smd marking g12
Abstract: smd marking g24
Text: SMD TVS Arrays Multiple Terminals Part No. Marking Code SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) Peak Max Power Min. Dissssipa- Reverse Breakdown Stand-Off tion @ Voltage Voltage 8x20µs Peak Pulse Current Off-State Capacitance Pinout Package
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TVG12RVAWT
TVG03VAWS
TVG05VAWS
TVG12VAWS
TVG15VAWS
TVG24VAWS
TVG36VAWS
TVG12RVAWS
TVG24RVAWS
TVT12LCW
smd marking g12
smd marking g24
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Untitled
Abstract: No abstract text available
Text: PJSD05 SERIES 400W LOW CLAMPING VOLTAGE SINGLE TVS FOR PROTECTION This TVS/Zener Series has been designed to Protect Sensitive Equipment against ESD and to prevent Latch-Up events in very sensitive CMOS circuitry operating at 5V, 12V, 15V and 24Vdc .These devices come in an industry standard SOD123
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PJSD05
24Vdc
OD123
IEC61000-4-2
OD123
2011/65/EU
IEC61249
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16F685
Abstract: PIC16F687 PIC16F690 PWM c programming
Text: PIC16F685/687/689/690 PIC16F685/687/689/690 Rev. A Silicon/Data Sheet Errata The PIC16F685/687/689/690 parts you have received conform functionally to the Device Data Sheet DS41262A , except for the anomalies described below. 1.4 After the auto-baud Sync character has been
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PIC16F685/687/689/690
PIC16F685/687/689/690
DS41262A)
PIC16F687/689/690
DS80243C-page
16F685
PIC16F687
PIC16F690 PWM c programming
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PIC16C774
Abstract: transistor D400 transistor D400 pin diagram transistor equivalents for d407 D005 D040 D420 PIC16C77X
Text: PIC16C774 PIC16C774 Rev. B Silicon Errata Sheet The PIC16C774 Rev. B parts you have received conform functionally to the Device Data Sheet (DS30275A), except for the anomalies described below. 2. Module: PORTE The minimum VIH specification for PORTE (parameter D040) is 2.2 volts. The maximum VIL
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PIC16C774
PIC16C774
DS30275A)
D030A)
DS80062D-page
transistor D400
transistor D400 pin diagram
transistor equivalents for d407
D005
D040
D420
PIC16C77X
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PIC16C773
Abstract: D400 transistor transistor D400 circuit diagram application DS30275A marking code jw analog transistor D400 D005 D420 PIC16C77X PIC16LC773
Text: PIC16C773 PIC16C773 Rev. B Silicon Errata Sheet The PIC16C773 Rev. B parts you have received conform functionally to the Device Data Sheet (DS30275A), except for the anomalies described below. 2. Module: BOR The Brown-Out Reset module’s selection ranges
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PIC16C773
PIC16C773
DS30275A)
DS80061C-page
D400 transistor
transistor D400 circuit diagram application
DS30275A
marking code jw analog
transistor D400
D005
D420
PIC16C77X
PIC16LC773
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frequency counter using PIC16F73
Abstract: microchip pic16f73 interrupt example in C PIC16F73 pin diagram PIC16F73 pic16f74 application note cpu crystal oscillator module ttl pic16f74 marking code ra5 capacitor PIC16F76 PIC16F7X
Text: PIC16F73/74/76/77 PIC16F73/74/76/77 Rev. B1 Silicon/Data Sheet Errata The PIC16F73/74/76/77 Rev. B1 parts you have received conform functionally to the Device Data Sheet DS30325B , except for the anomalies described below. All the problems listed here will be addressed in future
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PIC16F73/74/76/77
PIC16F73/74/76/77
DS30325B)
DK-2750
D-85737
NL-5152
