


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    S29CD-G S29CD016G S29CD032G spansion top marking spansion marking date code Spansion wafer marking RG04 fd1h spansion marking marking 0E marking 1F spansion date code marking PDF

    J239

    Abstract: spansion marking date code S29CL-J spansion date code marking jv3 Marking Fab25 JV3 diode marking P53 Marking information diode Marking code jv3 f
    Text: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in


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    S29CD-J/S29CL-J S29CD016J/S29CL016J S29CD016J/S29CL016J. S29CD016J J239 spansion marking date code S29CL-J spansion date code marking jv3 Marking Fab25 JV3 diode marking P53 Marking information diode Marking code jv3 f PDF

    spansion marking date code

    Abstract: J239 OUTPUT SORT CIRCUIT PROTECTION spansion date code marking transistor marking 1f C80H S29CD016J S29CL-J spansion marking
    Text: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in


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    S29CD-J/S29CL-J S29CD016J/S29CL016J S29CD016J/S29CL016J. S29CD016J spansion marking date code J239 OUTPUT SORT CIRCUIT PROTECTION spansion date code marking transistor marking 1f C80H S29CL-J spansion marking PDF

    A083

    Abstract: marking A083 C121 b083 A121 B100 B121 C100 3565 51121
    Text: Aluminum Electrolytic Capacitors MGA Features ‧Endurance with ripple current: 105℃, 2,000 hours ‧RoHS Compliance Sleeve & Marking Color: Black & White SPECIFICATIONS Items Category Temperature Range Capacitance Tolerance Performance -40℃ ~ +105℃


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    120Hz, 120Hz) A083 marking A083 C121 b083 A121 B100 B121 C100 3565 51121 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 REVISIONS REV □ESCRIPTIDN 0 INITIAL RELEASE □ATE 01/29/01 APPROVED WR/OFO TOP VIEW - CAP REMDVED C C G NDTES: 1 DETECTOR CONCENTRIC TO TOP CAP 2) FINISH: CAP. HEADER AND PINS ARE GUILD PLATED. A WITHIN ±.D15. PRDDUCT MARKING. MATERIAL TYPE: ACTIVE AREA SIZE:


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    V31V01 J16-P1-R10M 460052PQ0 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 114-099R Features • High barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code


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    114-099R Q62702-A1006 OT-143 EHA07C E35bG5 D15G3Ã DlED30* PDF

    D155

    Abstract: B096 B115 C115 C130 C155 D115 D130 E157 77130
    Text: Aluminum Electrolytic Capacitors MEQ Features ‧Endurance with ripple current: 85℃, 20,000 hours ‧RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +85℃ Category Temperature Range at 120Hz, 20℃ ±20%


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    120Hz, 120Hz) D155 B096 B115 C115 C130 C155 D115 D130 E157 77130 PDF

    D155

    Abstract: ELECTROLYTIC CAPACITORS C155 b096 B115 C115 C130 C155 D115 D130 E157
    Text: Aluminum Electrolytic Capacitors MGK Features ‧Endurance with ripple current: 105℃, 5,000 hours ‧RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +105℃ Category Temperature Range at 120Hz, 20℃ ±20%


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    120Hz, 120Hz) D155 ELECTROLYTIC CAPACITORS C155 b096 B115 C115 C130 C155 D115 D130 E157 PDF

    3300uf 350v

    Abstract: B096 E157 transistor D195 C115 D130 D155 E171 transistor d115 B115
    Text: Aluminum Electrolytic Capacitors MEK Features ‧Endurance with ripple current: 85℃, 5,000 hours ‧ RoHS Compliance Sleeve & Marking Color: Black & Golden SPECIFICATIONS Items Performance -40℃ ~ +85℃ Category Temperature Range at 120Hz, 20℃ ±20%


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    120Hz, 120Hz) oB115 3300uf 350v B096 E157 transistor D195 C115 D130 D155 E171 transistor d115 B115 PDF

    c144

    Abstract: b083 B096 A083 C144 transistor transistor c144 A121 B100 C100 C121
    Text: Aluminum Electrolytic Capacitors MEA Features ‧Endurance with ripple current: 85℃, 2,000 hours ‧ RoHS Compliance Sleeve & Marking Color: Black & White SPECIFICATIONS Items Category Temperature Range Performance -40℃ ~ +85℃ -25℃ ~ +85℃ 10 ~ 100V


