VISHAY MARKING CODE
Abstract: Vishay DaTE CODE GENERAL SEMICONDUCTOR MARKING EG SMB Part marking MBL104S
Text: PDD Marking www.vishay.com Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600ï
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
VISHAY MARKING CODE
Vishay DaTE CODE
GENERAL SEMICONDUCTOR MARKING EG SMB
Part marking
MBL104S
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PDF
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GENERAL SEMICONDUCTOR MARKING SJ SMA
Abstract: VISHAY MARKING SJ VISHAY MARKING SJ SMA Vishay diodes code marking bys 025 tvs SMC MARKING VISHAY MARKING CODE TVS AE SMA SMC MARKING SJ MR06X
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Package: DO-204AL/DO-204AC/DO-201AD/GP20/1.5KE/P600 Examples: Polarity Cathode Band Part Number P6KE22 621X GP15M 0621X Logo/ Date Code 1.5KE15A 0621X 1N6275A Cathode Band Vishay Part Number
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Original
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DO-204AL/DO-204AC/DO-201AD/GP20/1
5KE/P600
P6KE22
GP15M
0621X
5KE15A
1N6275A
SB340
GENERAL SEMICONDUCTOR MARKING SJ SMA
VISHAY MARKING SJ
VISHAY MARKING SJ SMA
Vishay diodes code marking
bys 025
tvs SMC MARKING
VISHAY MARKING CODE
TVS AE SMA
SMC MARKING SJ
MR06X
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PDF
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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Original
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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PDF
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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Original
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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PDF
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LNE150
Abstract: LNE150K1 LNE150ND
Text: LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code
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Original
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LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
OT-23.
LNE150
LNE150K1
LNE150ND
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PDF
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marking code SG transistors
Abstract: LNE150 LNE150K1 LNE150ND diode MARKING CODE sg
Text: – – E T E LNE150 OBSOL Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information Order Number / Package Product marking for TO-236AB: BVDSS / BVDGS RDS ON (max) ID(ON) (min) TO-236AB* Die NEE❋ 500V 1.0KΩ 3.0mA LNE150K1 LNE150ND where ❋ = 2-week alpha date code
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Original
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LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
OT-23.
marking code SG transistors
LNE150
LNE150K1
LNE150ND
diode MARKING CODE sg
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PDF
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ttl crystal oscillator 5.0 volt
Abstract: ir 9922 S1903 S1950 Saronix 100 MHz oscillator Saronix CRYSTAL oscillator
Text: SARONIX B.V. DATA SHEET 9922 518 721. series Crystal Clock Oscillator Type S1903/S1950 CerOx in ceramic package (ACMOS/TTL) Product specification Supersedes date of 1998 July 14 File under SARONIX B.V., SBV2 1999 Feb 09 SaRonix B.V. Doetinchem, The Netherlands
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Original
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S1903/S1950
SBV2-116
ttl crystal oscillator 5.0 volt
ir 9922
S1903
S1950
Saronix 100 MHz oscillator
Saronix CRYSTAL oscillator
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PDF
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Untitled
Abstract: No abstract text available
Text: Dearborn electronics inc. DEARBORN P/N 721P103X9600S04 HERMETICALLY SEALED METALIZED POLYPROPYLENE DIELECTRIC CAPACITOR 0.844 ±.031 +1 1.63 -0 0.813 ±.031 .17 Max Typ. +1 1.63 -0 OL 87SK738 Rev 0 05/29/07 .332 Max +.015 0.312 -.005 PHYSICAL CHARACTERISTICS -
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Original
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721P103X9600S04
87SK738
400Hz
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PDF
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IC 723
Abstract: 723 ic IC 1 723 uA 723 723DC mA 723 BF Marking pdf application of IC 723 Q62702-F1239 Q62702-F1309
Text: PNP Silicon High-Voltage Transistors ● ● ● ● ● BF 721 BF 723 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 720/722 NPN
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Q62702-F1239
Q62702-F1309
OT-223
IC 723
723 ic
IC 1 723
uA 723
723DC
mA 723
BF Marking
pdf application of IC 723
Q62702-F1239
Q62702-F1309
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PDF
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BF marking code
Abstract: MARKING CODE 720 720 marking marking 722 Q62702-F1238 Q62702-F1306 TS110
Text: NPN Silicon High-Voltage Transistors ● ● ● ● ● BF 720 BF 722 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-emitter saturation voltage Low capacitance Complementary types: BF 721/723 PNP
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Original
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Q62702-F1238
Q62702-F1306
OT-223
BF marking code
MARKING CODE 720
720 marking
marking 722
Q62702-F1238
Q62702-F1306
TS110
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PDF
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BS-942
Abstract: B-931T
Text: ATP - Tooling Kit- 19288-0101 Crimp Tooling Specification Sheet ATP Tooling Kit No. 19288-0101 Engineering No. ATP-B-721 SCOPE Tooling: ATP Tooling Kits used with Molex Air Tape Press: ATP 100 and 300 series or a Molex Mylar Tape Applicator (MTA series). Refer to the appropriate tool instruction manual for installation and operation information.
