MARKING CODE 102L Search Results
MARKING CODE 102L Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CD4527BNS |
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CMOS BCD Rate Multiplier 16-SO |
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LMV221SD/NOPB |
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50 MHz to 3.5 GHz 40 dB Logarithmic Power Detector for CDMA and WCDMA 6-WSON -40 to 85 |
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LMV228SD/NOPB |
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RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON |
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LMV225SD/NOPB |
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RF Power Detector for CDMA and WCDMA in micro SMD 6-WSON -40 to 85 |
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LMV226TL/NOPB |
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RF Power Detectors for CDMA and WCDMA in micro SMD 4-DSBGA -40 to 85 |
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MARKING CODE 102L Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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10082662-102LF
Abstract: marking code STB
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-102LF 10082662-102LF marking code STB | |
10082662-102LFContextual Info: 1 PRODUCT NUMBER 10082662 -102LF 2 4 3 PLATING PERFORMANCE LEVEL PIP TAIL PLATING TELCORDIA CO Sn NOZZLE AREA SHOWN IS NOT CENTRE OF GRAVITY 9.50 5.82 4x 2.0 6 A (8.0 ) 8.00 13.85 #0.20 13.35 #0.13 11.90 MAX 5 4 3 2 1 23.70 4.00 E D C B A A 10.78 14.40 |
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-102LF 10082662-102LF | |
Contextual Info: 1 PRODUCT NUMBER 10126372-102LF 2 3 PLATING PERFORMANCE LEVEL 4 NOZZLE AREA TELCORDIA CO 0.40 11.90 MAX 1 B 10.58 5.64 4x(2.0) 9.5 0.1 (4.0) (13.49) C tolerance std ISO 1101 ISO 406 D TOLERANCES UNLESS OTHERWISE SPECIFIED 0.X surface Pro/E File 3.2 ISO 1302 |
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10126372-102LF | |
Contextual Info: Low VF SMD General Purpose Rectifiers CGRAT101L-HF Thru. CGRAT105L-HF Glass Passivated Type Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free 2010/DO-214AC Features 0.181 4.60 0.173(4.40) -Glass passivated cavity-free junction. |
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CGRAT101L-HF CGRAT105L-HF 2010/DO-214AC MIL-STD-750, CGRAT101L-HF CGRAT102L-HF CGRAT103L-HF CGRAT104L-HF | |
Contextual Info: Low VF SMD General Purpose Rectifiers ACGRAT101L-HF Thru. ACGRAT105L-HF Glass Passivated Type Reverse Voltage: 200 to 1000 Volts Forward Current: 1.0 Amp RoHS Device Halogen Free 2010/DO-214AC Features 0.181 4.60 0.173(4.40) -Glass passivated cavity-free junction. |
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ACGRAT101L-HF ACGRAT105L-HF 2010/DO-214AC AEC-Q101 MIL-STD-750, ACGRAT101L-HF ACGRAT102L-HF ACGRAT103L-HF ACGRAT104L-HF | |
20A ,125vdc relay
Abstract: 20A 125vdc relay MAGNETIC BALLAST PRD11AY0-120 prd-3d PRD3AJ0-120 PRD-3AJ3-24 7-1393127-5
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E22575; LR15734; 600VAC 125VDC 12VDC 12VAC 20A ,125vdc relay 20A 125vdc relay MAGNETIC BALLAST PRD11AY0-120 prd-3d PRD3AJ0-120 PRD-3AJ3-24 7-1393127-5 | |
20A 125vdc relay
Abstract: PRD-7AY0-120 1393130-7 20A ,125vdc relay C144 LR15734 6-1393127-1 3hp 150 magnetic blowout 30A 125vdc relay PRDA-11AGA-120 7-1393131-4
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E22575; LR15734; 600VAC 125VDC 12VDC 12VAC 20A 125vdc relay PRD-7AY0-120 1393130-7 20A ,125vdc relay C144 LR15734 6-1393127-1 3hp 150 magnetic blowout 30A 125vdc relay PRDA-11AGA-120 7-1393131-4 | |
220VDC coil 30A SPDT RELAY
Abstract: 20A 125vdc relay E22575 32 amp 20A ,125vdc relay 11dy PRD-11DF0-12 PRD-5DF0-12 3ar4
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E22575 PRD11 220VDC coil 30A SPDT RELAY 20A 125vdc relay E22575 32 amp 20A ,125vdc relay 11dy PRD-11DF0-12 PRD-5DF0-12 3ar4 | |
tm 48f 038 transformer
Abstract: 2j 103k 51f smd
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MIL-PRF-39010, tm 48f 038 transformer 2j 103k 51f smd | |
Contextual Info: THT POWER INDUCTORS E & E Magnetic Products Limited POWER CUBE INDUCTORS RIT1180A Series SCHEMATICS Used in high power application Large permissible DC current Ideal for computers and portable power devices, DC-DC converters, energy storage applications and Input-Output filter applications |
