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    MARKING CODE R1Y Search Results

    MARKING CODE R1Y Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS
    		Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV221SD/NOPB
    		Texas Instruments 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-WSON -40 to 85 Visit Texas Instruments Buy
    LMV228SD/NOPB
    		Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON Visit Texas Instruments Buy
    LMV225SD/NOPB
    		Texas Instruments RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 Visit Texas Instruments Buy
    LMV226TL/NOPB
    		Texas Instruments RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 Visit Texas Instruments Buy

    MARKING CODE R1Y Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Diode marking CODE R1j

    Abstract: Diode marking CODE R1K Diode marking CODE R1M R1M 29 CD214A-R150 R1100 R1200 R1600
    Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R11600 Glass Passivated Rectifiers General Information


    Original     		CD214A-R150 R11600 DO-214AC 2002/95/EC IPA0501 Diode marking CODE R1j Diode marking CODE R1K Diode marking CODE R1M R1M 29 R1100 R1200 R1600 PDF

    Diode marking CODE R1K

    Abstract: Diode marking CODE R1j 4 8 Diode marking CODE R1j
    Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop


    Original     		CD214A-R150 R12000 DO-214AC Diode marking CODE R1K Diode marking CODE R1j 4 8 Diode marking CODE R1j PDF

    Diode marking CODE R1K

    Abstract: R1M 29 CD214A-R150 R1100 R1200 R1600
    Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lead free as standard RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information


    Original     		CD214A-R150 R12000 DO-214AC Diode marking CODE R1K R1M 29 R1100 R1200 R1600 PDF

    Diode marking CODE R1K

    Abstract: Diode marking CODE R1j R12000 CD214A-R150 R1100 R1200 R1600 R11200 Diode marking CODE R150 marking code r1y
    Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ RoHS compliant* Glass passivated chip Low reverse leakage current Low forward voltage drop High current capability CD214A-R150~R12000 Glass Passivated Rectifiers General Information The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop


    Original     		CD214A-R150 R12000 DO-214AC Diode marking CODE R1K Diode marking CODE R1j R1100 R1200 R1600 R11200 Diode marking CODE R150 marking code r1y PDF

    2N297A JAN

    Abstract: germanium transistor pnp 2n297a 2N297A transistor marking 3-020 3036
    Contextual Info: M IL -S-19500/36C {j March 1967 SUPEH5EDÏNU M IL -S -19500,/36B 15 A pril 1963 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN P, GERMANIUM, HIGH-POWER TVTiP QVT4n | 1 1• i r e «iì«9 — iB 1irn. T h is sp ecifica tio n Is mandatory for u se by a ll D epart­


    OCR Scan     		MIL-S-19500/36C MIL-S-19500/36B 2N297A PR08LEMS 2N297A JAN germanium transistor pnp 2n297a 2N297A transistor marking 3-020 3036 PDF

    LEONE RELAY sc5

    Abstract: skip 30 NAC 12 I T4 BLM21AG601S transformer u4f pnp transistor data sheet bel 188 bel 187 transistor npn hypercom fast load skip 32 NAC 12 T3 skip 20 NAC 12 I T2 leone sc5 12 v relay
    Contextual Info: AN93 S i 2 4 9 3 / S i 2 4 5 7 / S i 2 4 3 4 / S i 2 4 1 5 / S i 2 4 0 4 M o d e m D e s i g n e r ’s G u i d e 1. Introduction board layout files available separately. These include double-sided and single-sided layouts with options for through-hole isolation components. Additionally,


    Original     		Si2493/Si2457/Si2434/Si2415 Si2404 LEONE RELAY sc5 skip 30 NAC 12 I T4 BLM21AG601S transformer u4f pnp transistor data sheet bel 188 bel 187 transistor npn hypercom fast load skip 32 NAC 12 T3 skip 20 NAC 12 I T2 leone sc5 12 v relay PDF

    mh msc-6 power factor controller

    Abstract: ic 8272 78p312 NT 78310 upd78312a nec 78312 a upd78310 IA-118 pd78310 UPD78310ACW
    Contextual Info: USER’S MANUAL NEC uP D 7 8 3 1 2 A SINGLE-CHIP MICROCOMPUTER JÍ/PD7831 OA ^P D 78312A /¿ P D 78P 312A ^P D 7 8 3 1 OA A //P D 7831 2 A (A ) Document No. IE U -1265D (O.D.No. IE M -5 0 8 6 F ) Date Published October 1993 P Printed in Japan USER’S MANUAL


    OCR Scan     		uPD7831 uPD78312A uPD78P312A uPD78310A -1265D PD7831OA PA-78P312CW: PA-78P312GF: PA-78P312GQ: mh msc-6 power factor controller ic 8272 78p312 NT 78310 nec 78312 a upd78310 IA-118 pd78310 UPD78310ACW PDF

    ats2300

    Abstract: ZENER Diode b212 ECS MOTHERBOARD pcb CIRCUIT diagram teltone tls 3 ATS010 si3006-B Si3006-B-FT RJ11 4 PIN JACK MODULE SPEC SHEET so8e pad CR0402-16W-000T
    Contextual Info: AN94 Si2401 M ODEM D ESIGNER ’ S G UIDE 1. Introduction This application note is intended to supplement the Si2401 data sheet and is divided into two sections: The "Functional Description" on page 4 and the "Software Design Reference" on page 15. The Hardware Design


    Original     		Si2401 ats2300 ZENER Diode b212 ECS MOTHERBOARD pcb CIRCUIT diagram teltone tls 3 ATS010 si3006-B Si3006-B-FT RJ11 4 PIN JACK MODULE SPEC SHEET so8e pad CR0402-16W-000T PDF