MARKING CODE CA SOT363 Search Results

IR 822P

Abstract: B8226 B822P 8227 hsms2827 b8228 B822R hsms-2827 cross reference B822 B 8227 Schottky Quad
Contextual Info: Bay Linear Inspire the Linear Power B8220 Surface Mount Zero Bias Schottky Detector Diodes Series Description Features This specific line of Schottky diodes were specifically designed for both digital and analog applications. This series includes a wide range of specifications and

tel 839b

Abstract: B849A HSMP-3892 B8394 389C sot363 marking code ca HSMP-3895 839B B8390 B839A
Contextual Info: Bay Linear Inspire the Linear Power B8390 Surface Mount RF PIN Switch Diodes Series Description Features The B-839x series is optimized for switching applications where low resistance at low current and low capacitance are required. The B-849x series products

INA-02186

Abstract: MSA0485 sot363 marking code ca INA-10386 AT-41485 msa0185 msa0304 msa-1105 AT-41511 MSA-08
Contextual Info: Hewlett-Packard Company Communication Semiconductor Solutions Division 39201 Cherry Street Newark, CA 94560-4967 Customer Change Notice CCN 9808A For Hewlett-Packard Customer Notification Date: August 24, 1998 Parts Affected: All packing options of the following standard part numbers and their respective specials

SC70-6L

Abstract: marking 52 sot363 sot363 marking code 385 SOT-363 mosfet marking s1 sot363 marking 52 sot-363 mosfet 400 V 10A Dual N sot363 marking code ca MARKING CODE ca sot363
Contextual Info: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

Contextual Info: STN6303 Dual N Channel Enhancement Mode MOSFET 1.0A DESCRIPTION STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

SC70-6L

Abstract: STN6335 marking 6l marking s1 sot363 marking 320 SOT-363 SC706L marking 52 sot-363 Dual N
Contextual Info: 5 STN633 STN6335 Dual N Channel Enhancement Mode MOSFET 0.95A DESCRIPTION STN6335 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

P channel MOSFET 10A

Abstract: stp630 MARKING CODE ca sot363 high current sot-363 p-channel mosfet Marking Code 3 sc70-6l sot363 marking code ca STP6308 marking 6l SC70-6L p channel mosfet 10a 20v
Contextual Info: P630 8 ST STP 6308 Dual P Channel Enhancement Mode MOSFET -1.0A DESCRIPTION STP6308 is the dual P-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching

transistor cross reference

Abstract: RT1N241M N10 SOT363 SOT-363 marking n10 Transistor ROHM N14 N06 TRANSISTOR n10 marking code sot 23 RT1N441C mun5132 DTA114EEA
Contextual Info: New Product Announcement July 2002 Announcing Full Line of 100mA Pre-biased Transistors in Surface Mount Packages Singles in SOT-523, SOT-323, SOT-23 & SC-59 Duals in SOT-363 & SOT-26 / SC-74 NPN PNP R1 R1 R2 R2 NPN Dual R 1 R2 R2 R 1 PNP Dual NPN/PNP Complementary Dual

ESD18VU1B-02LS

Abstract: murata nfc antenna ESD18VU1B-02LRH nfc pcb antenna
Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B Series ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH ESD18VU1B-02LS Data Sheet Revision 1.1, 2012-05-30 Final Power Management & Multimarket Edition 2012-05-30 Published by

TRANSISTOR SMD MARKING CODE w2

Abstract: smd TRANSISTOR code marking w2 marking code C1H SMD circuit diagram of philips PC satellite receiver marking code C1H mmic lc oscillator 30ghz shf schematic circuit 6 pin TRANSISTOR SMD CODE PA GSM intercom circuit diagram vlf metal detector schematic murata smd inductors marking codes
Contextual Info: Appendix RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors Philips Semiconductors RF Manual 5th edition APPENDIX Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ESD18VU1B-02LRH ESD / Transient Protection Diode for Near Field Communication NFC ESD18VU1B-02LRH Data Sheet Revision 1.4, 2013-08-07 Final Power Management & Multimarket Edition 2013-08-07 Published by Infineon Technologies AG

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

Contextual Info: Ultra Low Capacitance 4 -Line ESD Protection Array Product Description Features The GSE6V8UW is 4-channel very low capacitance ESD transient voltage suppressor which provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge. It is

Contextual Info: BAS16DW BAS16DW Fast Switching Surface Mount Si-Planar Diodes Schnelle Si-Planar-Dioden für die Oberflächenmontage Version 2014-08-19 ±0.1 2 x 0.65 5 4 ±0.1 6 0.9±0.1 1 2 2.1 Type Code 1.25±0.1 2 Power dissipation – Verlustleistung 200 mW Repetitive peak reverse voltage

SMD MARKING CODE 16t

Abstract: MARKING CODE 16t sot363 smd marking AV SOT363 Marking 16t sot marking AH sot363 sot363 MARKING 16t smd marking code cp smd diode PD voltage multiple diode smd diode code CP
Contextual Info: MULTIPLE TERMINALS SMD SWITCHING DIODE TWG4148T-16WS Multiple Terminals SMD Switching Diode Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion High Conductance RoHS compliant SOT-363 Mechanical Data SOT-363, Plastic Case

SI1912EDH-T1-E3

Abstract: Si1912EDH Si1912EDH-T1-GE3 "MARKING CODE CA"
Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

sot 363 marking J IX

Contextual Info: W Â^ Ê H EW LETT ItfS l PACKARD Surface Mount RF Schottky Diodes in SOT-363 SC-70, 6 Lead Technical Data HSM S-280L/M/N/P/R HSMS-281L HSM S-282L/M/N/P/R Features • Surface Mount SOT-363 Package • Low Turn-On Voltage (A s Low as 0.34 V at 1 mA) • Low FIT (Failure in Tim e)

Si1912EDH

Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS

smd code book

Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ

Contextual Info: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 5 4 ±0.1 6 ±0.1 0.9 1 2 2.1 Type Code 1.25±0.1 2 2 x 0.65 3 2.4

MARKING CODE 13t sot363

Abstract: transistor marking T2 transistor bt2 sot363 13t 13t transistor BC847PN marking 13t MARKING bt1 sot363 BC847PN SOT363 SOT363 13T MARKING
Contextual Info: BC847PN BC847PN Complementary General Purpose Si-Epitaxial PlanarTransistors Komplementäre Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN/PNP NPN/PNP Version 2005-07-06 ±0.1 2 2 x 0.65 4 1 2 2.1 Type Code 1.25±0.1 5 ±0.1 6 0.9±0.1 3 2.4

Si1912EDH

Abstract: Si1912EDH-T1-E3 Si1912EDH-T1-GE3 SI1912EDH-T1
Contextual Info: Si1912EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.280 at VGS = 4.5 V 1.28 0.360 at VGS = 2.5 V 1.13 0.450 at VGS = 1.8 V 1.0 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs: 1.8 V Rated

s0317

Abstract: Si1912EDH
Contextual Info: Si1912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 2000 V D Thermally Enhanced SC-70 Package VDS (V) rDS(on) (W) ID (A) 0.280 @ VGS = 4.5 V 1.28 APPLICATIONS