VISHAY MARKING CODE
Abstract: TSOP-6 Marking
Text: Markings www.vishay.com Vishay Semiconductors Marking on IR Receiver Modules All cast photomodules for example: TSOP311. TSOP312. TSOP313. TSOP314. Code for lot tracking V 19 AAA4 TSOP3 1238 22642 5 max. Code for lot tracking 1.1 max. 3528 FV AAAB 20528-2
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TSOP311.
TSOP312.
TSOP313.
TSOP314.
TSOP61yyL
TSOP35xyy
TSOP35xyy
TSOP36xyy
TSOP35Dyy
VISHAY MARKING CODE
TSOP-6 Marking
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d0147
Abstract: 2SC SERIES 7626 transistor 1D TRANSISTOR TRANSISTOR 2SC npn, transistor, sc 107 b TAA 981 2SC3838K 2SC4083 T146
Text: 2SC3838K 2SC4083 Transistor, NPN Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: — 2SC3838K; AD^, where ★is hFE code — 2SC4083; 1D-*, where ★ is hFE code high transition frequency, typically
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2SC3838K
2SC4083
SC-59)
SC-70)
2SC3838K;
2SC4083;
2SC3838K
GD147bS
2SC3838K,
d0147
2SC SERIES
7626 transistor
1D TRANSISTOR
TRANSISTOR 2SC
npn, transistor, sc 107 b
TAA 981
2SC4083
T146
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BC 170 transistor
Abstract: No abstract text available
Text: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration
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17-16W
BC807W,
BC808W
OT-323
Q62702-C2321
18-16W
Q62702-Ã
18-25W
Q62702-C2323
18-40W
BC 170 transistor
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marking BSs mosfet
Abstract: Q62702-S631
Text: BSS119 SIPMOS N Channel MOSFET • SIPMOS - enhancement mode • Drain-source voltage Vfc» = 100V • Continuous drain current / D = 0.17A • Drain-source on-resistance • Total power dissipation /%>•<«> = 6.00 P0 = 0.36W Type Marking Ordering code for
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BSS119
Q62702-S631
marking BSs mosfet
Q62702-S631
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2SC4713
Abstract: ssf transistor
Text: 2SC4713K 2SC4774 Transistor, NPN Features • available in SMT3 SMT, SC-59 and UMT3 (UMT, SC-70) packages • package marking: 2SC4713K and 2SC4774; BM-*, where ★ is hFE code Dimensions (Units : mm) • very low output on state resistance • low capacitance
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2SC4713K
2SC4774
SC-59)
SC-70)
2SC4774;
2SC4713K
2SC4713K,
2SC4774
2SC4713
ssf transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAT 62-02W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-02W L Q62702-A1028 1 =C 2=A Package
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2-02W
Q62702-A1028
SCD-80
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Untitled
Abstract: No abstract text available
Text: 2SD1781K Transistor, NPN Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1781K; AF-*, where ★ is hFE code • extremely low collector saturation voltage • even though it is in a small package, it can draw large currents Dimensions (Units : mm)
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2SD1781K
SC-59)
2SD1781K;
Q16-o
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Q62702-S506
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for
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Q62702-S506
BSS87
Q62702-S506
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marking code FV
Abstract: Marking WZS
Text: SIEMENS BCR 142W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit « Built in bias resistor R1=22ki2, Ft2=47k£2 Pin Configuration WZs t =B Q62702-C2289 2=E Package o Marking Ordering Code BCR 142W II CO Type
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22ki2,
Q62702-C2289
OT-323
300ns;
marking code FV
Marking WZS
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Untitled
Abstract: No abstract text available
Text: T H I R DA N G L EP R O J E C T I O NI ALTERATION 1 SS U E ITEM CODE ECWF2W564JA 1 / 2W684JA 1 / 2W824JA { { 2Wl05JA { { 2W125JA { { 2W155JA 2W185JA { { 2W225JA { 2W275JA { { 2W335JA ( { 2W395JA 2W475JA { { ( { CAP DIMENSIONS VOLUME MARKING Note F T H
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Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 1.0 W Device Marking Code Nominal Zen. Vltg. @ IZT Test Current VZT V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 Part No. SMAJ4736A
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SMAJ4736A
SMAJ4737A
SMAJ4738A
SMAJ4739A
SMAJ4740A
SMAJ4741A
SMAJ4742A
SMAJ4743A
SMAJ4744A
SMAJ4745A
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Untitled
Abstract: No abstract text available
Text: .310 MAX. . 330MAX. 1. MARKING: NOTES: UMI , DATE CODE, UMI P/N. UNLESS OTHERWISE SPECIFIED. 4 5 1 09 ± . 015 TYP. 3 SD-83616-1610 2 REV DATE A 26JAN00 UM2000-0416 B 2 1 JUNE00 UM2000-0597 APPVD BY ECN NO. REL BY CH FVW 075 TYP, 038 . 1 83 + 1 36 17 • “3 5 “ • 34 •
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330MAX.
