Untitled
Abstract: No abstract text available
Text: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH050P03
R1120A
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RRH050
Abstract: RRH050P03
Text: RRH050P03 Datasheet Pch -30V -5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W (5) (6) SOP8 (7) lFeatures (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH050P03
R1120A
RRH050
RRH050P03
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Untitled
Abstract: No abstract text available
Text: RRH050P03 Pch -30V -5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -5A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH050P03
R1120A
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STN9926
Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N P CHANNEL dual POWER MOSFET Dual N-Channel MOSFET SOP8 marking code dual gate mos marking code 5A sop8 channel mosfet sop_8 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V MOSFET dual SOP-8 60V dual N-Channel trench mosfet
Text: STN9926 Dual N Channel Enhancement Mode MOSFET 5A DESCRIPTION The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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STN9926
STN9926
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4
N P CHANNEL dual POWER MOSFET
Dual N-Channel MOSFET SOP8
marking code dual gate mos
marking code 5A sop8
channel mosfet sop_8
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V
MOSFET dual SOP-8
60V dual N-Channel trench mosfet
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APE1809
Abstract: APE1809X B540
Text: Advanced Power Electronics Corp. APE1809 PWM Control 5A Step-Down Converter GENERAL DESCRIPTION APE1809 consists of step-down switching regulator with PWM control. These devise include a reference voltage source, oscillation circuit, error amplifier, internal
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APE1809
APE1809
1809D
APE1809X
B540
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4953ss
Abstract: MTDP4953Q8 sop8 Package dimension sop-8 582
Text: CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953Q8 Description The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
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C402Q8
MTDP4953Q8
MTDP4953Q8
UL94V-0
4953ss
sop8 Package dimension
sop-8 582
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MIC38HC4X
Abstract: specification of TL 2N 2222 A APW power supply
Text: APW38HC42A/3A/4A/5A CMOS Current-Mode PWM Voltage Controller Features • • • General Description Ultralow start-up current 25µA typical The APW38HC4XA family are fixed frequency, high performance, current-mode PWM controller with 1.2 A drive current capability. Undervoltage lockout circuitry allows the APW38HC42A and APW38HC44A
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APW38HC42A/3A/4A/5A
APW38HC4XA
APW38HC42A
APW38HC44A
APW38HC43A
APW38HC45A
MIC38HC4X
specification of TL 2N 2222 A
APW power supply
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UL94V0
Abstract: No abstract text available
Text: CYStech Electronics Corp. Spec. No. : C421Q8 Issued Date : 2007.10.12 Revised Date : Page No. : 1/5 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4955Q8 Description The MTDP4955Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
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C421Q8
MTDP4955Q8
MTDP4955Q8
UL94V-0
UL94V0
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9971
Abstract: MTDN9971Q8
Text: CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device
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C415Q8
MTDN9971Q8
MTDN9971Q8
UL94V-0
9971
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APW384XA
Abstract: MIC38HC4X
Text: APW38HC42A/3A/4A/5A CMOS Current-Mode PWM Voltage Controller Features • • • General Description Ultralow start-up current 25µA typical The APW38HC4XA family are fixed frequency, high performance, current-mode PWM controller with 1.2 A drive current capability. Undervoltage lockout circuitry allows the APW38HC42A and APW38HC44A
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APW38HC42A/3A/4A/5A
APW38HC4XA
APW38HC42A
APW38HC44A
APW38HC43A
APW38HC45A
APW384XA
MIC38HC4X
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Untitled
Abstract: No abstract text available
Text: MA4002S10000000 N-Ch 40V Fast Switching MOSFETs General Description Product Summery The MA4002S100 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter
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MA4002S10000000
MA4002S100
D061009
3000pcs
6000pcs
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apm9946
Abstract: apm*9946 APM9946K 27BSC STD-020C
Text: APM9946K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • 60V/5A, RDS ON =38mΩ(typ.) @ VGS = 10V RDS(ON) =55mΩ(typ.) @ VGS = 4.5V • • • Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8 Lead Free Available (RoHS Compliant)
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APM9946K
APM9946
APM9946
apm*9946
APM9946K
27BSC
STD-020C
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4953BDYSS
Abstract: 4953b TF23 MTDP4953BDYQ8
Text: CYStech Electronics Corp. Spec. No. : C401Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/6 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
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C401Q8
MTDP4953BDYQ8
MTDP4953BDYQ8
UL94V-0
4953BDYSS
4953b
TF23
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AO4604
Abstract: 4604 inverter AO4604 SO8 4604 ALPHA SEMICONDUCTOR 4604
Text: Nov 2002 AO4604 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4604 uses advanced trench technology MOSFETs to provide excellent RDS ON and low gate charge. The complementary MOSFETs may be used in power inverters, and other applications.
