BY228ph
Abstract: BYV26E PH 1N5062 ph BY228 PH 1N4007 sod87 za109ts BYW95C PH BYR245 sj 1a0 SOD87 1N4007
Text: DISCRETE SEMICONDUCTORS Marking codes Power Diodes Supersedes data of 2004 Apr 27 2004 Jun 11 Philips Semiconductors Product specification Power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE PACKAGE TYPE NUMBER MARKING CODE PACKAGE
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1N4001G
1N4001
BY8106
OD61AD
1N4002G
1N4002
BY8108
OD61AE
1N4003G
1N4003
BY228ph
BYV26E PH
1N5062 ph
BY228 PH
1N4007 sod87
za109ts
BYW95C PH
BYR245
sj 1a0
SOD87 1N4007
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B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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Original
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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PDF
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Untitled
Abstract: No abstract text available
Text: BCE Sud Passive Components Product specification Supersedes data of 04 November 2002 2003 April 18 BCE Sud Passive Components A former part of Philips Components BCE Sud Passive Components 2003 April 18 BCE Sud Passive Components The temperature coefficient is indicated by a marking code
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V170R
Abstract: SO7K40 so7k SO7K250 sanken snr ERZC07DK330 varistor 420 s 14k sanken varistor SNR varistor 7k 270 ZOV Varistor
Text: VARISTORS /> S C 32 i< !K <o Style Designation: (typical Standard Marking: R6921ZOV511RA110 Where: RCoating identification, R means standard flame-retardant fluid bed epoxy. 69 Size code, 2 numbers. See Dimensions Table. 21 Lead Configuration code, 1 or 2 numbers used only for non
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R6921ZOV511RA110
4K221
S20K140
ERZC20OK361
ERZC20DK391
S20K230
S20K250
ERZC20DK471
S20K300
V480LA
V170R
SO7K40
so7k
SO7K250
sanken snr
ERZC07DK330
varistor 420 s 14k
sanken varistor SNR
varistor 7k 270
ZOV Varistor
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 146W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri=47k£2, R2=22k£2 FL U TT Pin Configuration Ordering Code WLs UPON INQUIRY Package UJ II CM Marking BCR 146W
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OCR Scan
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OT-323
0535b05
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PDF
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SOT23 KJA
Abstract: No abstract text available
Text: SIEMENS BCR 135 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=2.2kiî, R2=47kft Marking Ordering Code Pin Configuration BCR 135 WJs 1 =B Package UJ II CNJ Q62702-C2257 CO II O Type
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OCR Scan
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47kft)
Q62702-C2257
OT-23
Resistan200
SOT23 KJA
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 196 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=47k£2, R2=22kfl Marking Ordering Code Pin Configuration BCR 196 WXs 1 =B Package UJ II <M UPON INQUIRY o II CO Type
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OCR Scan
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22kfl)
OT-23
6235bQS
D1B0634
a23St
0120B35
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package
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OCR Scan
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Q62702-A3473
SCT-595
300ns;
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN Silicon Switching Transistors • • • BSS 79 BSS 81 High DC current gain Low collector-emitter saturation voltage Complementary types: B S S 80, B S S 82 PNP Type BSS BSS BSS BSS 79 79 81 81 B C B C Marking Ordering code for versions in bulk Ordering code for
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OCR Scan
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Q62702-S403
Q62702-S402
Q62702-S420
Q62702-S419
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S559
BSS79
BSS81
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PDF
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bft93
Abstract: transistor BF 199
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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OCR Scan
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BFT93
BFT93
Q62702-F1063
OT-23
900MHz
transistor BF 199
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PDF
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BC 170 transistor
Abstract: No abstract text available
Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration
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OCR Scan
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17-16W
BC807W,
BC808W
OT-323
Q62702-C2321
18-16W
Q62702-Ã
18-25W
Q62702-C2323
18-40W
BC 170 transistor
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PDF
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BF 182 transistor
Abstract: transistor 182 marking code M21
Text: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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OCR Scan
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900MHz
OT-143
Q62702-F1396
BF 182 transistor
transistor 182
marking code M21
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PDF
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7826 Transistor
Abstract: marking code Sk transistors
Text: 2SD2114K Transistor, NPN Features dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD2114K; BB-*, where ★ is hFE code • high DC current amplification, typically hFE = 1200 • high emitter-base voltage, VEBO = 12V(min)
