B39192-B7758-E311
Abstract: B7758
Text: 2in1 RF Filters for Cellular Phones The following products presented in this data sheet are being withdrawn. Ordering Code Substitute Product B39192B7758E311 B39192B9014E910 Date of Withdrawal 2007-12-01 Deadline Last Orders 2007-02-28 Last Shipments 2007-05-31
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B39192B7758E311
B39192B9014E910
B7758
B39192-B7758-E311
B7758
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B4236
Abstract: No abstract text available
Text: SAW Components SAW Rx 2in1 filter Series/type: Ordering code: B4236 B39811B4236H410 Date: Version: July 06, 2007 2.0 EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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B4236
B39811B4236H410
B4236
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EPCOS ec 90 06 0
Abstract: No abstract text available
Text: SAW Components SAW Rx 2in1 filter Series/type: Ordering code: B4236 B39811B4236H410 Date: Version: July 06, 2007 2.0 EPCOS AG 2007. Reproduction, publication and dissemination of this data sheet, enclosures hereto and the information contained therein without EPCOS’ prior express consent is prohibited.
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B4236
B39811B4236H410
EPCOS ec 90 06 0
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HAL628
Abstract: 004-G intermetall 638UA
Text: HAL628, HAL638 Hall Effect Sensor 1C in CMOS technology ADVANCE INFORMATION Marking Code Temperature Range Type Common Features: - switching offset compensation - operates from 4.5 V to 24 V supply voltage HAL 628UA, HAL628S - overvoltage and reverse-voltage protection
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HAL628,
HAL638
628UA,
HAL628S
638UA,
HAL638S
4083ion
HAL628
004-G
intermetall
638UA
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP181R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA • f j = 8GHz F = 1.45dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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BFP181R
900MHz
Q62702-F1685
OT-143R
235fc
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bf544
Abstract: siemens fet to92 700M
Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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Q62702-F1231
eht07043
eht07044
EHM07002
fl23SbDS
0Qbb777
bf544
siemens fet to92
700M
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marking GG
Abstract: marking code 604 SOT23
Text: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package
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OT-23
marking GG
marking code 604 SOT23
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marking E7B
Abstract: No abstract text available
Text: SIEMENS BAW56 Silicon Switching Diode Array • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel B A W 56 A1s Q62702-A688 Pin Configuration Package1) 3 SOT-23 EHMHW Maximum Ratings per Diode Parameter Symbol
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BAW56
Q62702-A688
OT-23
02BSb05
23StOS
01S048M
235b05
marking E7B
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TRANSISTOR k 1254
Abstract: No abstract text available
Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E
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Q62702-F1225
OT-23
fl535b05
G121707
TRANSISTOR k 1254
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2907a
Abstract: 2907 A2907 a 2907 BT2907A NPN transistors sot-23 26
Text: SIEMENS PNP Silicon Switching Transistors SMBT 2907 SMBT 2907 A • High DC current gain: 0.1 mA to 500 mA • Low collector-emitter saturation voltage • Complementary types: SMBT 2222, SMBT 2222 A NPN Type Marking Ordering Code (tape and reel) Pin Configuration
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Q68000-A6501
Q68000-A6474
OT-23
EHP0075I
2907a
2907
A2907
a 2907
BT2907A
NPN transistors sot-23 26
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1s211
Abstract: 2I k
Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1594
OT-143R
900MHz
1S211
2I k
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Untitled
Abstract: No abstract text available
Text: HAL 800 ADVANCE INFORMATION Contents Page Section Title 3 3 1. 1.1. Introduction Major Applications 3 1.2. Features 4 1.3. Marking Code 4 1.4. Operating Junction Temperature Range TJ 4 1.5. Hall Sensor Package Codes 4 1.6. Solderability 4 4 2. 2.1. Functional Description
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ac 0624 transistor 17-33
Abstract: uc 1604 0166 415 04 1 060 transistor cq 529
Text: BFP 193 NPN Silicon RF Transistor • For low-noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers. • f j = 8 GHz. F = 1.2 dB at 800 MHz. ESD : Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code
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F1217
OT-143
ac 0624 transistor 17-33
uc 1604
0166 415 04 1 060
transistor cq 529
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1382
OT-143
235bQ5
BFP183
900MHz
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistors BF 254 BF 255 • For AM and FM stages Type Marking Ordering Code BF 254 BF 255 - Q62702-F201 Q62702-F202 Pin Configuration 1 2 3 C E Package1 B TO-92 Maximum Ratings Parameter Symbol Collector-emitter voltage Collector-base voltage
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Q62702-F201
Q62702-F202
35bQS
00LL753
fl235b05
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BT 815 transistor
Abstract: BT 816 transistor
Text: 3EE D • ÔSBbBHQ 0017S3? 4 SMBT3906 PNP Silicon Switching Transistor SIEMENS/ SPCL-. SEMICONDS • • • ISIP r-3'7- i r High D C current gain: 0.1 to 100 mA Low collector-emitter saturation voltage Complementary type: S M B T 3904 NPN Type Marking Ordering code
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0017S3?
