MARKING CODE AS SOT-25 YP Search Results

Contextual Info: SUT390J Epitaxial planar NPN silicon transistor Description • Com plex t ype bipolar t ransist or Feature • Sm all package save PCB area • Reduce quant it y of part s and m ount ing cost • Two SBT3904 chips in SOT- 363 package Package : SOT-363 Ordering Information

marking 5y transistor

Abstract: transistor bc 241 transistor BF 243 CF-912 BC238C Telefunken u 237 SMA marking code 1R transistor bf 244
Contextual Info: TELEFUNKEN ELECTRONIC fllC D • electronic 81200% 000537» S Markedwith;CF3 U r 51 I £. Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications; Gain controlled amplifiers and mixers up to 2 GHz in common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with

D 823 transistor

Abstract: BF56 BF821S
Contextual Info: TELEFUNKEN ELECTRONIC 17E » • a'lSDQ^b 0 0 0 ^ 2 3 IALGG BF 821 S BF 823 S TTllUlFüiKIKIKI electronic C rM tM "ftchrtotoQtes Silicon PNP Epitaxial Planar Transistors A p p lica tio n s: For telephone sets, telecommunication circuits, hybrid circuits, video-B-class power

Contextual Info: KF055 PF276-01 SCI7 7 OOYs.rte/SCI7701Ysè,i. CMOS VOLTAGE DETECTOR #Voltage Detector #Many Types #Low Operating Supply Current •DESCRIPTION The SCI7700Yseries/SCI7701YSeries are a series of low-power precision voltage detectors, which do not require external adjustments. The SCI7700Yseries/SCI7701Yseries have such applications as battery-life

Contextual Info: GM2950/GM2951 100mA, LOW DROPOUT VOLTAGE REGULATORS Description Features The GM2950 and GM2951 is a low power voltage regulator. This device is an excellent choice for use in battery powered application such as cordless telephone, radio control systems, and portable

Contextual Info: 19-1280; Rev 1; 10/97 jv w y x a jv x _ F e a t u r e s The M AX6501-M AX6504 low-cost, fully integrated tem ­ perature sw itches assert a logic signal when their die tem perature crosses a factory-program m ed threshold. O perating from a +2.7V to +5.5V supply, these devices

MA SOT23-5 ROHS

Abstract: marking code AS sot-25 yp GM6155-AST25RG yp sot-25
Contextual Info: GM6155 GM6155 150mA LOW NOISE LDO WITH ENABLE FUNCTION Description Features Ultra low noise output GM6155 is a high efficient LDO with features as such ultra low noise output, ultra low dropout voltage typically 17mV at light load and 165mV at 50mA load , and low ground current (600µA at

jd 1803 IC

Abstract: jd 1803 4 pin jd 1803 data 4 pins jd 1803 JD 1803 b Maxim Integrated Products jd 1803 mark HG SOT JD 1803 fy sot 143
Contextual Info: 19-2000; Rev 1; 1/99 > k i y i x i > k i O p e n - D r a i n S O T y P R e s e t Ci r cui t The M A X 6315 lo w -p o w e r C M O S m ic ro p ro c e s s o r pP s u p e rv is o ry c irc u it is d e s ig n e d to m o n ito r p o w e r s u p ­ p lie s in pP and d ig ita l system s. It p ro v id e s e x c e lle n t c ir­

MARKING MHT

Contextual Info: T IP 'N RING C eram ic C apacitors y* FEATURES • • • • • • • Ideal for telephone line Tip T4 Ring™ filtering Replaces high voltage leaded film capacitors Rated for telephone voltages Save board space and weight Surface mount (EIA sizes) packages

FL014

Abstract: FL014 Example AN-994 IRFL9014 IRFL4310
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

Contextual Info: IRFL9014 MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A S Description S O T -2 2 3 The SOT-223 package is designed for surface-mount using

Contextual Info: S E M IC O N D U C T O R i FDN361AN N-Channel, Logic Level, PowerTrench1 General Description Features This N-Channel Logic Level M O SFET is produced using Fairchild Sem iconductor's PowerTrench process that has been especially tailored to minimize the on-state resistance

Contextual Info: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize

AN-994

Abstract: IRLL014
Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

AN-994

Abstract: IRFL9110
Contextual Info: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier

IRFL9014

Abstract: sot-223 MOSFET AN-994
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

W1P 59 transistor

Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Contextual Info: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors

Contextual Info: PD - 90862A IRFL214 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 250V RDS on = 2.0Ω G ID = 0.79A S Description

irfl9014

Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier

Contextual Info: PD - 90864A IRFL9110 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -100V RDS on = 1.2Ω G ID = -1.1A Description S Third Generation HEXFETs from International Rectifier

Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

AN-994

Abstract: IRLL014
Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

IRLL014

Abstract: AN-994 9040
Contextual Info: PD - 90866A IRLL014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching Ease of Paralleling D VDSS = 60V RDS(on) = 0.20Ω G ID = 2.7A S Description

IRFL9014

Abstract: AN-994
Contextual Info: PD - 90863A IRFL9014 HEXFET Power MOSFET l l l l l l l Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Fast Switching Ease of Paralleling D VDSS = -60V RDS on = 0.50Ω G ID = -1.8A Description S Third Generation HEXFETs from International Rectifier