MARKING CODE 2A SOT Search Results

3906

Abstract: marking 2A transistor 3906 transistor marking code 7C
Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings

3906

Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
Contextual Info: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings

Contextual Info: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin ( tonfigu ration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings

SSN2N7002A

Contextual Info: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A

marking code vishay SILICONIX sot-23

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2302DS 2A

Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

si2302ds

Abstract: Si2302ADS Si2302DS 2A
Contextual Info: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si2302ADS-T1

Abstract: Si2302ADS Si2302DS
Contextual Info: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

TSB772S

Abstract: TSD772SCT TSD772SCY TSD882S
Contextual Info: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)

marking 43 sot-89

Abstract: "PNP Transistor" O A B C sot-89 TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89 tsd882
Contextual Info: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

DMN3210

Abstract: J-STD-020A
Contextual Info: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B

Contextual Info: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data

MMBT3906

Abstract: marking C10 transistor c10 2A marking MMBT3906 "Small Signal Diode" c10 g sot-23 free transistor
Contextual Info: MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

MARKING P1 TRANSISTOR

Abstract: MMBT3906 transistor marking 2a 2A marking transistor transistor MMBT3906 marking code 2A sot-23 2A transistor
Contextual Info: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

Contextual Info: MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate

2A marking MMBT3906

Abstract: DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V
Contextual Info: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate

HM200

Abstract: HM1300
Contextual Info: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2002.08.15 Page No. : 1/3 MICROELECTRONICS CORP. HM1300 SILICON PNP EPITAXIAL TYPE Description • Strobo Flash Applications • Medium Power Amplifier Applications Features SOT-89 • High DC Current Ogin and Excellanr hFE Linearity

Marking P35

Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM up to -5A Peak Pulse Current 

P35 marking code transistor

Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
Contextual Info: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A

Contextual Info: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100

marking code 2A

Abstract: MARKING 2A sot marking code 2A MARKING CODE 2A SOT
Contextual Info: TESDG5V0A 5V, 2-Channels ESD Protection Array Small Signal Diode SOT-563 A F E B Features —IEC61000-4-2 rating. ±16KV Air , ±8KV(Contact) G —Protect two I/O lines and power line C —Low leakage, Low Operating and Clamping Voltage D —Low capacitance (<0.9pF) for high-speed interfaces