Untitled
Abstract: No abstract text available
Text: POWER TYPE RESISTORS Metal Glaze ANTI SURGE RCR POWER TYPE RESISTORS STRUCTURE 1 2 3 4 5 6 7 Identification produCt code Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking marking* coating color
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RCR16
RCR25,
RCR50
RCR50EN
RCR60
FORMING56Mâ
D-25578
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MARKING 68W SOT-23
Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06
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25-04W
25-05W
25-06W
25-07W
3904S
846AT
846BW
846BT
847AT
847BW
MARKING 68W SOT-23
marking code 67a sot23 6
sot143 Marking code 5B
baw 92
SOT-363 marking CF
54 fk SOT-23
BAT 545
SOT-363 marking BF
sot-89 MARKING CODE BN
MARKING CODE DH SOT 23
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transistor Bc 540
Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W
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0-02V
0-03W
3-02V
3-02W
3-03W
3-04W
3-05W
3-06W
4-02V
4-02W
transistor Bc 540
68W SOT
marking codes transistors a1 sot-23
MARKING 68W SOT-23
sot 223 marking code AH
dk marking code sot-89
MARKING CODE DH SOT 23
sot-89 MARKING CODE BN
1Bs sot-23
MY sot-89
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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C2592
Abstract: Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 marking code AES
Text: BCP 51M . BCP 53M PNP Silicon AF Transistor 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 54M.BCP 56M NPN 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
EHP00262
EHP00260
EHP00263
EHP00264
C2592
Q62702-C2593
Q62702-C2594
SCT-595
marking code AES
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Q62702-C2606
Abstract: c2595 Q62702-C2607 Q62702-C2595 SCT-595 MARKING CODE 56m
Text: BCP 54M . BCP 56M NPN Silicon AF Transistors 4 • For AF driver and output stages 5 • High collector current • Low collector-emitter saturation voltage 3 • Complementary types: BCP 51M.BCP 53M PNP 2 1 VPW05980 Type Marking Ordering Code Pin Configuration
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VPW05980
Q62702-C2595
Q62702-C2606
Q62702-C2607
SCT-595
EHP00269
EHP00267
EHP00270
EHP00271
Q62702-C2606
c2595
Q62702-C2607
SCT-595
MARKING CODE 56m
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RcR RESISTORS
Abstract: No abstract text available
Text: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW METAL GLAZE STRUCTURE 1 2 3 4 5 6 7 Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS ANTI SURGE RCR IDENTIFICATION PRODUCT CODE
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RCR16
RCR25,
RCR50
RCR50
RCR60
R100k:
D-25578
RcR RESISTORS
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RcR RESISTORS
Abstract: No abstract text available
Text: POWER TYPE RESISTORS TECHNOLOGY OF TOMORROW METAL GLAZE STRUCTURE 1 2 3 4 5 6 7 Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS ANTI SURGE RCR IDENTIFICATION PRODUCT CODE
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Original
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PDF
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RCR16
RCR25,
RCR50
RCR50
RCR60
R100k:
D-25578
RcR RESISTORS
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RcR RESISTORS
Abstract: RCR Resistor vde-reg-nr E159326 CSA-C22 RCR50 RCR60 UL1676
Text: POWER TYPE RESISTORS Metal Glaze ANTI SURGE RCR STRUCTURE Ceramic core Trimmed metal glaze Steel cap Cu, Sn plated Lead wire Welding joint Flame retardant coating Marking POWER TYPE RESISTORS 1 2 3 4 5 6 7 Identification produCt code coating color RCR16
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RCR16
RCR25,
RCR50
RCR60
R100k:
D-25578
RcR RESISTORS
RCR Resistor
vde-reg-nr
E159326
CSA-C22
RCR50
RCR60
UL1676
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Q62702-A3473
Abstract: SCT-595
Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595
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VPW05980
Q62702-A3473
SCT-595
EHP00821
EHP00819
EHP00820
EHP00815
Jun-08-1998
Q62702-A3473
SCT-595
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Q62702-A3474
Abstract: SCT-595
Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595
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VPW05980
Q62702-A3474
SCT-595
EHP00852
EHP00850
EHP00851
EHP00846
Q62702-A3474
SCT-595
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marking code 43a
Abstract: No abstract text available
Text: DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 36mΩ @VGS = -10V • 56mΩ @VGS = -4.5V Low Input/Output Leakage
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DMP3056LDM
AEC-Q101
OT-26
OT-26,
J-STD-020A
MIL-STD-202,
DS31449
marking code 43a