frequency counter using PIC16F73
microchip pic16f73 interrupt example in C
PIC16F73 pin diagram
PIC16F73
pic16f74 application note
cpu crystal oscillator module ttl
pic16f74
marking code ra5 capacitor
PIC16F76
PIC16F7X
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sandisk 32GB Nand flash
Abstract: sDED7-256M-N9Y sded7-256m-n9 X-GOLD 223 infineon x-gold MD2534-D2G-X-P SDED5-001G-NA sandisk mDOC H3 SanDisk SDED7-256M-N9 MD2534-D1G-X-P
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, November 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
sDED7-256M-N9Y
sded7-256m-n9
X-GOLD 223
infineon x-gold
MD2534-D2G-X-P
SDED5-001G-NA
sandisk mDOC H3
SanDisk SDED7-256M-N9
MD2534-D1G-X-P
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Untitled
Abstract: No abstract text available
Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used in Portable Consumer,Computing
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PJSLC05
IEC61000-4-2
IEC61000-4-5
OT-23,
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sandisk 32GB Nand flash
Abstract: SDED7-256M-N9 SDED7-256M-N9Y MD2534-D1G-X-P SDED5-512M-N9T SDED7-256M-N9T SDED5-002G-NC sded5-004g-ncy SanDisk SDED7-256M-N9 MD2534-D2G-X-P
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2008 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk’s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
SDED7-256M-N9
SDED7-256M-N9Y
MD2534-D1G-X-P
SDED5-512M-N9T
SDED7-256M-N9T
SDED5-002G-NC
sded5-004g-ncy
SanDisk SDED7-256M-N9
MD2534-D2G-X-P
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sandisk 32GB Nand flash
Abstract: SDED7-256M-N9 MD2533-D8G-X-P X-GOLD 110 NAND flash 64gb md2533-d16g-x-p MD2534-D1G-X-P sded5-004g-ncy mdoc h3 SDED5-002G
Text: mDOC H3 Embedded Flash Drive EFD featuring Embedded TrueFFS Flash Management Software Data Sheet, May 2007 HIGHLIGHTS mDOC H3 is an Embedded Flash Drive (EFD) designed for mobile handsets and consumer electronics devices. mDOC H3 is the new generation of SanDisk‟s successful mDOC
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92-DS-1205-10
sandisk 32GB Nand flash
SDED7-256M-N9
MD2533-D8G-X-P
X-GOLD 110
NAND flash 64gb
md2533-d16g-x-p
MD2534-D1G-X-P
sded5-004g-ncy
mdoc h3
SDED5-002G
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SMD T6s
Abstract: SMD code T6s
Text: SMD TVS Arrays Two Terminals SMD TVS PPPM(W) VRWM(V) VBR(V) Max. Clamping Voltage @ IPPM 8x20µs VC(V) P 5 T 6 50 50 50 50 3.3 5 3.3 5 4.2 5.8 4.2 5.8 - - 25 15(Typ. ) Uni Uni Bi Bi TVD03WU TVD05WU TVD08WU TVD12WU TVD15WU TVD24WU TVD36WU GS GT GU GV GW GX
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TVD03WU
TVD05WU
TVD08WU
TVD12WU
TVD15WU
TVD24WU
TVD36WU
TVD03WT
TVD05WT
TVD08WT
SMD T6s
SMD code T6s
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t1s sot23
Abstract: PJSLC05 PJSLC12 PJSLC15 PJSLC24
Text: PJSLC05 SERIES ULTRA LOW CAPACITANCE SINGLE TVS FOR HIGH SPEED DATA LINES 3 This Transient Voltage Suppressor is intended to Protect Sensitive Equipment against Electrostatic Discharge and Transient Events as well to offer a Miminum insertion loss in high speed data communication transmission line ports used
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PJSLC05
IEC61000-4-2
IEC61000-4-5
PJSLC05
t1s sot23
PJSLC12
PJSLC15
PJSLC24
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marking code ra5 capacitor
Abstract: hms81c1716b
Text: MAGNACHIP SEMICONDUCTOR LTD. 8-BIT SINGLE-CHIP MICROCONTROLLERS HMS81C1808B/16B HMS81C1708B/16B HMS81C1608B/16B HMS81C1508B/16B HMS81C1404B/08B/16B User’s Manual Ver. 1.02 REVISION HISTORY VERSION 1.02 (SEP. 2004) This book The company name, Hynix Semiconductor Inc. changed to MagnaChip Semiconductor Ltd.
