MARKING CODE R7 RF TRANSISTOR
Abstract: transistor B 764 NPN transistor marking W4s marking transistor RF
Text: SIEMENS BCR 400W Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FETs from
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200mA
Q62702-C2481
OT-343
BCR400
MARKING CODE R7 RF TRANSISTOR
transistor B 764
NPN transistor
marking W4s
marking transistor RF
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IEC-134
Abstract: IEC134 transistor t4B MARKING CODE R7 RF TRANSISTOR LAE6000Q T4B marking
Text: 7^ 3 / " / ^ LAE6000Q M AINTENANC E TYPE PHILIPS INTERNATIONAL 5bE J> 711Qfi5t, D04blflQ OOT IPHIN LOW-NOISE MICROWAVE TRANSISTOR NPN transistor fo r common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optim um temperature profile,
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LAE6000Q
711005b
004blfl0
IEC134)
IEC-134
IEC134
transistor t4B
MARKING CODE R7 RF TRANSISTOR
LAE6000Q
T4B marking
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sot marking code ZS
Abstract: Transistor BFR MARKING CODE R7 RF TRANSISTOR sot-23 npn marking code VD BFR106 Transistor BFR 30 sot-23 M
Text: NPN Silicon RF Transistor BFR 106 • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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OT-23
sot marking code ZS
Transistor BFR
MARKING CODE R7 RF TRANSISTOR
sot-23 npn marking code VD
BFR106
Transistor BFR 30
sot-23 M
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MARKING CODE R7 RF TRANSISTOR
Abstract: No abstract text available
Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor 3 • Provides outstanding performance for 1 a wide range of wireless applications up to 10 GHz and more 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz
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BFR740L3
MARKING CODE R7 RF TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 35E D Bi Ö23tj320 001703b 5 WkSIP. NPN Silicon RF Transistor oj _ SIEMENS/ SPCL-, SEMICONDS _/a B F R 106 _ _ • For low-noise, high-gain amplifiers • For linear broadband amplifiers • Special application: antenna amplifiers C ESD: Electrostatic discharge sensitive device, observe handling precautions!
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23tj320
001703b
-F1219
OT-23
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Ceramic RF Power and HV Capacitors
Abstract: dwa 108 a kvp 42 DIODE KT 0803 K kvar schematic kvp 03 diode kvp 34 DIODE KVP 79 A dwa 108 Optoelectronics Device data
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book CERAMIC RF POWER AND HV CAPACITORS vishay DRALORIC vsD-db0048-0210 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vsD-db0048-0210
Ceramic RF Power and HV Capacitors
dwa 108 a
kvp 42 DIODE
KT 0803 K
kvar schematic
kvp 03 diode
kvp 34 DIODE
KVP 79 A
dwa 108
Optoelectronics Device data
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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BFR740L3
Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ MARKING CODE R7 RF TRANSISTOR germanium transistors NPN
Text: BFR740L3 NPN Silicon Germanium RF Transistor • High gain ultra low noise RF transistor • Provides outstanding performance for 3 1 a wide range of wireless applications 2 up to 10 GHz and more • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz
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BFR740L3
BFR740L3
RF NPN POWER TRANSISTOR C 10-12 GHZ
MARKING CODE R7 RF TRANSISTOR
germanium transistors NPN
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
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Mixers
Abstract: PE4140
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
Mixers
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617DB-1024
Abstract: PE4140G-06DFN balun diode mixer ETC1,6-4-2-3 ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK 4239 mosfet
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
617DB-1024
PE4140G-06DFN
balun diode mixer
ETC1,6-4-2-3
ETC1-1-13
PE4140-06DFN
PE4140-EK
4239 mosfet
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13N50
Abstract: 8140115 nxp marking code M2
Text: BLF6G15L-250PBRN Power LDMOS transistor Rev. 1 — 14 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
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BLF6G15L-250PBRN
13N50
8140115
nxp marking code M2
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617DB-1024
Abstract: ETC1-1-13 PE4140 PE4140-06DFN PE4140-EK PE4140G-06DFN
Text: Product Specification PE4140 Ultra-High Linearity UltraCMOS Broadband Quad MOSFET Array Product Description Features The PE4140 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable of operation beyond 6.0 GHz. This quad array operates with
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PE4140
PE4140
617DB-1024
ETC1-1-13
PE4140-06DFN
PE4140-EK
PE4140G-06DFN
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
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marking code 8 lead msop package analog devices
Abstract: marking code 10 lead msop package analog devices Analog devices marking Information MSOP Analog 8 msop devices marking pe4141 marking code 8 lead msop package
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
marking code 8 lead msop package analog devices
marking code 10 lead msop package analog devices
Analog devices marking Information MSOP
Analog 8 msop devices marking
marking code 8 lead msop package
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Untitled
Abstract: No abstract text available
Text: Technical Data MMM5062/D Rev. 3, 9/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
GSM850/900
DCS1800
PCS1900
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DP358
Abstract: AP358 BI-QUAD RC Active Bandpass Filter AP358S Operational Amplifiers cross reference marking R4 ap358 pin diagram R/Detector/"Detector IC"/"CD"/DP358
Text: AP358 LOW POWER DUAL OPERATIONAL AMPLIFIERS Features • • • • • • • • • • General Description Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Very low supply current drain 500µA -essentially independent of supply voltage
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AP358
AP358
DS30738
DP358
BI-QUAD RC Active Bandpass Filter
AP358S
Operational Amplifiers cross reference
marking R4
ap358 pin diagram
R/Detector/"Detector IC"/"CD"/DP358
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PE4141
Abstract: No abstract text available
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance
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PE4141
PE4141
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Marking C4 SOT23-5
Abstract: D06A marking code ce SOT23 MARKING CODE R7 DIODE LM3460 MA05B SHUNT REGULATOR marking "7A" MARKING CODE R7 RF TRANSISTOR
Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.
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LM3460-1
LM3460
OT23-5
Marking C4 SOT23-5
D06A
marking code ce SOT23
MARKING CODE R7 DIODE
MA05B
SHUNT REGULATOR marking "7A"
MARKING CODE R7 RF TRANSISTOR
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D06A
Abstract: LM3460 MF05A
Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.
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LM3460-1
LM3460
OT23-5
D06A
MF05A
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D06A
Abstract: LM3460 MF05A
Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.
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LM3460-1
LM3460
OT23-5
D06A
MF05A
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Yaesu
Abstract: marking code msop - 8 package analog devices F617 a007 PE4141-08MSOP-EK Analog 8 msop devices marking marking code 8 lead msop package analog devices
Text: Product Specification PE4141 Ultra-linear UltraCMOS Broadband Quad MOSFET Array Product Description Features • Ultimate Quad MOSFET array The PE4141 is an ultra-high linearity passive broadband Quad MOSFET array with high dynamic range performance capable
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PE4141
PE4141
Yaesu
marking code msop - 8 package analog devices
F617
a007
PE4141-08MSOP-EK
Analog 8 msop devices marking
marking code 8 lead msop package analog devices
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D44H8
Abstract: 2N3906 AN-450 D06A LM3460 MF05A
Text: LM3460-1.2, -1.5 Precision Controller for GTLp and GTL Bus Termination General Description Features The LM3460 is a monolithic integrated circuit designed for precision control of GTLplus and GTL Bus termination. This controller is available in a tiny SOT23-5 package, and includes an internally compensated op amp, a bandgap reference, an NPN output transistor, and voltage setting resistors.
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LM3460-1
LM3460
OT23-5
CSP-9-111S2.
D44H8
2N3906
AN-450
D06A
MF05A
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