Part Marking Information
Abstract: marking xa XA MARKING CODE VISHAY MARKING SM D61-8-SM VISHAY LOT CODE MARKING
Text: Part Marking Information www.vishay.com Vishay Semiconductors D-61-8, D-61-8-SM, D-61-8-SL D-61-8 Part number Example: This is a xxxxxxxxxA with assembly lot code AA, assembled on WW 45, 2010 in the assembly line “XA” Example: This is a xxxxxxxxxASM with
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D-61-8,
D-61-8-SM,
D-61-8-SL
D-61-8
P045XA
D-61-8-SM
Part Marking Information
marking xa
XA MARKING CODE
VISHAY MARKING SM
D61-8-SM
VISHAY LOT CODE MARKING
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Untitled
Abstract: No abstract text available
Text: BSS 100 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode • Logic Level • ^G S th = 0.8.2.0V Type ^DS !d f î DS(on) Package Marking BSS 100 100 V 0.22 A 6Q TO-92 SS 100 Type BSS 100 BSS 100 BSS 100 Ordering Code Q62702-S499
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Q62702-S499
Q62702-S007
Q62702-S206
E6288
E6296
E6325
BSS100
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSS 124 S IP M O S Sm all-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Pin 1 Pin 2 D G Type ^DS BSS 124 400 V Type BSS 124 Ordering Code Q67000-S172 0.12 A Pin 3 f f DS(on) Package Marking 28 £1 TO-92 SS 124 S Tape and Reel Information
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Q67000-S172
E6288
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ERA38
Abstract: irsy
Text: E R A 38 o.5A Outline Drawings FAST RECOVERY DIODE : Features • iti-a u : Marking S u p e r high speed sw itch in g • f f i ' J 5 m m l i 7 f £ » « ¡A U ltra sm all p a c k a g e . * 7 —□ — K : Ö C o lo r code : W hite Possible fo r 5 m m pitch a u to m a tic insertion
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ERA38
irsy
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bu 3 GDG 125
Abstract: marking CODE smb J36 diode 13.8 8w zener diode DO-214A sma marking sm RG DO-214AA smj58 24 DO-214A bu 450 GDF diode gde 61 81g diode
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C398BB02
C398BB03
bu 3 GDG 125
marking CODE smb J36 diode
13.8 8w zener diode
DO-214A sma
marking sm RG DO-214AA
smj58
24 DO-214A
bu 450 GDF
diode gde 61
81g diode
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marking code SM diode
Abstract: GGV diode GGT DIODE marking SM 98 tvs diode sma nu GHM 25 DIODE GHM DIODE ph 41 zener diode ggr 86 176/Diode Zener C 47 pH
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
marking code SM diode
GGV diode
GGT DIODE
marking SM 98
tvs diode sma nu
GHM 25 DIODE
GHM DIODE
ph 41 zener diode
ggr 86
176/Diode Zener C 47 pH
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ph 41 zener diode
Abstract: J150A 13.8 8w zener diode GHM DIODE marking code SM diode Diode GHM GGR diode sg 82 do-214aB marking ghm J78A
Text: SURFACE MOUNT TVS & Zener Diodes TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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DO-214AC
C3B05
ph 41 zener diode
J150A
13.8 8w zener diode
GHM DIODE
marking code SM diode
Diode GHM
GGR diode
sg 82 do-214aB
marking ghm
J78A
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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bu 450 GDF
Abstract: SMA marking code LG sma marking code kn marking sm DO-214AA lg73 J15A marking sm marking SM 98 sma MARKING mp BQ 714