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Original
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ATP-B-721
ATP-B-721-E2
ATP-B-721-E1
BS-942
B-931T
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PDF
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KAF-39000
Abstract: CCD aerial application 4H0947 KAF-39000-AAA-DD-AA KAF-39000-AA 1000X Kodak Company kodak ccd KAF-39000-CA
Text: PRODUCT SUMMARY KODAK KAF-39000 IMAGE SENSOR 7216 H X 5412 (V) FULL FRAME CCD IMAGE SENSOR DESCRIPTION The KODAK KAF-39000 is a dual output, high performance CCD (charge coupled device) image sensor with 7216(H) x 5412(V) photoactive pixels designed for a
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Original
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KAF-39000
KAF-39000-AA
MTD/PS-0881)
MTD/PS-0892)
CCD aerial application
4H0947
KAF-39000-AAA-DD-AA
KAF-39000-AA
1000X
Kodak Company
kodak ccd
KAF-39000-CA
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PDF
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Untitled
Abstract: No abstract text available
Text: MINIATURE ALUMINUM ELECTROLYTIC CAPACITORS FOR AUDIO RU DXGLR *5 1 &$3 0LQLDWXUH6WDQGDUG&DSDFLWRUVIRU$XGLR ROB 721(5(; ● ● Adopting the newly developed formation method and composite electrolytic paper for audio application has reduced distortion, achieving high-quality sound.
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Original
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120Hz
2013/2014E
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PDF
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s104 diode 87a
Abstract: s104 85a MELF DIODE color band brown bridge diode kbu 402 s104 diode sma ae SMC MARKING white marking 5 melf -diode glass diode AE 89A diode code ae 89A MARK sma diode general semiconductor
Text: New Product ESH2PB, ESH2PC & ESH2PD Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recovery times for high frequency
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Original
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J-STD-020,
AEC-Q101
2002/95/EC
2002/96/EC
DO-220AA
GBPC602RU
GBPC2508
02-Oct-09
s104 diode 87a
s104 85a
MELF DIODE color band brown
bridge diode kbu 402
s104 diode sma
ae SMC MARKING
white marking 5 melf -diode glass
diode AE 89A
diode code ae 89A
MARK sma diode general semiconductor
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PDF
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 185W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 10kii, Rg = 47kii _EL nr LT Pin Configuration WNs 1= B Q62702-C2280 Package 2=E o Marking Ordering Code BCR 185W
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OCR Scan
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10kii,
47kii)
Q62702-C2280
OT-323
300ns;
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PDF
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Q62702-S506
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSS 87 • SIPMOS - enhancement mode • Drain-source voltage Vbs = 240V • Continuous drain current l B = 0.29A • Drain-source on-resistance • Total power dissipation 8 ds «»> = 6.0Q PD - 1.0W Type Marking Ordering code for
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OCR Scan
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Q62702-S506
BSS87
Q62702-S506
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PDF
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Untitled
Abstract: No abstract text available
Text: Supertex inc. LNE150 Preliminary N-Channel Enhancement-Mode DMOS FETs Ordering Information b v dss/ R d S ON Order Number / Package I d (ON) Product marking for TO-236AB: b v dgs (max) (min) TO-236AB* Die NEE* 500V 1.0K& 3.0mA LNE150K1 LNE150ND where * = 2-week alpha date code
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OCR Scan
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LNE150
O-236AB:
O-236AB*
LNE150K1
LNE150ND
500nA
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PDF
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ERB83-006
Abstract: marking JSs s1nl R20 marking JE55
Text: ERB83-006 2A : Outline Drawings S C H O TTK Y BARRIER DIODE 1 Features • <svF : Marking Low Vi S 7 - 3 - K : It Super high speed switching. Color code : >iu<- High reliability by planer design. Abridged type name * v-Kt - î C a th o d e m o rk • £ ! & : Applications
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OCR Scan
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ERB83-006
EE3B77E
DDDL171
marking JSs
s1nl
R20 marking
JE55
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PDF
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ABE 721
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BF 720 BF 722 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 721/723 PNP
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OCR Scan
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Q62702-F1238
Q62702-F1306
OT-223
A23SbGS
ABE 721
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon High-Voltage Transistors BF 721 BF 723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN
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OCR Scan
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Q62702-F1239
Q62702-F1309
OT-223
flE35b05
D1E17DD
EHP0055Ã
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PDF
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B 722 P
Abstract: BB 722 DC DC BB 722
Text: SIEMENS NPN Silicon High-Voltage Transistors • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance BF 720 BF722 • Complementary types: BF 721/723 PNP
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OCR Scan
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BF722
Q62702-F1238
Q62702-F1306
OT-223
B 722 P
BB 722 DC DC
BB 722
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PDF
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MARKING BF
Abstract: No abstract text available
Text: SIEM ENS PNP Silicon High-Voltage Transistors BF 721 BF723 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Low capacitance • Complementary types: BF 720/722 NPN
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OCR Scan
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BF723
Q62702-F1239
Q62702-F1309
OT-223
EHP00555
MARKING BF
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PDF
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