LDTD113EWT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113EWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTD113EWT1G
LDTD113EWT1G
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features Mechanical Data • • BVCEO > 50V IC = 4A Continuous Collector Current • Case: U-DFN2020-3 Type B • • • Low Saturation Voltage 100mV max @1A RSAT = 68 mΩ for a Low Equivalent On-Resistance
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ZXTN619MA
U-DFN2020-3
100mV
J-STD-020
DS31892
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2561a
Abstract: NEC 2561A 2561A NEC NEC 2561A w PS2561A-1 PS2561AL-1 PC 2561A E4 mark NEC 2561A circuit PS2561AL1-1
Text: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI PHOTOCOUPLER SERIES FEATURES • HIGH ISOLATION VOLTAGE: BV = 5 000 Vr.m.s. PS2561A-1 PS2561AL-1 PS2561AL1-1 PS2561AL2-1 DESCRIPTION NEC’s PS2561A-1 is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon phototransistor.
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PS2561A-1
PS2561AL-1
PS2561AL1-1
PS2561AL2-1
PS2561A-1
PS2561AL-1-E3,
PS2561AL2-1-E3,
PS2561AL-1-1-E3
PS2561AL-1
2561a
NEC 2561A
2561A NEC
NEC 2561A w
PC 2561A
E4 mark
NEC 2561A circuit
PS2561AL1-1
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ZXTN618MATA
Abstract: DFN2020B-3 ZXTN618MA
Text: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 20V RSAT = 47 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance
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ZXTN618MA
150mV
DFN2020B-3
J-STD-020
DS31890
ZXTN618MATA
DFN2020B-3
ZXTN618MA
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ZXTN
Abstract: DFN2020B-3 ZXTN620MA ZXTN620MATA
Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 80V RSAT = 68 mΩ IC = 3.5A Continuous Collector Current Low Equivalent On Resistance
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ZXTN620MA
185mV
DFN2020B-3
J-STD-020
DS31894
ZXTN
DFN2020B-3
ZXTN620MA
ZXTN620MATA
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ZXTN617MATA
Abstract: DFN2020B-3 ZXTN617MA
Text: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 15V RSAT = 45 mΩ IC = 4.5A Continuous Collector Current Low Equivalent On Resistance
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ZXTN617MA
100mV
DFN2020B-3
J-STD-020
DS31888
ZXTN617MATA
DFN2020B-3
ZXTN617MA
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ZXTN619MATA
Abstract: ZXTN619MA DFN2020B-3 marking code E4 NPN
Text: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SA TURA TION TRAN SISTOR Features Mechanical Data • • • • • • • • • • • • • • • VCEO = 50V RSAT = 68 mΩ IC = 4A Continuous Collector Current Low Equivalent On Resistance
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ZXTN619MA
100mV
DFN2020B-3
J-STD-020
DS31892
ZXTN619MATA
ZXTN619MA
DFN2020B-3
marking code E4 NPN
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SUT041C
Abstract: No abstract text available
Text: SUT041C Dual NPN Bipolar transistor Descriptions • General purpose amplifier • Recommended for LED Drive Application Features • Thermally Enhanced Power PKG • Low saturation: VCE sat = 0.5V Max • 2 NPN chips in TESOP-8M Package TESOP-8M Ordering Information
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SUT041C
KSD-T7L001-000
SUT041C
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Untitled
Abstract: No abstract text available
Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability
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2N3700UB
MIL-PRF-19500/391
2N3700UB
2N3700
MIL-PRF-19500/391.
2N3700UB.
T4-LDS-0185-3,
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2N3700 Equivalent transistor
Abstract: 2n3019 transistor 23/1N647-1 JANTXV
Text: 2N3700 Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700 NPN transistor comes in a hermetically sealed metal TO-18 package and is military qualified for high-reliability applications.
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2N3700
MIL-PRF-19500/391
2N3700
MIL-PRF-19500/391.
2N3700.
O-206AA)
T4-LDS-0185-2,
2N3700 Equivalent transistor
2n3019 transistor
23/1N647-1 JANTXV
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A
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ZXTN620MA
185mV
AEC-Q101
DFN2020B-3
DS31894
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DFN2020B-3
Abstract: ZXTN617MA ZXTN617MATA sot23 transistor marking y2
Text: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 15V IC = 4.5A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A
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ZXTN617MA
100mV
AEC-Q101
DFN2020B-3
DS31888
DFN2020B-3
ZXTN617MA
ZXTN617MATA
sot23 transistor marking y2
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN617MA 15V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 15V IC = 4.5A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A
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ZXTN617MA
100mV
AEC-Q101
DFN2020B-3
DS31888
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A
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ZXTN619MA
100mV
AEC-Q101
DFN2020B-3
DS31892
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A
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ZXTN618MA
150mV
AEC-Q101
DFN2020B-3
DS31890
621-ZXTN618MATA
ZXTN618MATA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN620MA 80V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 80V IC = 3.5A Continuous Collector Current Low Saturation Voltage 185mV max @ 1A
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PDF
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ZXTN620MA
185mV
AEC-Q101
DFN2020B-3
DS31894
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A
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ZXTN619MA
100mV
AEC-Q101
DFN2020B-3
DS31892
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ZXTN618MATA
Abstract: DFN2020B-3 ZXTN618MA ZXTN
Text: A Product Line of Diodes Incorporated ZXTN618MA 20V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 20V IC = 4.5A Continuous Collector Current Low Saturation Voltage 150mV max @ 1A
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ZXTN618MA
150mV
AEC-Q101
DFN2020B-3
DS31890
ZXTN618MATA
DFN2020B-3
ZXTN618MA
ZXTN
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Untitled
Abstract: No abstract text available
Text: SPICE MODEL: BC847CDLP BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
DS30817
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Untitled
Abstract: No abstract text available
Text: BC847CDLP N EW PRODU CT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
0015g
DS30817
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DFN1310H4-6
Abstract: No abstract text available
Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
DS30817
621-BC847CDLP-7
BC847CDLP-7
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BC847CDLP-7
Abstract: DFN1310H4-6 BC847CDLP
Text: BC847CDLP NEW PRODUCT NPN DUAL SURFACE MOUNT TRANSISTOR Features • • • • • Epitaxial Planar Die Construction Ideally Suited for Automated Assembly Processes Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2) Ultra Low Profile Package
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BC847CDLP
DFN1310H4-6
J-STD-020C
MILSTD-202,
0015g
DS30817
BC847CDLP-7
DFN1310H4-6
BC847CDLP
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PS2503-2
Abstract: PS2503-4 PS2503L-1 PS2503L-1-E3 PS2503L-2 PS2503L-2-E3 PS2503-1 PS2503-2-A
Text: PHOTOCOUPLER PS2503-1,-2,-4,PS2503L-1,-2,-4 LOW INPUT CURRENT, HIGH SPEED SWITCHING −NEPOC MULTI PHOTOCOUPLER SERIES Series− DESCRIPTION The PS2503-1, -2, -4 and PS2503L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor.
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PS2503-1
PS2503L-1
PS2503-1,
PS2503L-1,
PS2503L-1-E3,
PS2503L-2-E3,
E72422
PS2503-2
PS2503-4
PS2503L-1-E3
PS2503L-2
PS2503L-2-E3
PS2503-2-A
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistors PZT 2907 PZT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: PZT 2222 NPN PZT 2222 A (NPN) Type Marking Ordering Code (tape and reel) Pin Configuration
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OCR Scan
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Q62702-Z2028
Q62702-Z2025
OT-223
0235bD5
D1254bfl
fl235bQ5
535bG5
G1E247G
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