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    MARKING CODE CGB Search Results

    MARKING CODE CGB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54LS42/BEA Rochester Electronics LLC 54LS42 - DECODER, BCD-TO-DECIMAL - Dual marked (M38510/30703BEA) Visit Rochester Electronics LLC Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING CODE CGB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Q68000-A8370

    Abstract: CGY MW
    Text: GaAs Components Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1 170 CF 739 MSs Q62702-F1215


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    PDF 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 Q62703-F97 Q68000-A8370 CGY MW

    smd code marking book

    Abstract: smd code book marking code H2 SMD GPS09230 Marking code CGB
    Text: GaAs HBT CGB 90 Preliminary Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS-switchable high/low-power mode Simple input and output match on PCB


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    PDF P-TSSOP-10-2 Q62702-G0112 GPS09230 smd code marking book smd code book marking code H2 SMD GPS09230 Marking code CGB

    smd code book

    Abstract: GPS09230 tdma block diagram Q62702-G0113
    Text: GaAs HBT CGB 190 Preliminary Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones. Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Simple input and output match on PCB


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    PDF P-TSSOP-10-2 Q62702-G0113 GPS09230 smd code book GPS09230 tdma block diagram Q62702-G0113

    murata COG capacitor

    Abstract: CGB241 capacitor 22 pf MARKING pg SMA
    Text: CGB 241 Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency


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    PDF CGB241 murata COG capacitor capacitor 22 pf MARKING pg SMA

    50 ZL 220

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Preliminary Data Sheet • 2 stages Bluetooth InGaP HBT-Power Amplifier • Single Voltage Supply • Operating voltage range: 2.0 to 6 V • POUT = 23 dBm at VD = 3.2 V • Overall power added efficiency up to 50% • 4 Power Steps Analog Power Control


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    PDF Bm/30% IEEE802 P-TSSOP-10-2 Q62702-G0174 04023J0R8BBW LL1608-FS GPS09230 50 ZL 220

    VQFN24

    Abstract: rf channel trap circuit CGB191 marking gain stage GaAs MMIC AMPLIFIER VQFN-24
    Text: GaAs MMIC CGB191 Target Datasheet • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones • Integrated temperature compensated bias circuit


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    PDF CGB191 VQFN-24 25MHz 29dBm, 29dbm VQFN24 VQFN24 rf channel trap circuit CGB191 marking gain stage GaAs MMIC AMPLIFIER VQFN-24

    29dBm

    Abstract: CGB191 Q62702-G0131 VQFN24 rf channel trap circuit
    Text: GaAs MMIC CGB191 Target Datasheet • • • • • ESD: HBT power amplifier for 1900 MHz CDMA, TDMA portable cellular phones Integrated temperature compensated bias circuit


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    PDF CGB191 Q62702-G0131 VQFN-24 VQFN24 29dBm CGB191 Q62702-G0131 VQFN24 rf channel trap circuit

    marking code C3 SMD ic

    Abstract: GVQ09253 Q62702-G0131 smd power amplifier H2 MARKING CODE
    Text: GaAs MMIC CGB 191 Target Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match


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    PDF P-VQFN-24-3 Q62702-G0131 GVQ09253 marking code C3 SMD ic GVQ09253 Q62702-G0131 smd power amplifier H2 MARKING CODE

    smd power amplifier H2 MARKING CODE

    Abstract: CGB 191
    Text: GaAs MMIC CGB 191 Target Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDMA and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match


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    PDF P-VQFN-24-3 Q62702-G0131 GVQ09253 smd power amplifier H2 MARKING CODE CGB 191

    MMIC marking CODE c4

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 241 Target Datasheet ?2 stages Bluetooth InGaP HBT-Power Amplifier ?Single Voltage Supply ?Operating voltage range: 2.0 to 6 V ?Pout = 23dBm at Vd=3.2V


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    PDF 23dBm 16dBm 35dBc IEEE802 06035J1R8BBT LL1608-FS MMIC marking CODE c4

