MARKING CODE PARI Search Results

SJS830100

Contextual Info: SJS830100 REV ROMMET MARKING .0 40 HIGH CHARACTERS COLOR: CONTRASTING ECN APP'D 6253 JT 8 /6 /0 8 6297 J T 1 /14/09 6431 J T 1 0 /2 8 /0 9 6716 .075 i OT COLOR: SEE TABLE 1 APCD YYW SJS83010X- ATE CODE I .662 REF *1 db WHITE MARKING \ ml ^— WHITE MARKING

77V1254

Abstract: L200PG 77V126L200
Contextual Info: 77V126L200 Device Errata Notes Supplemental Information The revision of the 77V126L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫  dt 77V1254 L200PG WByywwA XCyywwA Revision Date Code

77V106

Abstract: YB device marking Code
Contextual Info: 77V106 Device Errata Notes Supplemental Information The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF <\\ZZF Revision/Stepping Date Code

77V1254

Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

MARKING PARI SC70-6

Abstract: sot363 marking qs sm905
Contextual Info: SÌ1902DL Vishay Siliconix Dual N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id r D S (o n) (£2) A V P (A) 0.385 e VGS = 4.5 V 0.70 0.630 9 VGS = 2.5 V 0.54 20 SOT-363 SC-70 (6-LEADS) Marking Code L otTraceability and Date Code L— Pari # Code Top View

77V1254

Abstract: 77V1254L25
Contextual Info: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

77V1253

Abstract: 77V1254
Contextual Info: 77V1253L25 Device Errata Notes Supplemental Information The revision of the 77V1253L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

Contextual Info: 77V1054L25 Device Errata Notes Supplemental Information The revision of the 77V1054L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1054 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

Contextual Info: 77V1053L25 Device Errata Notes Supplemental Information The revision of the 77V1053L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1053 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

77V1254

Abstract: 77V1264
Contextual Info: 77V1264L200 Device Errata Notes Supplemental Information The revision of the 77V1264L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 77V1264 L200PG WByywwA XCyywwA Revision

77V106

Abstract: 77V107 YB device marking Code
Contextual Info: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping

Contextual Info: ,'79 HYLFH UUDWD ' 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1253 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location

YB device marking Code

Contextual Info: 9 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF Yyywwc Revision/Stepping

77V1254L200

Contextual Info: 9/ 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. This errata does not apply to the 77V1254L200 device.

Contextual Info: ADVANCE INFORMATION MICRONAS Edition May 31, 2000 6251-528-1AI HAL 1000 Programmable Hall Switch HAL 1000 ADVANCE INFORMATION Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code

TO92UT-1

Abstract: TO92UT
Contextual Info: DATA SHEET MICRONAS Edition March 4, 2004 6251-528-1DS HAL1000 Programmable Hall Switch MICRONAS HAL1000 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code

"Angle Sensor"

Abstract: hall effect interface WITH ADC HAll EFFECT SENSOR CODING inductive sensor oscillator circuit 800E DIN40839 HAL800 HAL800UT-A DSA003772
Contextual Info: PRELIMINARY DATA SHEET MICRONAS Edition Oct. 20, 1999 6251-441-1DS HAL 800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code

800E

Abstract: HAL800 HAL800UT-A HAll EFFECT SENSOR CODING hall sensors for magnetic measurements
Contextual Info: MICRONAS INTERMETALL Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code

Contextual Info: MICRONAS Edition Oct. 20, 1999 6251-109-4E 6251-441-1DS HAL800 Programmable Linear Hall Effect Sensor MICRONAS HAL 800 Contents Page Section Title 3 3 3 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Operating Junction Temperature Range TJ

Ceramic Capacitors

Abstract: sic-safco capacitor capacitor sic-safco Sic-Safco tableau des boitiers cms FIRADEC condensateur chimique 1000 uf EUROFARAD smd ceramic capacitor Microspire varistance
Contextual Info: 082 Paris Colombes St Nazaire Illange Lagny Marmoutier EUROFARAD Siège social / Headquarters 93, rue Oberkampf F - 75540 PARIS CEDEX 11 Tél. : +33 0 1 49 23 10 00 E-mail : info @ eurofarad.com www.eurofarad.com FIRADEC Casablanca Usines / Plants 23, rue Jeanne d'Arc

royal ohm chip resistor 1206

Abstract: royal ohm chip resistor 0805 royal ohm chip resistor 0603 RMC 0805 Royal OHM RMC0805 royal ohm chip resistor 3.9 K 1206 RMC 0603 1 ROYAL OHM 0402 0805 royal
Contextual Info: ROYAL OHM SPECIFICATION FOR APPROVAL FARNELL ELECTRONIC COMPONENTS. Description :_Chip Resistors_ HJW8xxxxxTxx RMC 1/8 W 1206 +/-1% & 5% HMWAxxxxxTxx RMC 1/10 W (0805) +/- 1% & 5% Pari no. : HPWGxxxxxTxx RMC 1/16 W (0603) + /- 1%& 5%

96BGA

Abstract: oscillator 10.66 ghz
Contextual Info: VITESSE SEMICONDUCTOR CORPORATION Product Brief 9.9/10.7 Gbit/sec SONET/SDH 1:16 Demultiplexer withh Clock Generator VSC8172 Features • 10 Gbit/sec SONET/SDH 1:16 Demux • No Reference Clock Detection • Integrated Clock and Data Recovery • Parity Bit Calculation

74HC28

Contextual Info: M74HC280 9-bit parity generator Datasheet - production data • Pin and function compatible with 74 series 280 • ESD performance – HBM: 2 kV – MM: 200 V – CDM: 1 kV SO14 TSSOP14 Description The M74HC280 is a high-speed CMOS 9-bit parity generator fabricated with silicon gate

SJS830201

Contextual Info: SJS830200 REV ECN APP'D 6253 JT 8 /6 /0 8 6297 JT 1/14/09 6431 JT 1 0 /2 8 /0 9 6716. SJS830200 SJS830200 0 .4 4 8 TA BLE 1 - PARIr NUMBER SCHEME KEY C YELLOW KEY B (GREEN) NOTES: MATERIALS: HOUSING: P A 6 /6 CONTACT RETAINER: STAINLESS STEEL GROMMET: SILICONE RUBBER PER A-A-59588