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    MARKING CODE YA TRANSISTOR Search Results

    MARKING CODE YA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE YA TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    marking code YA Transistor

    Abstract: TRANSISTOR MARKING CODE YA ya marking code STD361 marking code YA code Transistor ya
    Text: STD361 NPN Silicon Transistor PIN Connection Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application SOT-89 Ordering Information


    Original     		STD361 A/150 OT-89 KSD-T5B011-001 marking code YA Transistor TRANSISTOR MARKING CODE YA ya marking code STD361 marking code YA code Transistor ya PDF

    Untitled

    Abstract: No abstract text available
    Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VC E ( S A T =0.2V Typ. @IC /IB =3A/150mA) • Suitable for low voltage large current drivers • Switching Application Ordering Information


    Original     		STD361 A/150mA) OT-89 KST-8007-001 500mA 150mA -50mA PDF

    2SC5053

    Abstract: bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING
    Text: 2SC5053 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SC-62) package 2SC5053 (MPT3) package marking: 2SC5053; CGit, where ★ is hFE code ¿s'* 4 .5 _ o-2 .i 1.6*0.1 UÌ Pc = 2 W when mounted on a 40 x 40 x 0.7 mm ceramic substrate


    OCR Scan     		2SC5053 SC-62) 2SC5053; 2SA1900 2SC5053 bo78 2SC5053 NPN transistor bb3 marking code 43b marking CODE 43B transistor 2SA1900 T100 Transistor npn 43B MARKING PDF

    KST-8007-002

    Abstract: MARKING CODE YA TRANSISTOR marking ya STD361
    Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.


    Original     		STD361 A/150 OT-89 KST-8007-002 KST-8007-002 MARKING CODE YA TRANSISTOR marking ya STD361 PDF

    Untitled

    Abstract: No abstract text available
    Text: STN4416 N Channel Enhancement Mode MOSFET 10A DESCRIPTION STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4416 STN4416 0V/10A, PDF

    J3005

    Abstract: BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020
    Text: ö le D TELEFUNKEN ELECTRONIC • a^soQ^b o o o s m 'W BF 311 TidtifpyKlKilMl electronic T - z t - t f Creative Tech nologïes Silicon NPN Epitaxial Planar RF Transistor I Applications; Video IF amplifier stages configuration, especially in video IF power stages


    OCR Scan     		569-GS J3005 BF311 transistor BF 37 transistor marking ra marking code YA Transistor U16020 PDF

    STD361

    Abstract: Transistor marking ya
    Text: STD361 Semiconductor NPN Silicon Transistor Description • Extremely low collector-to-emitter saturation voltage VCE(SAT =0.2V Typ. @IC/IB=3A/150 ㎃) • Suitable for low voltage large current drivers • Switching Application Ordering Information Type NO.


    Original     		STD361 A/150 OT-89 KSD-T5B011-000 STD361 Transistor marking ya PDF

    stn440

    Abstract: STN4402 Stanson Technology
    Text: 02 STN44 STN440 N Channel Enhancement Mode MOSFET 12A DESCRIPTION STN4402 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4402 STN440 STN4402 0V/12A, 0V/10A, stn440 Stanson Technology PDF

    SC70-6L

    Abstract: STN6335 marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N
    Text: 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STN6335 STN6335 OT-363 SC70-6L SC70-6L marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N PDF

    P channel MOSFET 10A

    Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
    Text: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STP6308 STP6308 OT-363 SC70-6L -20V/1 -20V/0 P channel MOSFET 10A stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca marking 6l SC70-6L p channel mosfet 10a 20v PDF

    SOP8 Package

    Abstract: No abstract text available
    Text: 39 2 STN4 STN439 392 N Channel Enhancement Mode MOSFET 13A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4392 STN439 STN4392 0V/13A, 0V/10A, SOP8 Package PDF

    diode 68A

    Abstract: STN4346
    Text: 346 STN4 STN4346 N Channel Enhancement Mode MOSFET 6.8A DESCRIPTION STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4346 STN4392 STN4346 diode 68A PDF

    40V 60A MOSFET

    Abstract: STN45 STN454 STN4526 STN4546
    Text: 46 STN45 STN454 N Channel Enhancement Mode MOSFET 6.0A DESCRIPTION STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		STN4546 STN454 STN4526 0V/10 STN4546 40V 60A MOSFET STN45 STN454 PDF