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AO4604
AO4604
4604 inverter
AO4604 SO8
4604
ALPHA SEMICONDUCTOR 4604
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B45A06
Abstract: MOSFET 30v sop-8 MTB45A06Q8 MOSFET dual SOP-8
Text: CYStech Electronics Corp. Spec. No. : C713Q8 Issued Date : 2009.06.02 Revised Date : Page No. : 1/8 Dual N-Channel Logic Level Enhancement Mode Power MOSFET MTB45A06Q8 BVDSS 60V ID 6A RDSON MAX. 45mΩ Description The MTB45A06Q8 provides the designer with the best combination of fast switching, ruggedized device
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C713Q8
MTB45A06Q8
MTB45A06Q8
UL94V-0
B45A06
MOSFET 30v sop-8
MOSFET dual SOP-8
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AF6930N
Abstract: No abstract text available
Text: AF6930N N-Channel Enhancement Mode Power MOSFET Features General Description - DC-DC Application - Surface Mount Package - Dual N-channel Device The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and
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AF6930N
6930N
015x45
AF6930N
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apm9946
Abstract: apm*9946 APM9946K C38M A102 A108 B102 JESD-22
Text: APM9946K Dual N-Channel Enhancement Mode MOSFET Pin Description Features • D1 D1 D2 D2 60V/5A, RDS ON =38mΩ(Typ.) @ VGS = 10V RDS(ON) =55mΩ(Typ.) @ VGS = 4.5V • • • S1 G1 S2 G2 Super High Dense Cell Design Reliable and Rugged Top View of SOP − 8
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APM9946K
APM9946
JESD-22,
apm9946
apm*9946
APM9946K
C38M
A102
A108
B102
JESD-22
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JESD22JESD22
Abstract: No abstract text available
Text: APM6010K N-Channel Enhancement Mode MOSFET Features • Pin Configuration D D 60V/5A, D D RDS ON =65mΩ (max.) @ VGS=10V RDS(ON)=90mΩ (max.) @ VGS=4.5V • • • S S Super High Dense Cell Design S G Reliable and Rugged Top View of SOP-8 Lead Free and Green Devices Available
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APM6010K
APM6010
JESD-22,
JESD22JESD22
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8958C
Abstract: AF8958C N and P MOSFET
Text: AF8958C P & N-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Low side high current DC-DC Converter
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AF8958C
015x45
8958C
AF8958C
N and P MOSFET
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Untitled
Abstract: No abstract text available
Text: RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W lFeatures SOP8 (7) (5) (6) (8) (4) (3) (1) (2) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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R1120A
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APM4552
Abstract: APM45 apm455
Text: APM4552K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • D1 D1 N-Channel 30V/7A, D2 D2 RDS(ON) = 23mΩ(typ.) @ VGS = 10V RDS(ON) = 34mΩ(typ.) @ VGS = 4.5V • S1 G1 P-Channel -30V/-5A, S2 G2 RDS(ON) = 46mΩ(typ.) @ VGS =-10V
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APM4552K
-30V/-5A,
APM4552
Operating0-2000
APM45
apm455
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Untitled
Abstract: No abstract text available
Text: RRH100P03 Datasheet Pch -30V -10A Power MOSFET lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W (5) (6) SOP8 (7) lFeatures (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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RRH100P03
R1120A
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apm4550
Abstract: APM4550K STD-020C
Text: APM4550K Dual Enhancement Mode MOSFET N- and P-Channel Pin Description Features • N-Channel 30V/7A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel Top View of SOP − 8 -30V/-5A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V
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APM4550K
-30V/-5A,
MIL-STD-883D-2003
MIL-STD-883D-1005
JESD-22-B
MIL-STD-883D-1011
MIL-STD-883D-3015
100mA
apm4550
APM4550K
STD-020C
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Untitled
Abstract: No abstract text available
Text: RRH100P03 Pch -30V -10A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 12.6mW ID -10A PD 2.0W lFeatures (5) (6) SOP8 (7) (8) (4) (3) (2) (1) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).
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R1120A
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