Text: SURFACE MOUNT Transient Voltage Suppressor TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Outline Part Peak Voltage Clamping Current & Leakage Dimensions in mm Number Reverse VBR @ IT Voltage
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C3B04
bu 450 GDF
SMA marking code LG
sma marking code kn
marking sm DO-214AA
lg73
J15A
marking sm
marking SM 98
sma MARKING mp
BQ 714
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SC-70 EQ
Abstract: No abstract text available
Text: What H E W L E T T * mLliM PACKARD Surface Mount PIN Diodes in SOT-323 SC-70 Technical Data HSMP-381A Series HSMP-386A Series HSMP-389A Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching
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OT-323
SC-70)
HSMP-381A
HSMP-386A
HSMP-389A
SC-70
RS-481,
SC-70 EQ
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diode MARKING CODE A9
Abstract: 02CZ6 02CZ2 s32 schottky diode SS322 46/SMC 5/L4F1 DIODE List of Marking
Text: 4. List of Principal Characteristics of Diodes 4. List o f Principal C h a r a c t e r istic s o f D io d e s * S c h o ttk y b a r r i e r diode. 59 4. List of Principal Characteristics o f Diodes U nit : mm u se S-M IN I U SM SS M 1 1 125*8:i s 5 H- pl *il"
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160-i
f-1SS349--
SS181
SS184
SS187
SS190
1SS307
SS193
HN2D01P
HN1D01F
diode MARKING CODE A9
02CZ6
02CZ2
s32 schottky diode
SS322
46/SMC 5/L4F1 DIODE
List of Marking
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STM date code TO-220
Abstract: No abstract text available
Text: SM15T6V8A/220A SM15T6V8CA/220CA TRANS IL FEATURES • PEAK PULSE POWER: 1500 W 10/1000|is ■ BREAKDOWN VOLTAGE RANGE : From 6.8 V to 220 V ■ UNI AND BIDIRECTIONAL TYPES ■ LOW CLAMPING FACTOR ■ FAST RESPONSETIME ■ UL RECOGNIZED DESCRIPTION Transil diodes provide high overvoltage protection
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SM15T6V8A/220A
SM15T6V8CA/220CA
STM date code TO-220
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RX-2C G
Abstract: marking code rie sot23 em 2860 k2915 MARKING JW SOT-23
Text: What H E W LET T 1"KM PA C K A R D Surface Mount Microwave Schottky Detector Diodes Technical Data HSMS-2850 Series HSMS-2860 Series F eatures • S urface M ount SOT-23/ SOT-143 P ackage • High D e te c tio n S en sitivity: Description HSMS-2860 Package Lead Code
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HSMS-2850
HSMS-2860
OT-23/
OT-143
OT-23
5966-0928E,
RX-2C G
marking code rie sot23
em 2860
k2915
MARKING JW SOT-23
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SM150 01 diode
Abstract: No abstract text available
Text: Formosa MS MELF Schottky Barrier Diodes SM120 THRU SM160 Silicon epitaxial planer type MELF Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications.
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SM120
SM160
MIL-S-19500
MIL-STD-750,
015gram
300us
SM150 01 diode
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SM150 01 diode
Abstract: SM150 diode melf diode marking SM150 marking code SM diode SM-1 SM120 SM130 SM140 SM160
Text: Formosa MS MELF Schottky Barrier Diodes SM120 THRU SM160 Silicon epitaxial planer type Features SM-1 Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications.
