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    MARKING CODE 1101 Search Results

    MARKING CODE 1101 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    CD4527BNS
    Texas Instruments CMOS BCD Rate Multiplier 16-SO Visit Texas Instruments
    LMV221SD/NOPB
    Texas Instruments 50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-WSON -40 to 85 Visit Texas Instruments Buy

    MARKING CODE 1101 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    omron F150-s1a

    Abstract: xw2z-200t OMRON XW2Z-200T F150-s1a omron f150 OMRON plc programming console manual XW2Z-200S-V F150-KP finder 40.31 ESC tower pro
    Contextual Info: V530-R160E, V530-R160EP 2-Dimensional Code Reader Fixed Type A code reader that handles dot peen markings! OMRON, in its pursuit of direct marking, now presents a 2-dimensional code reader that is ideal for reading dot peen markings. Integrating Objects and Information


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    V530-R160E, V530-R160EP Q129-E1-02 omron F150-s1a xw2z-200t OMRON XW2Z-200T F150-s1a omron f150 OMRON plc programming console manual XW2Z-200S-V F150-KP finder 40.31 ESC tower pro PDF

    smd diode code WP

    Abstract: diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode
    Contextual Info: SIEMENS BAT 165 Silicon Schottky Diode Preliminary data • Low-power Schottky rectifier diode • Miniature plastic package for surface mounting SMD ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration


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    Q62702-A1190 OD-323 50/60Hz, smd diode code WP diode smd marking WP 140KW diode smd marking code WP diode SMD CODE s 2A schottky rectifier diode PDF

    siemens rectifier

    Contextual Info: SIEMENS BAT 68-07W Silicon Schottky Diodes • For mixer applications in the VHF / UHF range • For high-speed switching applications 2 -o EH A07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


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    8-07W A07008 8-07W Q62702-A1200 OT-343 siemens rectifier PDF

    Contextual Info: SIEMENS BAT 62-03W Silicon Schottky Diode • Low Barrier diode for detectors up to GHz frequencies ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking BAT 62-03W L Ordering Code Pin Configuration Package Q62702-A1028


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    2-03W Q62702-A1028 2-03W OD-323 S535b05 D1SD354 900MHz PDF

    BC 170 transistor

    Contextual Info: SIEMENS BC 817-16W NPN Silicon AF Transistor • For general AF applications • High collector current • High current gain • Low collector-emltter saturation voltage • Complementary types: BC807W, BC808W PNP Type Marking Ordering Code Pin Configuration


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    17-16W BC807W, BC808W OT-323 Q62702-C2321 18-16W Q62702-Ã 18-25W Q62702-C2323 18-40W BC 170 transistor PDF

    Contextual Info: Preliminary Datasheet 2SC4050 R07DS0274EJ0400 Rev.4.00 Jan 10, 2014 Silicon NPN Epitaxial Application Low frequency amplifier, switching Outline RENESAS Package code: PLSP0003ZB-A Package name: MPAK 1. Emitter 2. Base 3. Collector 3 1 2 Note: Marking is “KIE“.


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    2SC4050 R07DS0274EJ0400 PLSP0003ZB-A R07DS0274EJ0400 PDF

    Contextual Info: SIEMENS BFP 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Marking Ordering Code Type Q62702-F1611


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    Q62702-F1611 OT-143 0535bOS 900MHz fl235b05 PDF

    cfy 19 siemens

    Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
    Contextual Info: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


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    VXM05208 Q62703-F106 Q62703-F107 Q62703-F108 0Qfcj75Cn cfy 19 siemens cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 CFY 10 PDF

    Q62702B

    Abstract: marking 34 diode
    Contextual Info: SIEMENS BBY 51-02W Silicon Tuning Diode Preliminary data • High Q hyperabrupt tuning diode • Low series inductance • Designed for low tuning voltage operation • For VCO’s in mobile communications equipment Type Marking Ordering Code Pin Configuration


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    1-02W Q62702-B0858 SCD-80 Q62702B marking 34 diode PDF

    Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C


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    Q62702-F102 OT-23 IS21el2 IS21/S aS35bG5 Giai71b PDF

    Contextual Info: SIEMENS Silicon Switching Diode SMBD 914 • For high-speed switching applications Type Marking Ordering Code tape and reel SMBD 914 s5D Q68000-A625 Pin Configuration Package1» SOT-23 1 ho 3 Rd-o o-^ EHA07002 Maximum Ratings Parameter Symbol


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    Q68000-A625 OT-23 EHA07002 23StiD5 01EE4c flE35bQ5 01EE500 PDF

    Contextual Info: SIEMENS BAR 65-02W Silicon RF Switching Diode Preliminary data • Low loss, low capacitance PIN-diode • Band switch for TV-tuners • Series diode for mobile communication transmit-receiver switch Type Marking Ordering Code Pin Configuration BAR 65-02W