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    120Hz) 120Hz, c144 b083 B096 A083 C144 transistor transistor c144 A121 B100 C100 C121 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    BFT93 Q62702-F1063 OT-23 235b05 G122211 900MHz 235fc PDF

    l 7135

    Abstract: 5x7 DOT MATRIX LED DISPLAY DRIVER DLO7135 DLO-7135 5 inch 5x7 Dot Matrix Display 5x7 dot matrix display 14 pin ic 7135 led driver DLO-4135 DLG7137 led matrix 5x7 18
    Text: HIGH EFFICIENCY RED DLO4135/7135 GREEN DLG4137/7137 .43" Single Character DLO4135/7 .68" Single Character DLO7135/7 5x7 Dot Matrix Intelligent Display with Memory/Decoder/Driver DLO4135/4137 DLO7135/7137 Package Dimensions in Inches mm Device marking


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    DLO4135/7135 DLG4137/7137 DLO4135/7 DLO7135/7 DLO4135/4137 DLO7135/7137 DLO7135 DLO4135/7135/DLG4137/7137 l 7135 5x7 DOT MATRIX LED DISPLAY DRIVER DLO7135 DLO-7135 5 inch 5x7 Dot Matrix Display 5x7 dot matrix display 14 pin ic 7135 led driver DLO-4135 DLG7137 led matrix 5x7 18 PDF

    MMST8098

    Abstract: MMST5088 marking RAV marking GAA
    Text: Transistors/"Surface Mounting Type • SST3 Package/NPN Type Application Pre Amp Low Noise Amp Part No. BVceo V lc (mA) @|c & VCE f r (MHz) Cob (pF; Marking BC817-25 45 800 160 400 100 m A /1 V 150 6 G6B D15 BSR14 40 800 100 300 1 50m A /10V 300 8 GU8 D15


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    BC817-25 BSR14 BC847A BC847B BC847C BC848A BC848B BC848C BCW31 BCW32 MMST8098 MMST5088 marking RAV marking GAA PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM


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    Q62702-F1519 OT-323 IS21el2 G12171D PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon Variable Capacitance Diode BB 439 Preliminary Data • For V H F tuned circuit applications • High figure of merit VPS05176 Type Marking Ordering Code tape and reel BB 439 white 2 Q62702-B577 Pin Configuration Package1) SOD-323 o - - o


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    VPS05176 Q62702-B577 OD-323 CHA07M1 fi23SbQS D12DMSH PDF

    5800c

    Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
    Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V


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    TM5500/TM5800 TM5800-933 CoolRun80 5800C093310 TM5800-867 5800C086710 TM5800-800 5800A080010 TM5500-800 5800c bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800 PDF

    bios programmer

    Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
    Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP


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    TM5800 TM5800-1000-ULP CoolRun80 5800T100021 TM5800-1000-VLP 5800N100021 TM5800-1000-LP 5800P100021 bios programmer sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistors BCX 54 . BCX 56 Features • • • • For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCX 51 . BCX 53 PNP Type Marking Ordering Code (tape and reel)


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    Q62702-C954 Q62702-C1861 Q62702-C1731 Q62702-C1729 Q62702-C1730 Q62702-C1903 Q62702-C1614 Q62702-C1635 Q62702-C1613 OT-89 PDF

    block diagram of crusoe processor

    Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
    Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz


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    TM55E/TM58E TM58EX-933 58EXAE093321 TM58EL-800 58ELAD080021 TM55EL-667 55ELAC066721 TM55E/TM58E block diagram of crusoe processor bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon High-Voltage Transistors PZTA 42 PZTA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: PZTA 92, PZTA 93 PNP Type Marking Ordering Code (tape and reel) Pin Coni igura ion 4 1 2 3 Package1)


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    Q62702-Z2035 Q62702-Z2036 OT-223 t98-11-01 fi535b05 D15B4flb fl235bG5 PZTA42 235bQ5 D152Mflà PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor PZT 3906 • High DC current gain 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: PZT 3904 NPN Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) PZT 3906


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    Q62702-Z2030 OT-223 EHN00057 A235bG5 122M7C PDF

    SOT-23 marking 717

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Darlington Transistors • • • • BCV 26 BCV 46 For general AF applications High collector current High current gain Complementary types: BCV 27, BCV 47 NPN Type Marking Ordering Code (tape and reel) PinC‘onfigur ation 1 2 3 Package1)


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    Q62702-C1493 Q62702-C1475 OT-23 flE35bD5 BCV26 E35b05 SOT-23 marking 717 PDF