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    MARKING CODE IRLML6401 Search Results

    MARKING CODE IRLML6401 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE IRLML6401 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRLML6401

    Abstract: marking code IRLML6401 IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6302 marking
    Text: PD - 93756D IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier


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    PDF 93756D IRLML6401 OT-23 EIA-481 EIA-541. IRLML6401 marking code IRLML6401 IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6302 marking

    IRLML6401TRPBF

    Abstract: IRLML6401PBF
    Text: IRLML6401PbF l l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω


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    PDF IRLML6401PbF OT-23 IRLML6401TRPBF IRLML6401PBF

    marking 43A sot23

    Abstract: IRLML2803 IRLML2402 IRLML5103 IRLML6401 IRLML6402 IRLML6401GPBF
    Text: PD - 96160 IRLML6401GPbF l l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free Halogen-Free HEXFET Power MOSFET *  VDSS = -12V  ' RDS(on) = 0.05Ω


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    PDF IRLML6401GPbF OT-23 EIA-481 EIA-541. marking 43A sot23 IRLML2803 IRLML2402 IRLML5103 IRLML6401 IRLML6402 IRLML6401GPBF

    Untitled

    Abstract: No abstract text available
    Text: PD - 96160 IRLML6401GPbF l l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free Halogen-Free HEXFET Power MOSFET *  VDSS = -12V  ' RDS(on) = 0.05Ω


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    PDF IRLML6401GPbF OT-23 EIA-481 EIA-541.

    IRLML2402

    Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF
    Text: IRLML6401PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage


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    PDF IRLML6401PbF EIA-481 EIA-541. IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 43A MARKING CODE marking 43A sot23 MARKING BS SOT-23 IRLML6401PBF

    ml2803

    Abstract: IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302
    Text: PD- 93756C IRLML6401 l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description These P-Channel MOSFETs from International Rectifier


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    PDF 93756C IRLML6401 OT-23 EIA-481 EIA-541. ml2803 IRLML2803 IRLML6401 43a sot23 Y1 SOT-23 IRLML6401 SOT-23 IRLML2402 IRLML2502 IRLML5103 IRLML6302

    IRLML6401PBF

    Abstract: No abstract text available
    Text: PD - 94891 IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description


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    PDF IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML6401PBF

    IRLML2402

    Abstract: IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6401PBF
    Text: PD - 94891A IRLML6401PbF l l l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching 1.8V Gate Rated Lead-Free HEXFET Power MOSFET G 1 VDSS = -12V 3 D S RDS(on) = 0.05Ω 2 Description


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    PDF 4891A IRLML6401PbF OT-23 EIA-481 EIA-541. IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402 IRLML6401PBF

    sot-23 marking code pe

    Abstract: IRLML6401 SOT-23 MARKING tAN SOT-23 gi 9532 MARKING EK SOT-23 marking bad sot-23 IRLML5103 irlml2402 IRLML2803 IRLML6401
    Text: IRLML2402 Package Outline HEXFET MICRO3 SOT-23 Outline Dimensions are shown in millimeters (inches) D - B - 3 E -A - L E A D A S S IG N M E N TS 1 - G A TE 2 - S O U R CE 3 - D R A IN 3 3 D IM A H 1 0 . 20 ( .0 0 8 ) 2 M A M e e1 θ A -C B 0. 1 0 (.0 0 4 )


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    PDF IRLML2402 OT-23) IRLML2803 IRLML6302 IRLML5103 IRLML6402 IRLML6401 IRLML2502 IRLML5203 sot-23 marking code pe IRLML6401 SOT-23 MARKING tAN SOT-23 gi 9532 MARKING EK SOT-23 marking bad sot-23 IRLML5103 irlml2402 IRLML2803 IRLML6401

    IRLML2402

    Abstract: IRLML5103 IRLML6302 IRLML5203 IR
    Text: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91260E IRLML5103 OT-23 EIA-481 EIA-541. IRLML2402 IRLML5103 IRLML6302 IRLML5203 IR

    Untitled

    Abstract: No abstract text available
    Text: PD - 93757C IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier


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    PDF 93757C IRLML2502 OT-23 EIA-481 EIA-541.

    marking code IRLML2502

    Abstract: irlml application IRLML2502 IRLML2502 IRLML2502 G IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6401
    Text: PD - 93757C IRLML2502 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description These N-Channel MOSFETs from International Rectifier


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    PDF 93757C IRLML2502 OT-23 EIA-481 EIA-541. marking code IRLML2502 irlml application IRLML2502 IRLML2502 IRLML2502 G IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6401

    IRLML6402

    Abstract: AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502
    Text: PD - 93755B IRLML6402 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.065Ω S Description These P-Channel MOSFETs from International Rectifier utilize


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    PDF 93755B IRLML6402 OT-23 EIA-481 EIA-541. IRLML6402 AN-994 IRLML2402 IRLML6302 IRLML6402 micro3 application IRLML2502

