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    MARKING CODE 2A SOT Search Results

    MARKING CODE 2A SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE 2A SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3906

    Abstract: 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906
    Text: PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA ● Low collector-emitter saturation voltage ● Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    Original     		PDF Q68000-A8397 OT-89 3906 3906 PNP pnp 3906 transistor 3906 transistor pnp 3906 semiconductor 3906 transistor 3906 data sheet transistor c 3906 2A 3906

    SSN2N7002A

    Abstract: No abstract text available
    Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A


    Original     		PDF SSN2N7002A OT-323 OT-323 SSN2N7002A

    marking code vishay SILICONIX sot-23

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS 08-Apr-05 marking code vishay SILICONIX sot-23

    Si2302DS 2A

    Abstract: No abstract text available
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-32044--Rev. 13-Oct-03 Si2302DS 2A

    si2302ds

    Abstract: Si2302ADS Si2302DS 2A
    Text: Si2302ADS New Product Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2302ADS O-236 OT-23) Si2302DS S-20617--Rev. 29-Apr-02 Si2302DS 2A

    Si2302ADS-T1

    Abstract: Si2302ADS Si2302DS
    Text: Si2302ADS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS V 20 rDS(on) (Ω) ID (A) 0.060 @ VGS = 4.5 V 2.4 0.115 @ VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 S 2 3 D Ordering Information: Si2302ADS-T1 Top View Si2302DS (2A)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si2302ADS O-236 OT-23) Si2302ADS-T1 Si2302DS S-41772--Rev. 20-Sep-04

    TSB772S

    Abstract: TSD772SCT TSD772SCY TSD882S
    Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)


    Original     		PDF TSB772S OT-89 200mA TSD882S TSD772SCT TSD772SCY TSB772S TSD882S

    marking 43 sot-89

    Abstract: "PNP Transistor" O A B C sot-89 TSB772S TSD772SCT TSD772SCY TSD882S PNP TRANSISTOR SOT89 tsd882
    Text: TSB772S Low Vcesat PNP Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base SOT-89 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -50V BVCEO -30V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.25 @ IC / IB = 2A / 200mA (Typ.)


    Original     		PDF TSB772S OT-89 200mA TSD882S TSD772SCT TSD772SCY marking 43 sot-89 "PNP Transistor" O A B C sot-89 TSB772S TSD882S PNP TRANSISTOR SOT89 tsd882

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR UNDER DEVELOPMENT Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, OT-23 3000/Tape com/datasheets/ap02007 DS30388

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    DMN3210

    Abstract: J-STD-020A
    Text: DMN3210 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT SPICE MODELS: DMN3210 Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DS30388 DMN3210 J-STD-020A

    Untitled

    Abstract: No abstract text available
    Text: DMN3210 NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low Gate Threshold Voltage Ultra Low On-Resistance Low Input/Output Capacitance Low Input/Output Leakage Fast Switching Speed SOT-23 A D B C G TOP VIEW S Mechanical Data


    Original     		PDF DMN3210 OT-23 OT-23, J-STD-020A MIL-STD-202, DMN3210-7 OT-23 3000/Tape com/datasheets/ap02007 DS30388

    RF transistor marking IN SOT-89

    Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
    Text: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150


    Original     		PDF TSB1424 OT-89 OT-23 -100mA TSD2150 TSB1424CY TSB1424CX RF transistor marking IN SOT-89 RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89

    MMBT3906

    Abstract: marking C10 transistor c10 2A marking MMBT3906 "Small Signal Diode" c10 g sot-23 free transistor
    Text: MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3906 350mW, OT-23 MIL-STD-202, MMBT3906 marking C10 transistor c10 2A marking MMBT3906 "Small Signal Diode" c10 g sot-23 free transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBT3906 350mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E ­Epitaxial planar die construction ­Surface device type mounting C ­Moisture sensitivity level 1 G D ­Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3906 350mW, OT-23 MIL-STD-202,

