MARKING CODE W45 Search Results

marking W26 sot23

Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Contextual Info: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters

W45B010

Abstract: W45B010P W45B010Z
Contextual Info: Preliminary W45B010 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B010 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B010. The memory is accessed for

W45B010

Abstract: W45B012 W45B012P W45B012Z
Contextual Info: Preliminary W45B012 1M x 1 SERIAL FLASH MEMORY GENERAL DESCRIPTION The W45B012 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 32 sectors of 4096 Bytes for the W45B012. The memory is accessed for

W45B512

Abstract: W45B512P W45B512Z
Contextual Info: Preliminary W45B512 512K x 1 SERIAL FLASH GENERAL DESCRIPTION The W45B512 is manufactured with Winbond’s high performance CMOS WinFlash technology. The Serial Flash is organized as 16 sectors of 4096 Bytes for the W45B512. The memory is accessed for Read or Erase/Program by the SPI bus compatible serial protocol. The bus signals are: serial data

Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

MARKING CODE ZAA

Abstract: 5000 volt scr MIL-A-8625 marking W36
Contextual Info: P1ZAA POW-R-BRIK Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Phase Control Dual Diode Module 985 Amperes/Up to 5000 Volts C L (4 PLACES) G (3 PLACES) TAPPED HOLE X .50 DEEP E - (4 PLACES) (FOR TYP. 1/4-20 SOCKET HD. SCR.

marking W37

Abstract: transformer 220v 2a SMA100-300 marking W45 220V to 48V transformer transformer 220V
Contextual Info: SMA100 SERIES SURFACE MOUNT SURGE ARRESTORS FEATURES SOLID STATE SURGE ARRESTOR VOLTAGE RANGE = 200 V TO 265 V TIGHT VOLTAGE TOLERANCE FAST RESPONSE TIME VERY LOW AND STABLE LEAKAGE CURRENT REPETITIVE SURGE CAPABILITY Ipp = 100 A, 10/1000 µs FAIL-SAFE WHEN DESTROYED

marking W37

Abstract: Marking Code W45
Contextual Info: £ jJ SGS-THOMSON D glsì [llLiOT EDD(gi S M A 100 S E R IES SURFACE MOUNT SURGE ARRESTORS FEATURES • SOLID STATE SURGE ARRESTOR . VOLTAGE RANGE = 200 V TO 265 V ■ TIGHT VOLTAGE TOLERANCE ■ FAST RESPONSE TIME . VERY LOW AND STABLE LEAKAGE CURRENT ■ REPETITIVE SURGE CAPABILITY

Contextual Info: CATALOG 128_CATALOG 128.qxd 4/24/2014 10:29 AM Page 52 VectorPaktm Instrument Cases & Frame-Loc Railstm Aluminum Instrument Cases Versatile Multi-Modtm cases are ideal for small case packaging of testers, controllers and other instruments. Brushed aluminum construction provides excellent RF

Contextual Info: ELW135 ELW136 ELW4503 8 PIN DIP WIDE BODY HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

6 pin TRANSISTOR SMD CODE p

Contextual Info: ELW135 ELW136 ELW4503 8 PIN DIP WIDE BODY HIGH SPEED 1Mbit/s TRANSISTOR PHOTOCOUPLER Features • High speed 1Mbit/s • High isolation voltage between input and output Viso=5000 Vrms • Guaranteed performance from 0°C to 70°C • Wide operating temperature range of -55°C to 100°C

circuit diagram of monitor ibm e74

Abstract: w57 transistor b3 8902 w56 transistor ziatech Marking BH W36 marking w53 w58 transistor zt 8817 zt 8902
Contextual Info: ZT 8841 and ZT 88CT41 Quad Serial Interface HARDWARE MANUAL For Revision A.2 Reorder Part Number ZT M8841 May 20, 1994 1050 Southwood Drive San Luis Obispo, CA 93401 USA FAX 805 541-5088 Telephone (805) 541-0488 ZIATECH WARRANTY Warranty information for Ziatech products is available at Ziatech’s

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20911-1E FLASH MEMORY CMOS 8 M 1 M x 8/512 K × 16 BIT MBM29SL800TE/BE-90/10 • DESCRIPTION The MBM29SL800TE/BE are a 8 M-bit, 1.8 V-only Flash memory organized as 1 Mbytes of 8 bits each or 512 Kwords of 16 bits each. The MBM29SL800TE/BE are offered in a 48-ball FBGA and 45-ball SCSP packages.

WLP TCP

Contextual Info: MBM29SL800TE/BE-90/10 Data Sheet Preliminary (Retired Product) MBM29SL800TE/BE-90/10 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

w41 transistor

Abstract: TRANSISTOR D206 w64 transistor transistor w32 MARKING W63
Contextual Info: LCD Segment Drivers Multi- function LCD Segment Drivers BU97510CKV-M MAX 216 Segment 54SEGx4COM General Description Key Specifications The BU97510CKV-M is 1/4 or 1/3-Duty general-purpose LCD driver that can be used for frequency display in electronic tuners under the control of a microcontroller.

W45NM60

Abstract: STW45NM60 JESD97 650V
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

STW45NM60

Abstract: W45NM60 JESD97 w45*60
Contextual Info: STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STW45NM60 650V < 0.11Ω 45A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge

w45nm50fd

Abstract: data sheet of w45nm50fd STW45NM50FD w45nm50f W45NM50
Contextual Info: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

Contextual Info: STW45NM50 N-channel 550 V @ TJmax, 0.08 Ω, 45 A, TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

Contextual Info: STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

D239 TRANSISTOR

Abstract: transistor d358 d331 TRANSISTOR equivalent transistor d332 D333 transistor transistor d336 D417 transistor D331 transistor d427 transistor equivalent w58 transistor
Contextual Info: LCD Segment Drivers Multi-function LCD Segment Drivers BU97530KVT-M MAX 445 Segment 89segx5COM General Description Key Specifications The BU97530KVT-M is 1/5, 1/4, 1/3 or 1/1 duty general-purpose LCD driver that can be used for frequency display in electronic tuners under the

w45nm50

Abstract: 08-0D STW45NM50 STW45NM50FD
Contextual Info: STW45NM50 N-channel 550 V @ TJmax, 0.08 Ω, 45 A, TO-247 MDmesh Power MOSFET Features Type VDSS RDS on max ID STW45NM50FD 500 V < 0.1 Ω 45 A • 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge

W45NM60

Abstract: STW45NM60D w45nm60d ZVS phase-shift converters 850mj
Contextual Info: STW45NM60D N-channel 600 V, 0.09 Ω, 45 A TO-247 FDmesh Power MOSFET with fast diode Features Type VDSS (@Tjmax) RDS(on) ID STW45NM60D 650 V < 0.11 Ω 45 A • High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge