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    MARKING CODE D3 TSOP6 Search Results

    MARKING CODE D3 TSOP6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    MARKING CODE D3 TSOP6 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MOSFET TRANSISTOR SMD MARKING CODE A1

    Abstract: NXP SMD mosfet MARKING CODE smd TRANSISTOR code marking AV SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE A1 K TRANSISTOR SMD MARKING CODE PNP TRANSISTOR SOT457 PNP transistor/Schottky rectifier module transistor smd yw PMEM4020AND
    Text: PMEM4020APD PNP transistor/Schottky rectifier module Rev. 02 — 31 August 2009 Product data sheet 1. Product profile 1.1 General description Combination of a PNP transistor with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT457


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    PMEM4020APD OT457 SC-74) PMEM4020AND PMEM4020APD MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE smd TRANSISTOR code marking AV SMD TRANSISTOR MARKING DE TRANSISTOR SMD MARKING CODE A1 K TRANSISTOR SMD MARKING CODE PNP TRANSISTOR SOT457 PNP transistor/Schottky rectifier module transistor smd yw PMEM4020AND PDF

    Untitled

    Abstract: No abstract text available
    Text: SMM7414DN Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) • High Quality Manufacturing Process Using SMM Process Flow • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized • Compliant to RoHS Directive 2002/95/EC


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    SMM7414DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TVS diode power line Application Note

    Abstract: PIN DIAGRAM OF RJ45 to usb dvi schematic sot-23 DIODE marking code D3 TVS diode Application Note MARKING 3B SOT23-6 sot-23-6 marking b on line ups circuit schematic diagram power line network communication rj45 connector to usb port
    Text: NUP4201MR6 Low Capacitance TSOP-6 Diode-TVS Array for High Speed Data Lines Protection The NUP4201MR6 transient voltage suppressor is designed to protect high speed data lines from ESD, EFT, and lighting. Features: • Low Capacitance 3 pF Maximum Between I/O Lines


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    NUP4201MR6 NUP4201MR6 SC-74, SC-59 OT-23 NUP4201MR6/D TVS diode power line Application Note PIN DIAGRAM OF RJ45 to usb dvi schematic sot-23 DIODE marking code D3 TVS diode Application Note MARKING 3B SOT23-6 sot-23-6 marking b on line ups circuit schematic diagram power line network communication rj45 connector to usb port PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    SQS423EN AEC-Q101 2002/95/EC SQS423EN-T1-GE3 11-Mar-11 PDF

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    Abstract: No abstract text available
    Text: SQS401EN Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC AEC-Q101 Qualifiedd


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    SQS401EN 2002/95/EC AEC-Q101 SQS401EN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS405EN Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 12 RDS(on) () at VGS = - 4.5 V 0.020 RDS(on) () at VGS = - 2.5 V 0.026 ID (A) • TrenchFET Power MOSFET


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    SQS405EN 2002/95/EC AEC-Q101 SQS405EN-T1-GE3 11-Mar-11 PDF

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    Abstract: No abstract text available
    Text: SQS462EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.063 RDS(on) () at VGS = 4.5 V 0.082 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


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    SQS462EN 2002/95/EC AEC-Q101 SQS462EN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition - 60 RDS(on) () at VGS = - 10 V 0.065 RDS(on) () at VGS = - 4.5 V 0.090 ID (A) - 16 Configuration


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    SQ7415AEN IEC61249-2-21 2002/95/EC AEC-Q101 SQ7415AEN-T1-GE3 11-Mar-11 PDF

    marking code Q011

    Abstract: No abstract text available
    Text: SQS420EN Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    SQS420EN AEC-Q101 2002/95/EC SQS420EN-T1-GE3 11-Mar-11 marking code Q011 PDF

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    Abstract: No abstract text available
    Text: SQS460EN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.040 RDS(on) () at VGS = 4.5 V 0.055 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


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    SQS460EN 2002/95/EC AEC-Q101 SQS460EN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS404EN Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition 30 RDS(on) (Ω) at VGS = 10 V 0.013 RDS(on) (Ω) at VGS = 4.5 V 0.015 RDS(on) (Ω) at VGS = 2.5 V


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    SQS404EN AEC-Q101 2002/95/EC SQS404EN-T1-GE3 11-Mar-11 PDF

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    Abstract: No abstract text available
    Text: SQS466EEN Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 RDS(on) () at VGS = 10 V 0.048 RDS(on) () at VGS = 4.5 V 0.074 ID (A) 8 Configuration Single PowerPAK 1212-8 D S 3.30 mm • Halogen-free According to IEC 61249-2-21


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    SQS466EEN 2002/95/EC AEC-Q101 SQS466EEN-T1-GE3 11-Mar-11 PDF

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    Abstract: No abstract text available
    Text: SQS464EEN Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


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    SQS464EEN 2002/95/EC AEC-Q101 SQS464EEN-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS423EN Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Compliant to RoHS Directive 2002/95/EC


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    SQS423EN AEC-Q101 2002/95/EC SQS423EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    sqs405

    Abstract: No abstract text available
    Text: SQS405EN Vishay Siliconix Automotive P-Channel 12 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition - 12 RDS(on) () at VGS = - 4.5 V 0.020 RDS(on) () at VGS = - 2.5 V 0.026 ID (A) • TrenchFET Power MOSFET


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    SQS405EN 2002/95/EC AEC-Q101 SQS405EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sqs405 PDF

    PIMD3

    Abstract: PEMB1
    Text: PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors; R1 = 10 k, R2 = 10 k Rev. 11 — 25 September 2013 Product data sheet 1. Product profile 1.1 General description NPN/PNP Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic


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    OT666 OT457 OT363 SC-74 SC-88 PEMB11 PUMB11 PEMH11 PUMH11 AEC-Q101 PIMD3 PEMB1 PDF

    land pattern for ppak

    Abstract: No abstract text available
    Text: SQS484EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 40 RDS(on) () at VGS = 10 V 0.009 RDS(on) () at VGS = 4.5 V


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    SQS484EN AEC-Q101 SQS484EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 land pattern for ppak PDF

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    Abstract: No abstract text available
    Text: SQS400EN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS400EN AEC-Q101 2002/95/EC SQS400EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    land pattern for TSSOP-8

    Abstract: No abstract text available
    Text: SQS460EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.048 ID (A) • 100 % Rg and UIS Tested


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    SQS460EN AEC-Q101 SQS460EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 land pattern for TSSOP-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS423EN www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd PRODUCT SUMMARY VDS (V) - 30 RDS(on) () at VGS = - 10 V • 100 % Rg and UIS Tested 0.021 RDS(on) () at VGS = - 4.5 V


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    SQS423EN AEC-Q101 SQS423EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS850EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualified 60 RDS(on) () at VGS = 10 V 0.0215 RDS(on) () at VGS = 4.5 V 0.0261 ID (A) • 100 % Rg and UIS Tested


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    SQS850EN AEC-Q101 SQS850EN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


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    SQS464EEN AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


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    SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQS462EN www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


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    SQS462EN AEC-Q101 2002/95/EC SQS462EN-T1-GE3 11-Mar-11 PDF