STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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Original
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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PDF
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Untitled
Abstract: No abstract text available
Text: Comchip SMD Super Fast Recovery Rectifiers SMD Diode Specialist SF1005-G Thru. SF1060-G Reverse Voltage: 50 to 600 Volts Forward Current: 10 Amp RoHS Device Features ITO-220AB -Low power loss,high efficiency. -Low power voltage,high current capability. -High surge capacity.
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Original
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SF1005-G
SF1060-G
ITO-220AB
2002/95/EC
MIL-S-19500/228
94-V0
ITO-220AC
QW-BS006
SF1005-G
EF1005
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology
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Original
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V15P45S
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology
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Original
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V15P45S
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
2002/95/EC.
2011/65/EU.
JS709A
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PDF
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VISHAY diode MARKING ED
Abstract: marking code diode EC SMD smd diode 86A
Text: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifiers Ultra Low VF = 0.31 V at IF= 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology
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Original
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V15P45S
J-STD-020,
2002/95/EC
2002/96/EC
O-277A
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
VISHAY diode MARKING ED
marking code diode EC SMD
smd diode 86A
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PDF
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byg21m
Abstract: SMD MARKING DIODE CODE EC smd rectifier marking code E3 SMD diode
Text: BYG21K/BYG21M Fast Avalanche SMD Rectifier DO-214AC SMA Cathode Band Features Low profile package 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) Ideal for automated placement Glass passivated junction 0.177 (4.50) 0.157 (3.99) Low reverse current
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Original
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BYG21K/BYG21M
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
byg21m
SMD MARKING DIODE CODE EC
smd rectifier
marking code E3 SMD diode
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PDF
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AY MARKING 3-PIN
Abstract: No abstract text available
Text: Philips Semiconductors Product specification General purpose controlled avalanche double diodes BAS29; BAS31 ; BAS35 PINNING FEATURES • Small plastic SMD package • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 90 V
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OCR Scan
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BAS29;
BAS31
BAS35
BAS29
BAS31;
AY MARKING 3-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: Product specification PMV90EN 30 V, single N-channel Trench MOSFET Rev. 1 — 13 February 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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PMV90EN
O-236AB)
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VISHAY diode MARKING ED
Abstract: V15P45S VISHAY MARKING ED to-277A J-STD-002 "Schottky Diode" SMPC Aluminum PCB
Text: New Product V15P45S Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Schottky Rectifier Ultra Low VF = 0.31 V at IF = 5 A FEATURES TMBS eSMP® Series • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Trench MOS Schottky technology
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Original
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V15P45S
J-STD-020,
O-277A
2002/95/EC
2002/96/EC
18-Jul-08
VISHAY diode MARKING ED
V15P45S
VISHAY MARKING ED
to-277A
J-STD-002
"Schottky Diode" SMPC
Aluminum PCB
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020C
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Original
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BYG23M
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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vishay MARKING UM SMA
Abstract: No abstract text available
Text: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC SMA
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BYG23M
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
vishay MARKING UM SMA
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PDF
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BYD24G
Abstract: BYG24D BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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BYG24D
BYG24J
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
BYD24G
BYG24G
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PDF
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BYG24D
Abstract: BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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Original
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BYG24D
BYG24J
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG24G
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product S5MS Vishay General Semiconductor SMD Photovoltaic Solar Cell Protection Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • Low leakage current • High forward surge capability
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Original
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J-STD-020,
2002/95/EC
2002/96/EC
DO-214AB
94trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time
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Original
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BYG21K
BYG21M
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum
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Original
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BYG23M
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
J-STD-002
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG21K & BYG21M Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristic • Fast reverse recovery time
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Original
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BYG21K
BYG21M
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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PDF
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BYG24D
Abstract: BYG24J JESD22-B102D J-STD-002B 175KW BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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Original
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BYG24D
BYG24J
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG24J
JESD22-B102D
J-STD-002B
175KW
BYG24G
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PDF
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BYG23M
Abstract: JESD22-B102D J-STD-002B TR3 Marking
Text: BYG23M Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time DO-214AC SMA
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Original
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BYG23M
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG23M
JESD22-B102D
J-STD-002B
TR3 Marking
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PDF
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BYG24D
Abstract: BYG24G
Text: BYG24D thru BYG24J Vishay General Semiconductor Fast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Fast reverse recovery time
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Original
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BYG24D
BYG24J
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
BYG24G
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PDF
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BYG22A, DO214AC
Abstract: No abstract text available
Text: BYG22A thru BYG22D Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Low forward voltage • Soft recovery characteristic
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Original
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BYG22A
BYG22D
DO-214AC
J-STD-020C
2002/95/EC
2002/96/EC
08-Apr-05
BYG22A, DO214AC
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PDF
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BYD20G
Abstract: byd20
Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time
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Original
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BYG20D
BYG20J
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
BYD20G
byd20
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PDF
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
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PDF
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vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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Original
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BYG10D
BYG10Y
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
vishay MARKING UM SMA
smd code marking e3
BYG10D-BYG10M
BYG10Y
JESD22-B102D
J-STD-002B
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PDF
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