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OCR Scan
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2SD2114K
SC-59)
2SD2114K;
2SD2114K
7826 Transistor
marking code Sk transistors
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PDF
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bo 947
Abstract: BDP947C dp947
Text: SIEMENS BDP947 NPN Silicon AF Power Transistors • For AF drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 947 BDP 947 Q62702-D1335 1= B
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OCR Scan
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BDP948,
BDP950
BDP947
Q62702-D1335
Q62702-D1337
OT-223
OT-223
300ns;
bo 947
BDP947C
dp947
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PDF
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AX057
Abstract: marking code 9d D1NL4 DATE CODE FOR NITM MU diode MARKING CODE l4 marking code diode
Text: Super Fast Recovery Diode Axial Diode Wtm D1 NL40 OUTLINE U nit-m m Package : AX057 W eight 0.19g Typ 400V 0.9A UJ Feature •ms'ix • Low Noise • trr= 5 0 n s • trr=50ns 02.6 -M - 0> Main Use • Switching Regulator • ÍM .0AJM 3 Marking Spec Code
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OCR Scan
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AX057
AX057
marking code 9d
D1NL4
DATE CODE FOR NITM
MU diode MARKING CODE
l4 marking code diode
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 191 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit »Built in bias resistor R1=22kiî, Rg=22ki2 Type Marking Ordering Code Pin Configuration BCR 191 WOs 1=B Q62702-C2264 Package 2=E 3=C SOT-23
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OCR Scan
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22ki2)
Q62702-C2264
OT-23
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PDF
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transistor d2118
Abstract: No abstract text available
Text: 2SD2118F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D2118*Q , where ★ is hFE code and □ is lot number • excellent current-to-gain characteristics • 2SD2118F5 (CPT F5) 6.5 ± 0.2 2.3
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OCR Scan
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2SD2118F5
SC-63)
D2118
transistor d2118
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PDF
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KC-79-35
Abstract: No abstract text available
Text: DASH NO. M CODE MADE FROM NOTES: 1. SAME AS UG-1094/U EXCEPT FOR FINISH & MARKING. 2. MATERIALS: INSULATOR: TEFLON, ASTM-D-4894 LOCKWASHER: PHOSPHOR BRONZE. ASTM-B103 CENTER CONTACT: BER. COPPER, ASTM-B-196 ALL OTHER METAL PARTS: BRASS, ASTM-B16 3. FINISHES:
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OCR Scan
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UG-1094/U
ASTM-D-4894
ASTM-B103
ASTM-B-196
ASTM-B16
ASTM-G-45204
WJM0228
KC-79-35
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F= 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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OCR Scan
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BFP183W
Q62702-F1503
OT-343
fiE35bQ5
900MHz
c15mA
fl535b05
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PDF
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131 Transistor
Abstract: TRANSISTOR 2SC 2SC4649 2SC2059K 2SC4099 SC-75 T106 T146 transistor 3bt marking 1F SMT3
Text: 2SC2059K 2SC4099 2SC4649 Transistor, NPN Features • available In SMT3 SMT, SC-59 , UMT3 (UMT, SC-70), and EMT3 (EMT, SC-75) packages • package marking: 2SC2059K, 2SC4099,2SC4649; J-*, where ★ is hFE code • high transition frequency, typically fT = 500 MHz at 1 mA
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OCR Scan
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2SC2059K
2SC4099
2SC4649
SC-59)
SC-70)
SC-75)
2SC2059K,
2SC4099
2SC4649;
131 Transistor
TRANSISTOR 2SC
2SC4649
2SC2059K
SC-75
T106
T146
transistor 3bt
marking 1F SMT3
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PDF
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K 4005 transistor
Abstract: ic MARKING FZ 2SC4505 T100 T200 2SC4505CE
Text: 2SC4505 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT3, SOT-89, SC-62) package • package marking: 2SC4505; CE-*, where ★ is hFE code • high voltage BVCEO = 400 V • low collector saturation voltage, typically VCE(sat) = 0.05 V for
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OCR Scan
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2SC4505
OT-89,
SC-62)
2SC4505;
00147flb
K 4005 transistor
ic MARKING FZ
2SC4505
T100
T200
2SC4505CE
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS BDP 952 PNP Silicon AF Power Transistor • For A F drivers and output stages • High collector current • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration BDP 952 BDP 952 Q62702-D1340 1 =B
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OCR Scan
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Q62702-D1340
BDP951.
BDP955
Q62702-D1342
Q62702-D1344
OT-223
S3Sb05
D121040
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PDF
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2SA amplifier
Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP
Text: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K
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OCR Scan
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2SA1514K
2SA1579
SC-59)
SC-70)
2SA1579;
-120V
2SC3906K
2SC4102
2SA1514K
2SA amplifier
H1000I
2SA1579
2SC4102
transistor 2SA
transistor PNP
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PDF
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