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RIT1180A RIT1180A-281LF PI135 | |
k 3683
Abstract: circuit k 3683 diode 3683 501L marking 102L
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MIL-STD-202, 3681S-1 3682S-1 3683S-1 3684S-1 -102L -202L -502L -103L -203L k 3683 circuit k 3683 diode 3683 501L marking 102L | |
k 3683Contextual Info: oH VE S CO AV R M AI SIO PL LA N IA BL S NT E Features • *R ■ ■ ■ Repeatable settings Resolution to 0.001 % Digital display provides excellent readability Snap-in panel mount 3680 Family - Precision Potentiometer Electrical Characteristics1 Product Dimensions |
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MIL-STD-202, 3681S-1 3682S-1 3683S-1 3684S-1 -102L -202L -502L -103L -203L k 3683 | |
501l
Abstract: marking 102L k 3683 D 1651
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MIL-STD-202, 3681S-1 3682S-1 3683S-1 3684S-1 -102L -202L -502L -103L -203L 501l marking 102L k 3683 D 1651 | |
Contextual Info: PL IA N T Features M • Repeatable settings *R oH S CO ■ Resolution to 0.001 % ■ Digital display provides excellent readability ■ Snap-in panel mount ■ RoHS compliant* 3680 Family - Precision Potentiometer Electrical Characteristics1 Product Dimensions |
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MIL-STD-202, -104L 3682S-1 -501L -102L -202L -502L -103L -203L -503L | |
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501l
Abstract: k 3683 marking 102L 3685S-1
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MIL-STD-202, H-385-1 H-385-2 H-385-3 H-385-4 H-385-5 501l k 3683 marking 102L 3685S-1 | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11046-1E MEMORY CMOS 4 x 4 M × 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank × 4,194,304-Word × 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
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DS05-11046-1E MB81F64442C-102/-103/-102L/-103L 304-Word MB81F64442C F9802 | |
MB81F641642C
Abstract: Sequential Timing
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DS05-11045-1E MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit F9802 Sequential Timing | |
DS05-11047-1EContextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11047-1E MEMORY CMOS 4 x 2 M × 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank × 2,097,152-Word × 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
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DS05-11047-1E MB81F64842C-102/-103/-102L/-103L 152-Word MB81F64842C F9802 DS05-11047-1E | |
Contextual Info: MEMORY CMOS 4 x 1 M x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642C-102/-103/-102L/-103L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
OCR Scan |
MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit 54-pin FPT-54P-M02) | |
F641642C
Abstract: f64164
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OCR Scan |
MB81F641642C-102/-103/-102L/-103L 576-Word MB81F641642C 16-bit F641642C f64164 | |
Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
OCR Scan |
MB81F64842C-102/-103/-102L/-103L 152-Word MB81F64842C 842IC MB81F64842CSDRAM | |
Contextual Info: MEMORY CMOS 4 x 2 M x 8 BIT SYNCHRONOUS DYNAMIC RAM MB81F64842C-102/-103/-102L/-103L CMOS 4-Bank x 2,097,152-Word x 8 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64842C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
OCR Scan |
MB81F64842C-102/-103/-102L/-103L 152-Word MB81F64842C 54-pin FPT-54P-M02) | |
Contextual Info: MEMORY CMOS 4 x 4 M x 4 BIT SYNCHRONOUS DYNAMIC RAM MB81F64442C-102/-103/-102L/-103L CMOS 4-Bank x 4,194,304-Word x 4 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F64442C is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
OCR Scan |
MB81F64442C-102/-103/-102L/-103L 304-Word MB81F64442C 54-pin FPT-54P-M02) F54003S-1C-1 | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE4.1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642D-75/-102/-102L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F641642D is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing |
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MB81F641642D-75/-102/-102L 576-Word MB81F641642D 16-bit |