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SM120
SM160
MIL-S-19500
MIL-STD-750,
300us
SM150 01 diode
SM150 diode
melf diode marking
SM150
marking code SM diode
SM-1
SM130
SM140
SM160
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jrw sot
Abstract: marking code JRW MARKING tAN SOT-23 diode P3810 sot-23 marking code sf MARKING tAN SOT-23 ic ma 4810 HSMP-38XX hsms-3860
Text: What H EW L E T T * mLliM P A C K A R D Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodes Optimized for: Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation
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HSMP-38XX
HSMP-48XX
OT-23
OT-143
HSMP-4810
RS-481,
jrw sot
marking code JRW
MARKING tAN SOT-23 diode
P3810
sot-23 marking code sf
MARKING tAN SOT-23
ic ma 4810
hsms-3860
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2FL20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single D iode OUTLINE Package : 2F m tm D2FL20U U n it- m m W e ig h t 0 .1 6 g T y p io y - F - e - ? / C athode m a rk 200V 1.5A 'Iggsl Feature • /Jv P S M D • Sm all SM D • f îy - f X ' • Low Noise • trr=35ns • trr=35ns
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D2FL20U
2FL20U
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schottky diode sod-123 marking code 12
Abstract: diode sod-123 marking code 26 marking code sm SOD 123 marking SM 1N6263W marking code SM diode
Text: 1N6263W SURFACE MOUNT SCHOTTKY BARRIER DIODE PINNING Features: ․ Low Forward Voltage Drop PIN ․ Guard Ring Construction for Transient Protection DESCRIPTION 1 Cathode 2 Anode ․ Fast Switching Time ․ Low Reverse Capacitance ․ Surface Mount Package Ideally Suited for Automatic
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1N6263W
OD-123
OD-123,
MIL-STD-202,
OD-123
schottky diode sod-123 marking code 12
diode sod-123 marking code 26
marking code sm
SOD 123 marking SM
1N6263W
marking code SM diode
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smd diode marking code SM
Abstract: Diode smd code sm 14
Text: PhilipsSem icom iuctors Preliminary specification Schottky barrier diode FEATURES 1PS76SB17 DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a SOD323 very sm all plastic • Low diode capacitance Package. • ESD > 500 V; Human body model
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1PS76SB17
OD323
OD323)
MLC797
smd diode marking code SM
Diode smd code sm 14
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diode 6v8a
Abstract: Diode marking MFW 6v8a diode 001 6V8A 029 6v8a on 6v8a 6V8A DIODE 001 6V8A 950 6V8A marking code MFW
Text: SM15T6V8,A/220,A SM15T6V8C,CA/220C,CA TRANSILTM FEATURES PEAK PULSE POWER= 1500 W @ 1ms BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED SOD 15 Plastic DESCRIPTION Transil diodes provide high overvoltage protection by clamping action. Their instantaneous reponse to transients makes them particularly
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SM15T6V8
SM15T6V8C
CA/220C
diode 6v8a
Diode marking MFW
6v8a
diode 001 6V8A
029 6v8a
on 6v8a
6V8A DIODE
001 6V8A
950 6V8A
marking code MFW
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TVR1B
Abstract: toshiba diode "do-41"
Text: SILICON DIFFUSED TYPE FAST RECOVERY DIODE - O • • • TVR1B/G/J TV APPLICATIONS. FAST RECOVERY U n it in mm Average Forward Current : I f (AV) =0.5A (Ta = 65°C) Repetitive Peak Reverse Voltage : Vr r m = 100V~600V Reverse Recovery Time : tr r =2.0^s
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DO-41
100mA,
100mA
TVR1B
toshiba diode "do-41"
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MARKING M12 SOT23
Abstract: M24 sot23 DIODE MARKING code SM05 DIODE MARKING code M05 sm05 semtech sm12 marking code m05 sot23 6
Text: SM05 through SM36 TVS Diode Array PROTECTION PRODUCTS Description Features The SM series of transient voltage suppressors TVS are designed to protect components which are connected to data and transmission lines from voltage surges caused by electrostatic discharge (ESD),
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MOTS2
Abstract: No abstract text available
Text: SMDA05 THRU SMDA24 SERIES SURFACE MOUNT DIODE ARRAY TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 to 24.0 Volts 300 Watt Peak Pulse Power FEATURES ♦ Plastic package has Underwriters Laboratory Flammabitity Classification 94V-0 MS-012A A ♦ Glass passivated junctions in
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SMDA05
SMDA24
MS-012A
0/20ns
3flT0137
00G5b42
0Q05b43
MOTS2
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by M1MA151KT1/D SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the S C -5 9 package which is
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M1MA151KT1/D
M1MA151KT1
M1MA152KT1
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
SC-59
318D-03
SC-59
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