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HMS81C1808B/16B
HMS81C1708B/16B
HMS81C1608B/16B
HMS81C1508B/16B
HMS81C1404B/08B/16B
C000H
HMS81C1816B-HNxxx
marking code ra5 capacitor
hms81c1716b
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Mpsa42
Abstract: mpsa 102
Text: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation
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Q68000-A413
Q68000-A4809
42/4J
235b05
Mpsa42
mpsa 102
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8065S
Abstract: No abstract text available
Text: SIPMOS Small-Signal Transistor • • • • • • • BSS 149 Vx 200 V /D 0.35 A ^DS on 3-5 N channel Depletion mode High dynamic resistance Available grouped in Vqs^ Type Ordering Code BSS 149 Q67000-S252 Tape and Reel information Pin Gonfigu ration Marking Package
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OCR Scan
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E6325:
SS149
Q67000-S252
8065S
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Untitled
Abstract: No abstract text available
Text: BF994S PHILIPS INTERNATIONAL SbE D 711002b 003407b T1S IPHIN FOR D ETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR D ATASHEET T-?«r-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and
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BF994S
711002b
003407b
OT143
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BF994S marking code
Abstract: BF994S MOSFET Tetrode
Text: J PHILIPS INTERNATIONAL SbE D BF994S 711002t. 0 0 3 4 0 7 b T1S • PHIN FOR D E T A IL E D IN FO R M A TIO N SEE THE LATEST ISSUE OF HANDBO OK SC07 OR D ATASHEET T -? jr-z7 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in aplasticSOT143 m icrom iniature envelope w ith source and
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BF994S
711002b
00341117b
OT143
BF994S marking code
BF994S
MOSFET Tetrode
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PDF
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lot date code panasonic
Abstract: lh 3a05 ELL8UV221M 260-D
Text: DIGI KEY Issued Date No. 23/08/2005 T11S-05017 REVISION INFORMATION LETTER FO R PROD U CT SPECIFICATION FO R INFORMATION Part Name CHIP CHOKE COIL ELL8UV00DD Part No. Our Part No. S ^ T n n il [ ELL8UVDDD0 ] Used Model or Spec.No ís M J S l T1S-05013A Reasons for
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OCR Scan
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T11S-05017
ELL8UV00QD
T1S-05013A
220uH.
ELL8UV330M
ELL8UV221M.
100mm
400mm
151-ELL8-023
lot date code panasonic
lh 3a05
ELL8UV221M
260-D
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diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
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160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
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PDF
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110B4
Abstract: No abstract text available
Text: RESIN COATED DG SERIES DG SERIES Low impedance DIMENSIONS [mm] PART NUMBER SYSTEM DG 105 M A - Lead form Capacitance tolerance M: ±20% K : ±10% Capacitance (pF) First tw o digits represent significant figures. T h ird d ig it specifies number o f zeros to
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t457S2S
b457525
110B4
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REF-02ARC
Abstract: 5962R8551401VHA REF02AJ8 F02A REF-02A CDFP2-F10 CQCC1-N20 GDFP1-F10 REF02 REF02A
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Change to military drawing format. Changes to output adjustment range. Add conditions tor load regulation test at -5!?C and +125°C. Change group A subgroups for load regulation and line regulation tests, and output voltage
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1ES66.
TDD470fl
1ES66
iOG47GÃ
REF-02ARC
5962R8551401VHA
REF02AJ8
F02A
REF-02A
CDFP2-F10
CQCC1-N20
GDFP1-F10
REF02
REF02A
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Untitled
Abstract: No abstract text available
Text: 0 0 2 4 ^ 1T3 « A P X N AMER PHILIPS/DISCRETE BCX54 BCX55 BCX56 L7E D ; v SILICON PLANAR EPITAXIAL TRANSISTORS Medium power n-p-n transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages
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BCX54
BCX55
BCX56
BCX51,
BCX52
BCX53
LibS3T31
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MD80C31BH
Abstract: 5962-8506401MQA MD80C31 MR80C31BH MD80C31B 5962-8506403MQA 5962-8506401MYA 5962-8506401MXA MR80C31 CC-416
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED Add device types 03 and 04. Add test circuit. Editorial changes thougout. 90-03-05 W. Heckman Change 1.3. Convert to one part-one part number format. 91-02-08 W. Heckman Changes in accordance with NOR 5962-R323-92
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5962-R323-92
5962-R052-93
MD80C31BH
5962-8506401MQA
MD80C31
MR80C31BH
MD80C31B
5962-8506403MQA
5962-8506401MYA
5962-8506401MXA
MR80C31
CC-416
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Untitled
Abstract: No abstract text available
Text: SIEMENS Schnelle GaAIAs-IR-Lumineszenzdiode High-Speed GaAIAs Infrared Emitter SFH 4391 Vorläufige Daten / Preliminary Data Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Hohe Pulsleistung sowie hoher Gesamtstrah
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