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    5-02W Q62702-A1216 SCD-80 100MHz PDF

    diode RA 225 R

    Abstract: MARKING CODE A1 SOT343
    Contextual Info: SIEMENS BAT 62-07W Silicon Schottky Diode • Low barrier diode for detectors up to GHz frequencies 3 o- N 2 -o EHAQ70G8 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code Pin Configuration BAT 62-07W 62s


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    2-07W EHAQ70G8 2-07W Q62702-A1198 OT-343 diode RA 225 R MARKING CODE A1 SOT343 PDF

    marking bt5

    Contextual Info: BCR 148S SIEMENS NPN Silicon Digital Transistor Array • Switching circuit, inverter, interface circuit, driver circuit • Two galvaniv internal isolated Transistors driver circuit • Built in bias resistor (R1=47kiì, R2=47Kfl) 02 fi Marking Ordering Code Pin Configuration


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    47Kfl) Q62702-C2417 BCR148S r998-11-01 6235bQ5 01207bb 0E35b05 marking bt5 PDF

    Contextual Info: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


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    BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05 PDF

    012n3

    Contextual Info: SIEMENS BFP193 NPN Silicon RF Transistor « For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fT = 8GHz F=1.3dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    BFP193 900MHz Q62702-F1282 OT-143 012n3 PDF

    TRANSISTOR S1d

    Abstract: AX 1101
    Contextual Info: SIEMENS SMBTA 42M NPN Silicon High-Voltage Transistor • High breakdown voltage • Low collector-emitter saturation voltage • Complementary type: SMBTA 92M PNP m h Q62702-A1243 CO II s1D o SMBTA 42M Pin Configuration PO II Marking Ordering Code CD Type


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    Q62702-A1243 SCT-595 EHP00844 TRANSISTOR S1d AX 1101 PDF

    Contextual Info: SIEMENS BAS 16-03W Silicon Switching Diode Preliminary data • For high-speed switching applications Type Marking Ordering Code Pin Configuration Package BAS 16-03W B Q62702-A1231 1=A SOD-323 2=C Maximum Ratings Symbol Parameter Value 75 Diode reverse voltage


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    6-03W Q62702-A1231 OD-323 100ns, PDF

    Contextual Info: SIEMENS BCR 148W NPN Silicon Digital Transistor • Switching circuit, ¡nverter, interface circuit, driver circuit ' Built in bias resistor Ri=47kiì, R2=47kQ Pin Configuration Q62702-C2291 1= B Package LU II CVÍ II Ordering Code WEs O Marking BCR 148W


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    Q62702-C2291 OT-323 Therma148W 235L05 0235b05 PDF

    Contextual Info: SIEMENS BCR 108W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R]=2.2kD, R2=47kfl Pin Configuration BCR 108W WHs Q62702-C2275 1= B Package o Ordering Code II CO Marking LU II


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    47kfl) Q62702-C2275 OT-323 fl235bG5 0E35b05 0120bfi3 PDF

    Contextual Info: Preliminary Datasheet HIT1577 R07DS0485EJ0100 Rev.1.00 Jun 22, 2011 Silicon PNP Epitaxial Features • Low frequency power amplifier Outline RENESAS Package code: PTSP0003ZA-A Package name: CMPAK 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “TQ–”.


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    HIT1577 R07DS0485EJ0100 PTSP0003ZA-A PDF

    Contextual Info: SIEMENS BAS 28W Silicon Switching Diode Array For high-speed switching applications Electrical insulated diodes Type Marking Ordering Code Pin Configuration BAS 28W JTs 1 =C1 2 = C2 3 = A2 4 = A1 SOT-343 Q62702-A3466 Package Maximum Ratings Symbol Diode reverse voltage


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    Q62702-A3466 OT-343 EHN00019 100ns, PDF

    MARKING CODE T7s

    Abstract: MARKINGCODET7s
    Contextual Info: SIEM ENS BCR 166W PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kiî, R2=47kfi TT IF Type Marking Ordering Code Pin Configuration BCR 166W WTs UPON INQUIRY 1=B Package 2=E


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    47kfi) OT-323 fl235b05 623St30S MARKING CODE T7s MARKINGCODET7s PDF

    Contextual Info: Preliminary Datasheet HIT1577 R07DS0485EJ0100 Rev.1.00 Jun 22, 2011 Silicon PNP Epitaxial Features • Low frequency power amplifier Outline RENESAS Package code: PTSP0003ZA-A Package name: CMPAK 3 1. Emitter 2. Base 3. Collector 1 2 Note: Marking is “TQ–”.


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    HIT1577 R07DS0485EJ0100 PTSP0003ZA-A PDF