    SC70-6L

    Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
    Text: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching


    Original     		STN6303 STN6303 OT-363 SC70-6L 400m-ohm 550m-ohm SC70-6L marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363 PDF

    Untitled

    Abstract: No abstract text available
    Text: UMY3N / UNZ2N / FMY3A / FMY4A / IMZ2A Transistors I General Purpose Transistor Power Management UMY3N / UMZ2N / FMY3A / FMY4A / IMZ2A •Features 1 ) Two 2SA1037AK and 2SC1412K chips are housed in a UMT or SMT package. •Absolute maximum ratings (Tas 25 £}


    OCR Scan     		2SA1037AK 2SC1412K 96-434-AC22) PDF

    Q62702-C2594

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP 53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN BCP 51M AAs Q62702-C2592 BCP 52M AEs Q62702-C2593


    OCR Scan     		SCT-595 Q62702-C2592 Q62702-C2593 Q62702-C2594 300ns, BCP53M Q62702-C2594 PDF

    marking code 8fn

    Abstract: No abstract text available
    Text: PNP Silicon High-Voltage Transistors BFN 37; BFN 39 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage Complementary types: BFN 36/38 NPN Type Marking O rdering code (12-m m tape)


    OCR Scan     		Q62702- F1304 F1305 OT-223 OT-223 marking code 8fn PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • fl23b320 GG1721S 5 H SIP PNP Silicon High-Voltage Transistors PZTA 92; PZTA 93 SIEMENS/ SP CLi SEMICONDS _ T - 3 3 -* 7 Type Marking Ordering code 12-mm tape Package* PZTA 92 PZTA 92 Q62702-Z2037 SOT-223 PZTA 93 PZTA 93 Q62702-Z2038


    OCR Scan     		fl23b320 GG1721S 12-mm Q62702-Z2037 OT-223 Q62702-Z2038 300ps; 023b32D QD17S1Ã PDF

    5b1 transistor

    Abstract: transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications 4 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package 2 1 Type


    OCR Scan     		Q62702-C2372 OT-363 Mav-12-1998 BC847S av-12-1998 5b1 transistor transistor 5b1 transistor bc qe TRANSISTOR MARKING TE SOT363 Marking 1cs sot marking 1cs FR1E marking code YA Transistor 6c2 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 32E D • Ö23b32ü 0017251 3 ■ SIP NPN Silicon Transistors SMBT 6428 SMBT 6429 17 SIEMENS/ SPCL-. SEMICONDS • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering code for


    OCR Scan     		23b32Ã QQ17Eb3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BSP 50. BSP 52 NPN Silicon Darlington Transistors 32E D • ISIP 0231=320 Q017Q73 Q SIEMENS/ SPCL ■, SEMICONDS T '3 3 - 3 - 7 • High collector current • Low collector -emitter saturation voltage • Complementary types: BSP 60.BSP 62 PNP Type Marking


    OCR Scan     		Q017Q73 12-mm Q62702-P1163 OT-223 Q62702- P1164 Q62702-P1165 BSP50 PDF

    Untitled

    Abstract: No abstract text available
    Text: • SIP 32E D ■ 023b32G QQlbö?^ PNP Silicon High-Voltage Transistors B F N 37; B F N 39 _ SIEMENS/ SPCLi SEMICONDS T - 33-/7 Suitable lor video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		023b32G 12-mm Q62702- F1304 OT-223 F1305 8FN39 fl23ti32Q PDF

    code Transistor ya

    Abstract: MARKING CODE YA TRANSISTOR
    Text: HITACHI 2SC5137-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f j - 10 GHz typ. • High gain, low noise figure PG = 16.5 dB typ., NF = 1.5 dB typ. at f = 900 MHz 1. Emitter 2. Base


    OCR Scan     		2SC5137------Silicon 2SC5137 code Transistor ya MARKING CODE YA TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 S E D m flE3 ti3 2 0 0 0 1 b ô 7 5 NPN Silicon High-Voltage Transistors I S IP BFN 36; BFN 38 _ SIEMENS/ SPCL-i SEMICONDS Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage


    OCR Scan     		12-mm Q62702 OT-223 Q62702- F1303 T-33-05 23b350 PDF