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 241 Target Datasheet • • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 06035J1R8BBT LL1608-FS

    JUMPER-0603

    Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
    Text: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V


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    PDF /GSM900 CGB98 Q62702G09111 P-TSSOP10-2 JUMPER-0603 CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 91 Target Data Sheet • • • • • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode Internal input match


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    PDF P-VQFN-24-3 GVQ09253

    VQFN24

    Abstract: CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73
    Text: GaAs MMIC CGB91 Target Datasheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit


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    PDF CGB91 VQFN24 VQFN24 CGB91 VQFN-24 Marking code CGB tdma circuit diagram VC-37 MMIC marking CODE 73

    TriQuint PACKING

    Abstract: AVX CGB marking code murata label CGB241 AVX COG Capacitor schematic diagram of bluetooth device
    Text: CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1, or IEEE 802.11b . Its high power added efficiency (typically 50%) and single positive supply operation makes


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    PDF CGB241 CGB241 TriQuint PACKING AVX CGB marking code murata label AVX COG Capacitor schematic diagram of bluetooth device

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 40dBc IEEE802

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 40dBc IEEE802

    transistor bc 499

    Abstract: 1CS K2 marking 1cs transistor Bc 580
    Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code


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    PDF Q62702-C2372 OT-363 BC847S transistor bc 499 1CS K2 marking 1cs transistor Bc 580

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM


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    PDF Q62702-F1519 OT-323 IS21el2 G12171D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF 900MHz BFG193 Q62702-F1291 OT-223 235b05 Q12177D D1E1771

    P-SOT-143

    Abstract: CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 Q62702-F1215 G69 marking
    Text: GaAs Components Infineon t »c h n o !o g i ss Alphanumeric Type Index 12 Alphanumeric Type Index GaAs RF-Transistors, MMICs and Modules Type Marking Ordering Code Package Page BGV 503 BGV 503 Q62702-L0132 P-TSSOP-10-1 170 BGV 903 BGV 903 Q62702-L0131 P-TSSOP-10-1


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    PDF CFY30 1900C Q62702-L0132 Q62702-L0131 Q62702-F1215 Q62702-F1391 Q62705-K0603 Q62705-K0604 Q62702-G0116 P-SOT-143 CSY210 Type CF 739 Marking Ordering Code MSs P-SOT343-4-1 cly5 P-SOT143-4-1 G69 marking

    4456-P

    Abstract: No abstract text available
    Text: In fineon ♦s*î hno!09 CGB 91 GaAs MMIC Target Data Sheet • HBT power amplifier for 800 MHz AMPS, CDMA and TDMA portable cellular phones • Integrated temperature compensated bias circuit • Power down control • CMOS- switchable high/low-power mode


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    PDF P-VQFN-24-3 4456-P

    mmic h2

    Abstract: Marking code CGB
    Text: In fineon tec hn c ! o g ies GaAs MMIC CGB 191 Target Data Sheet • • • • • HBT power amplifier for 1900 MHz CDMA, TDM A and WCDMA portable cellular phones Integrated temperature compensated bias circuit Power down control CMOS- switchable high/low-power mode


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    PDF Q62702-G0131 P-VQFN-24-3 mmic h2 Marking code CGB

    mira

    Abstract: INFINEON package PART MARKING CC 0603 COG
    Text: Infineon ♦s í h « c l o n i e s CGB 240 GaAs MM 1C Preliminary Data Sheet • 2 stages Bluetooth InGaP HBT-Power Amplifier • Single Voltage Supply • • Operating voltage range: 2.0 to 6 V p QUT = 23 dBm at VD = 3.2 V • Overall power added efficiency up to 50%


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    PDF Bm/30% IEEE802 Q62702-G0174 P-TSSOP-10-2 04023J0R8BBW LL1608-FS mira INFINEON package PART MARKING CC 0603 COG