    IRLML6302 marking

    Abstract: irlml2402 marking code IRLML2502 IRLML6302 IRLML6401 SOT-23 marking code IRLML6401
    Text: PD - 91259E IRLML6302 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -20V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91259E IRLML6302 OT-23 EIA-481 EIA-541. IRLML6302 marking irlml2402 marking code IRLML2502 IRLML6302 IRLML6401 SOT-23 marking code IRLML6401

    irlml2502

    Abstract: IRLML2502 G IRLML5103 IRLML5103 -30V
    Text: PD - 91260E IRLML5103 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance P-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = -30V G RDS(on) = 0.60Ω S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91260E IRLML5103 OT-23 EIA-481 EIA-541. irlml2502 IRLML2502 G IRLML5103 IRLML5103 -30V

    irlml2803 B

    Abstract: IRLML6401 IRLML2502 G irlml5103 1D IRLML5203 H IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402
    Text: PD - 91258D IRLML2803 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 30V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier


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    PDF 91258D IRLML2803 OT-23 EIA-481 EIA-541. irlml2803 B IRLML6401 IRLML2502 G irlml5103 1D IRLML5203 H IRLML2402 IRLML2803 IRLML5103 IRLML6302 IRLML6402

    Untitled

    Abstract: No abstract text available
    Text: PD - 93967A PROVISIONAL IRLML5203 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS RDS on max (mW) ID -30V 98@VGS = -10V -3.0A 165@VGS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier


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    PDF 3967A IRLML5203 OT-23 EIA-481 EIA-541.

    IRFML9244

    Abstract: IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF
    Text: IRLML2502PbF l l l l l l l l HEXFET Power MOSFET Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free G 1 VDSS = 20V 3 D S RDS(on) = 0.045Ω 2 Description


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    PDF IRLML2502PbF OT-23 IRFML9244 IRLML6344 IRLML2246 irlml0030 irlml2244 IRLML2502PbF

    IRLML6346

    Abstract: IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244
    Text: PD - 96310C IRLML9301TRPbF VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) HEXFET Power MOSFET G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


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    PDF 96310C IRLML9301TRPbF OT-23) AN-994. IRLML6346 IRLML2246 IRLML2244 IRLML6244 ML8244 IRLML6344 IRLML9303 IRFML9244 IRLML9301TRPBF IRFML8244

    IRLML6346

    Abstract: IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301
    Text: PD - 96309A IRLML0040TRPbF VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ HEXFET Power MOSFET V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits


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    PDF 6309A IRLML0040TRPbF OT-23) AN-994. IRLML6346 IRLML6244 irlml2246 IRLML6246 IRLML0060 IRLML2244 irlml0030 IRLML2060 IRFML9244 IRLML9301

    IRF micro3

    Abstract: IRLML9301TRPBF
    Text: PD - 96310C IRLML9301TRPbF HEXFET Power MOSFET VDS -30 V VGS Max ± 20 V RDS on max 64 mΩ 103 mΩ (@VGS = -10V) RDS(on) max (@VGS = -4.5V) G 1 3 D S 2 Micro3TM (SOT-23) IRLML9301TRPbF Application(s) • System/Load Switch Features and Benefits Benefits


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    PDF 96310C IRLML9301TRPbF OT-23) AN-994. IRF micro3 IRLML9301TRPBF

    IRLML0040TR

    Abstract: IRLML0040
    Text: PD - 96309A IRLML0040TRPbF HEXFET Power MOSFET VDSS VGS Max RDS on max (@VGS = 10V) RDS(on) max (@VGS = 4.5V) 40 ± 16 V 56 mΩ 78 mΩ V G 1 3 D S Micro3TM (SOT-23) IRLML0040TRPbF 2 Application(s) • Load/ System Switch • DC Motor Drive Features and Benefits


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    PDF 6309A IRLML0040TRPbF OT-23) AN-994. IRLML0040TR IRLML0040

    IRLML6346

    Abstract: IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020
    Text: PD - 96278B IRLML0030TRPbF VDS 30 V VGS Max ± 20 V RDS on max 27 mΩ 40 mΩ (@VGS = 10V) RDS(on) max (@VGS = 4.5V) HEXFET Power MOSFET G 1 3 D S Micro3TM (SOT-23) IRLML0030TRPbF 2 Application(s) • Load/ System Switch Features and Benefits Benefits Features


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    PDF 96278B IRLML0030TRPbF OT-23) AN-994. IRLML6346 IRLML6344 IRLML9303 IRFML9244 IRLML6244 Diode SOT-23 marking JE IRLML0030TRPBF irlml0030tr IRLML0060 DS 2020

    Untitled

    Abstract: No abstract text available
    Text: P D -93756 International 3BR Rectifier IRLML6401 HEXFET Power MOSFET • • • • • • Ultra Low O n-R esistance P-Channel M O SFET SO T-23 Footprint Low Profile <1.1 mm A vailable in Tape and Reel Fast Switching V Dss = -12V RüS(on) = 0.05Î2 Description


    OCR Scan
    PDF IRLML6401