SD-83616-1610
26JAN00
UM2000-0416
JUNE00
UM2000-0597
CM6R37P0-S01
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ERA32
Abstract: T460 T151 T760 marking code CV3
Text: ERA32 ia • ftîfê '+ fè : Outline* Drawings FAST RECOVERY DIODE *3 T . \ — 28MIN — ¿08. 1 5 -28MIN— Features Super high speed switching. • 1&Vf Low VF ’ Marking A f - J - K : tt Color • a ftfttt High reliability code : Orange >> Abridged type name
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ERA32
28MIN
28MINâ
I95t/R89)
Shl50
T460
T151
T760
marking code CV3
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. C 2 3 RELEASED FOR PUBLICATION LOC REVISIONS DIST ALL RIGHTS RESERVED. COPYRIGHT 1 P DESCRIPTION LTR DATE DWN APVD 32,0 D D 21,0 18,0 A 10,0 1 3 GRAVAÇÃO MARKING 2 LOGOTIPO TYCO 4 TYCO LOGO CÓDIGO PAÍS PRODUTOR MANUFACTURER COUNTRY CODE
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSP 324 SIPM OS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1-5 .2.5 v Type VDS BSP 324 400 V Type BSP 324 Ordering Code Q67000-S215 0.1 7 A ^DS(on) Package Marking 25 a SOT-223 BSP 324 Tape and Reel Information E6327
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Q67000-S215
OT-223
E6327
053SbOS
fl235bOS
0GflbG22
D0flb023
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Untitled
Abstract: No abstract text available
Text: SIEMENS BSS 125 SIPMOS Small-Signal Transistor • N channel • Enhancement mode ^GS th = 1-5 .2.5 V Type ^DS BSS 125 600 V Type BSS 125 BSS 125 BSS 125 Ordering Code Q62702-S021 Q67000-S008 Q67000-S233 0.1 A ffDS(on) Package Marking 45 £1 TO-92 SS125
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Q62702-S021
Q67000-S008
Q67000-S233
SS125
E6288
E6296
E6325
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PH marking code sot223
Abstract: No abstract text available
Text: SIEMENS BSP 17 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^ G S th = 2 .1 Type .4 .0 V ^DS(on) BSP 17 Vds 50 V Type BSP 17 Ordering Code Q67000-S220 3.2 A 0.1 fl Package Marking SOT-223 BSP 17 Tape and Reel Information
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OT-223
Q67000-S220
E6327
PH marking code sot223
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Marking Code FGs
Abstract: FGS MARKING
Text: SIEMENS BSP 299 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated •^G S th =2.1 .4 .0 V Type VDS b ^DS(on) Package Marking BSP 299 500 V 0.4 A 4Q SOT-223 BSP 299 Type BSP 299 Ordering Code Q67000-S225 Tape and Reel Information
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OT-223
Q67000-S225
E6327
Stora99
Marking Code FGs
FGS MARKING
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63
BAR63
BAR63-04
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marking sSH sot-23
Abstract: MARKING CODE 028 sot 23 marking sSH 7m TRANSISTOR BC 431 marking BSs sot23 siemens
Text: SIEMENS BSS 119 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 6 - 2 -6 v Pin 1 Pin 2 Pin 3 "g Type BSS 119 VDS 100 V Type BSS 119 O rdering Code Q67000-S007 0.17 A ^DS(on) Package Marking 6n SOT-23 sSH Tape and Reel Information
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OT-23
Q67000-S007
E6327
OT-23
GPS05557
marking sSH sot-23
MARKING CODE 028 sot 23
marking sSH 7m
TRANSISTOR BC 431
marking BSs sot23 siemens
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SOT23 MARKING SBs
Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Text: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking
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VPS05557
OT-23
Q67000-S132
E6327
BSS145
OT-23
GPS05557
SOT23 MARKING SBs
VPS05557
marking SBs
BSS145 SD
marking BSs sot23 siemens
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tr 30 f 124
Abstract: SS124
Text: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 5 - 2-5 v Pin 1 Pin 2 Type BSS 124 VDS 400 V b 0.12 A Type BSS 124 BSS 124 Ordering Code Q62702-S614 Q67000-S172 flDS(on) 28 Q Pin 3 D G Package Marking TO-92
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Q62702-S614
Q67000-S172
E6288
tr 30 f 124
SS124
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ERA82-004
Abstract: P151 T151 T810 T930 a316
Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na
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ERA82-004
l95t/R89
P151
T151
T810
T930
a316
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a124 es
Abstract: rkm v
Text: E R D 3 2 3 A * ± 'J : Outline Drawings -K FAST RECOVERY DIODE Features : Marking S u p e r h ig h speed s w itc h in g • ffiVF A5 - 3 - K Color code ; 0 range Low V F B sW i Abridged Large c u rre n t • SSft is-ti ty p e name 5 7. V oltage class
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l95t/RB9
a124 es
rkm v
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