    2A marking MMBT3906

    Abstract: DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V
    Text: MMBT3906 300mW, PNP Small Signal Transistor Small Signal Diode SOT-23 3 Collector A 1 Base F 2 Emitter B Features E —Epitaxial planar die construction —Surface device type mounting C —Moisture sensitivity level 1 G D —Matte Tin Sn lead finish with Nickel(Ni) underplate


    Original     		PDF MMBT3906 300mW, OT-23 MIL-STD-202, 2A marking MMBT3906 DIODE MARKING CODE B10 MMBT3906 2a MMBT3906 marking code 2a MARKING P1 TRANSISTOR SOT-23 2A MMBT3906 on SOT-23 marking 2a Diode SOT-23 marking 3V

    HM200

    Abstract: HM1300
    Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2002.08.15 Page No. : 1/3 MICROELECTRONICS CORP. HM1300 SILICON PNP EPITAXIAL TYPE Description • Strobo Flash Applications • Medium Power Amplifier Applications Features SOT-89 • High DC Current Ogin and Excellanr hFE Linearity


    Original     		PDF HM200202 HM1300 OT-89 -50mA) HM200 HM1300

    Marking P35

    Abstract: transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35
    Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current  Case Material: Molded Plastic, “Green” Molding Compound  ICM up to -5A Peak Pulse Current 


    Original     		PDF DPLS350Y -180mV AEC-Q101 J-STD-020 MIL-STD-202, DS31149 Marking P35 transistor p35 Marking P35 sot89 SOT89 transistor marking 5A DPLS350Y Diodes P35

    P35 marking code transistor

    Abstract: 4600 8 pin ic Marking P35 sot89 marking p35
    Text: DPLS350Y 50V PNP SWITCHING TRANSISTOR IN SOT89 Features Mechanical Data • • • • • • • • BVCEO > -50V Max Continuous Current IC = -3A High Gain Holds up hFE ≥ 200 @ IC = -100mA Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DPLS350Y -100mA AEC-Q101 J-STD-020 MILSTD-202, DPLS350Y-13 DS31149 P35 marking code transistor 4600 8 pin ic Marking P35 sot89 marking p35

    Untitled

    Abstract: No abstract text available
    Text: DPLS350Y 50V PNP LOW SATURATION POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -50V   IC = -3A High Continuous Collector Current   ICM up to -5A Peak Pulse Current    2W Power Dissipation Low Saturation Voltage VCE sat < -180mV @ 1A


    Original     		PDF DPLS350Y -180mV AEC-Q101 J-STD-020 DS31149

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated Green ZDT6753 100V COMPLEMENTARY MEDIUM POWER TRANSISTOR IN SM-8 Features Mechanical Data • • Case: SM-8 8 LEAD SOT223 • Case Material: Molded Plastic, “Green” Molding Compound. • NPN Transistor • BVCEO > 100


    Original     		PDF ZDT6753 OT223) 300mV J-STD-020 -100V -300mV MIL-STD-202, DS33209

    marking code 2A

    Abstract: MARKING 2A sot marking code 2A MARKING CODE 2A SOT
    Text: TESDG5V0A 5V, 2-Channels ESD Protection Array Small Signal Diode SOT-563 A F E B Features —IEC61000-4-2 rating. ±16KV Air , ±8KV(Contact) G —Protect two I/O lines and power line C —Low leakage, Low Operating and Clamping Voltage D —Low capacitance (<0.9pF) for high-speed interfaces


    Original     		PDF OT-563 IEC61000-4-2 OT-563 MIL-STD-202, marking code 2A MARKING 2A sot marking code 2A MARKING CODE 2A SOT

    3906

    Abstract: marking 2A transistor 3906 transistor marking code 7C
    Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8397 OT-89 3906 marking 2A transistor 3906 transistor marking code 7C

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon Switching Transistor SXT 3906 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin ( tonfigu ration 1 2 3 Package1) SXT 3906 2A Q68000-A8397 B SOT-89 C E Maximum Ratings


    OCR Scan     		PDF Q68000-A8397 OT-89 0535bQ5 01EBb3D EHP00916 235bD5 D122b31 23SLD5