MARKING CODE 1N40 Search Results

C5V6 ph

Abstract: C18 ph PH C5V1 philips diode PH 33D C8V2 PH C10 PH c4v7 ph c5v1ph c3v9ph C33PH
Contextual Info: MARKING CODES contents page Type number to marking code cross reference 2 Marking code to type number cross reference 21 Philips Semiconductors Small-signal and Medium-power Diodes Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE TYPE NUMBER

philips diode PH 33D

Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817

philips diode PH 33D

Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Contextual Info: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)

PH 33D

Abstract: PH 33G BYW95C PH BYM26C PH BYV26E PH BYW96E PH BYV96E ph 33D-PH 33d ph V10-40
Contextual Info: DISCRETE SEMICONDUCTORS Marking codes Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Marking codes TYPE NUMBER TO MARKING CODE MARKING CODE PACKAGE BY558 BY558 PH SOD115 SOD57 BY578 BY578 PH SOD115 SOD57 BY584 orange SOD61A 1N4004 PH SOD57 BY614

GENERAL SEMICONDUCTOR MARKING mJ SMA ED

Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Contextual Info: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)

Contextual Info: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: 1N4001SG - 1N4007SG CREAT BY ART 1.0 AMP. Glass Passivated Rectifiers A-405 Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads Green compound with suffix "G" on packing

Contextual Info: 1N4001 - 1N4007 CREAR BY ART 1.0 AMPS. Silicon Rectifiers DO-41 Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data

Contextual Info: 1N4001G - 1N4007G CREAT BY ART 1.0 AMP. Glass Passivated Rectifiers DO-41 Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing

Contextual Info: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and

1n4007s

Abstract: in 4007s
Contextual Info: 1N4001S thru 1N4007S Taiwan Semiconductor CREAT BY ART Silicon Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC

Contextual Info: 1N4001 thru 1N4007 Taiwan Semiconductor CREAT BY ART FEATURES Silicon Rectifiers - High efficiency, Low VF - High current capability - High reliability - Low power loss - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition

Contextual Info: 1N4001SG thru 1N4007SG Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - High efficiency, low VF - High current capability - High reliability - High surge current capability - Low power loss - φ0.6mm leads - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: 1N4001G thru 1N4007G Taiwan Semiconductor CREAT BY ART Glass Passivated Rectifiers FEATURES - Glass passivated chip junction - High current capability, Low VF - High reliability - High surge current capability - Low power loss, high efficiency - Compliant to RoHS Directive 2011/65/EU and

1N4001G

Abstract: 1N4007G 4002G
Contextual Info: TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 A M P G lass P assivated R ectifiers RoHS DO-41 COMPLIANCE -E Ü - .1 0 7 2 7 .0 8 0 f2 0) 1.0 (2S.4) MIN UIA Features Glass passivated chip junction High current capability, Low VF. <• High reliability & Current capability.

1N4007SG

Abstract: 1N4001SG A-405 1N4004SG
Contextual Info: is 1N4001SG - 1N4007SG TAIWAN SEMICONDUCTOR 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE -SBFeatures -v" -Y - -Y - Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability

1N4007SG

Abstract: 1N4001SG
Contextual Info: 1N4001SG - 1N4007SG CREAT BY ART Pb 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads

1N4001G

Abstract: 1N4007G 4002G 4005G 4007G
Contextual Info: IM TAIWAN SEMICONDUCTOR 1N4001G - 1N4007G 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features -$• -$• -$■ Glass passivated chip junction. High current capability, Low VF Current capability High reliability High surge current capability

Contextual Info: 1N4001SG - 1N4007SG Pb 1.0 AMP. Glass Passivated Rectifiers A-405 RoHS COMPLIANCE Features Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability Low power loss 0.6mm leads Green compound with suffix "G" on packing

1N4001G

Abstract: 1N4007G 4002G 4005G
Contextual Info: 1N4001G - 1N4007G CREAT BY ART Pb 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing

Contextual Info: 1N4001G - 1N4007G CREAT BY ART Pb 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing

Contextual Info: 1N4001G - 1N4007G Pb 1.0 AMP. Glass Passivated Rectifiers DO-41 RoHS COMPLIANCE Features Glass passivated chip junction High current capability, Low VF High reliability High surge current capability Low power loss, high efficiency Green compound with suffix "G" on packing

in 4007s

Abstract: 4007s
Contextual Info: 1N4001S - 1N4007S CREAT BY ART Pb 1.0 AMP. Silicon Rectifiers A-405 RoHS COMPLIANCE Features High efficiency, Low VF High current capability High reliability High surge current capability Low power loss φ0.6mm leads Green compound with suffix "G" on packing