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Untitled
Abstract: No abstract text available
Text: DMP3056LDM P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • Mechanical Data • • • • Low RDS ON : • 36mΩ @VGS = -10V • 56mΩ @VGS = -4.5V Low Input/Output Leakage
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DMP3056LDM
AEC-Q101
OT-26
OT-26,
J-STD-020D
MIL-STD-202,
DS31449
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Untitled
Abstract: No abstract text available
Text: DMP2038USS 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS NEW PRODUCT -20V Features and Benefits RDS(ON) max ID max TA = +25°C • Low On-Resistance • Low Gate Threshold Voltage 38mΩ @ VGS = -4.5V -6.5A • Low Input Capacitance 56mΩ @ VGS = -2.5V
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DMP2038USS
AEC-Q101
DS36919
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Untitled
Abstract: No abstract text available
Text: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package -6.2A 36mΩ @ VGS = -4.5V -20V 56mΩ @ VGS = -2.5V • • • • • • • ID TA = +25°C U-DFN2020-6 Type E -5.0A -4.2A 75mΩ @ VGS = -1.8V 0.6mm profile – ideal for low profile applications
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DMP2066UFDE
U-DFN2020-6
AEC-Q101
DS35496
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DMP2066UFDE
Abstract: No abstract text available
Text: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits -20V • • • • • • • ID RDS(on) max TA = 25°C 36mΩ @ VGS = -4.5V -6.2A 56mΩ @ VGS = -2.5V -5.0A 75mΩ @ VGS = -1.8V -4.2A 0.6mm profile – ideal for low profile applications
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DMP2066UFDE
AEC-Q101
DS35496
DMP2066UFDE
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Untitled
Abstract: No abstract text available
Text: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits -20V • • • • • • ID RDS(on) max TA = 25°C 36mΩ @ VGS = -4.5V -6.2A 56mΩ @ VGS = -2.5V -5.0A 75mΩ @ VGS = -1.8V -4.2A Low On-Resistance Low Input Capacitance Fast Switching Speed
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DMP2066UFDE
AEC-Q101
DS35496
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Untitled
Abstract: No abstract text available
Text: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance
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DMN2065UW
AEC-Q101
DS35554
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Untitled
Abstract: No abstract text available
Text: DMP2066UFDE 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) Package -6.2A 36mΩ @ VGS = -4.5V -20V 56mΩ @ VGS = -2.5V • • • • • • • ID TA = +25°C U-DFN2020-6 Type E -5.0A -4.2A 75mΩ @ VGS = -1.8V 0.6mm profile – ideal for low profile applications
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Original
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PDF
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DMP2066UFDE
U-DFN2020-6
AEC-Q101
DS35496
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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OCR Scan
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PDF
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP it UJ CO il Q62702-A3473 O s1G CM SMBTA 06M II Marking Ordering Code Pin Configuration CÛ Type Package
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OCR Scan
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PDF
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Q62702-A3473
SCT-595
300ns;
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 1= B 2=C 3= E Package 4 n.c. 5 = C
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OCR Scan
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PDF
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Q62702-A3474
SCT-595
EHP00852
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 06M NPN Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 56M PNP II LD CO Q62702-A3473 II s1G o SMBTA 06M Pin Configuration CM Ordering Code II Marking 0Û Type Package
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OCR Scan
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PDF
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Q62702-A3473
SCT-595
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Untitled
Abstract: No abstract text available
Text: SIEMENS SMBTA 56M PNP Silicon AF Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 06M NPN h HI CO Q62702-A3474 o s2G II CM SMBTA 56M Pin C onfiguration CO II Marking O rdering Code T— Type
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OCR Scan
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PDF
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Q62702-A3474
SCT-595
300ns;
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