SMBT3906
Q68000-A4341
Q68000-A4417
23b320
BT 815 transistor
BT 816 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diodes BAS 79 A . BAS 79 D • Switching applications • High breakdown voltage • Common cathode Type BAS BAS BAS BAS 79 79 79 79 A B C D Marking Ordering Code tape and reel BAS BAS BAS BAS Q62702-A914 Q62702-A915 Q62702-A916
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Q62702-A914
Q62702-A915
Q62702-A916
Q62702-A917
OT-223
D1S03D5
fl53St
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d 998 transistor circuit
Abstract: No abstract text available
Text: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998
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Q62702-F1129
T-143
M27ol
BB5151
J8B515
d 998 transistor circuit
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ERB83-004
Abstract: No abstract text available
Text: ERB83-004 2A • Outline Drawing scHOTTKY b a r r i e r d io d e ■ Marking ■ Features • Lo w V f • Super high speed switching Color code : White • High reliability by planer design CD M CO u CD -O ¥ Abridged type name ■ Applications Voltage class
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ERB83-004
do-41
500ns,
ERB83-004
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SL106D
Abstract: SL210ND SL110AB AC125V SLN210K SL120D SL103A AC250V6A SL120A SLN210K-9
Text: SL Miniature Rocker Switches I Num bering- SL 1 20 A T Current S e r ie s c o d e 1-; N u m b e r o f poles m m m ± Code C ircuit fu n ction , A K ON - O FF D N ON - ON J W l- p o le S L 103* 106 \ Switching \ v function Type m & m T a m if i'b M T Viewed fro m type No. marking side
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SL103*
SL103A
SL106A
SL106D
AC125V
SLN210K
AC1000V
DC500V)
150kQ
SL210ND
SL110AB
SL120D
AC250V6A
SL120A
SLN210K-9
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transistor bf 271
Abstract: CFK30 marking code CFK sot-23 MARKING CODE 0s transistor g23 mosfet 3704 transistor bc238c
Text: filC D TELEFUNKEN ELECTRONIC • fiTSGDTb OGOSMll 2 ■ ALCG T-3/-2i> M electronic CFK30 Creative Technologies N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; in wireless telephone, broadcast sets, cabel TV and equipments with
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CFK30
569-GS
transistor bf 271
CFK30
marking code CFK
sot-23 MARKING CODE 0s
transistor g23 mosfet
3704 transistor
bc238c
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MURATA ERIE
Abstract: No abstract text available
Text: MURATA ERIE NORTH AMERICA blE D • bBTaflbS ODG4b37 153 ■ MENA A-2I-& MICROMINIATURE RVS, RVG 0707 1/3 WATT CERMET FEATURES: APPLICATIONS: • Excellent humidity characteristics • Dust-resistant construction • Non-combustible design The Murata Erie Model RVS, R VG 0707 is
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ODG4b37
0707H
0707V100
0707H100
0707V101
MURATA ERIE
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KF-38G
Abstract: KF-38P8-13P0301 KF-26G-12P0200 KF-38 012Q KF26 KF-260-13P0301 KF-38E
Text: :2i<y[EERa KF-26/-38, -26MQ/-38MQ Series Quartz Crystals f0: 25.0 to 155 kHz Tuning Fork Type Crystals FEATURES HOWTO ORDER 1 Two package sizes 2) Tuning fork type crystal 3) Medical grade available please contact factory) 4) Frequency range: KF-38: 25 to 100 kHz
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KF-26/-38,
-26MQ/-38MQ
KF-38:
KF-26:
KF-38G
-12P5
KF-38G
20ppm,
300ppm,
KF-38P8-13P0301
KF-26G-12P0200
KF-38
012Q
KF26
KF-260-13P0301
KF-38E
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Untitled
Abstract: No abstract text available
Text: lowprofile NCED CMOS r 2i l COMPATIBl VOLTAGE VARIABLE FAST RECOVERY GENERATOR # T^L compatible input and outputs # Pulse widths stable and precise # Pulse width voltage trimmable # High output duty cycles # 14-pin DIP package .240 high # Available in pulse widths from 10 to 500ns
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14-pin
500ns
500ns.
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