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    MARKING CODE 0* DBM SOT343 Search Results

    MARKING CODE 0* DBM SOT343 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    74LVCH16501APF8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APA8 Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation
    74LVCH16501APV Renesas Electronics Corporation LOGIC 40056 MOTHER CODE Visit Renesas Electronics Corporation

    MARKING CODE 0* DBM SOT343 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BFU725F

    Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F OT343F JESD625-A BFU725F germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power PDF

    transistor marking N1

    Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave PDF

    MGA-53543-TR1G

    Abstract: marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz MGA-53543
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		MGA-53543 SC-70 OT343) 5989-3741EN AV02-0455EN MGA-53543-TR1G marking 17 sot343 SOT343 lna FR4 dielectric constant at 2.4 Ghz PDF

    mga-53453

    Abstract: MGA 563 A004R MGA-53543
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		MGA-53543 MGA-53543 OT343) 5989-3741EN AV02-0455EN mga-53453 MGA 563 A004R PDF

    mga-53453

    Abstract: A004R MGA-53543 LNA marking 407
    Text: MGA-53543 50 MHz to 6 GHz High Linear Amplifier Data Sheet Description Features Avago Technologies’s MGA-53543 is a high dynamic range low noise amplifier MMIC housed in a 4-lead SC‑70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		MGA-53543 MGA-53543 OT343) 5989-3741EN AV02-0455EN mga-53453 A004R LNA marking 407 PDF

    DRO lnb

    Abstract: JESD625-A BFU630 BFU630F
    Text: BFU630F NPN wideband silicon RF transistor Rev. 1 — 15 December 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION


    Original     		BFU630F OT343F JESD625-A DRO lnb BFU630 BFU630F PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    BFU725F

    Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
    Text: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F OT343F JESD625-A BFU725F germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference Germanium power PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    transistor marking N1

    Abstract: LNB ka band Germanium power
    Text: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


    Original     		BFU725F/N1 OT343F JESD625-A BFU725F transistor marking N1 LNB ka band Germanium power PDF

    ATF-38143

    Abstract: A004R ATF-38143-TR1G
    Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		ATF-38143 ATF-38143 SC-70 OT343) OT-343 OT343 SC-70) 5989-3745EN AV02-1443EN A004R ATF-38143-TR1G PDF

    lambda alpha

    Abstract: ATF-38143
    Text: ATF-38143 Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features Avago Technologies’s ATF-38143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 SOT343 surface mount plastic package. • Lead-free Option Available


    Original     		ATF-38143 SC-70 OT343) OT-343 SC-70) 5989-3745EN AV02-1443EN lambda alpha PDF

    transistor marking T79 ghz

    Abstract: marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon/Silicon Germanium discrete, MMIC SELECTION GUIDE January 2005 Bluetooth is a trademark owned by Bluetooth SIG, Inc., U.S.A. When the product s listed in this document is subject to any applicable import or export control laws and regulation of the authority


    Original     		PU10015EJ04V0PF transistor marking T79 ghz marking code C1H mmic marking code C3E SOT-89 upb1507 marking code C1G mmic marking code C1E mmic data book transistors 2SA uPC2712 pc3215 transistor 2SA data book PDF

    ujt 2646

    Abstract: TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download
    Text: D a t a B o o k , J a n. 20 0 1 GaAs Components N e v e r s t o p t h i n k i n g . Edition 2001-01-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany Infineon Technologies AG 2001. All Rights Reserved. Attention please!


    Original     		D-81541 14-077S Q62702-D1353 Q62702-G172 Q62702-G173 ujt 2646 TRANSISTOR J 5804 label infineon barcode msc 1697 MSC 1697 IC pin diagram Rohde und Schwarz Active Antenna HE 011 cd 6283 audio smd transistor v75 log tx2 0909 IC data book free download PDF

    transistor SMD MARKING CODE 772

    Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
    Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1


    Original     		P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404 PDF

    BGA420

    Abstract: E6327
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA  Noise figure NF = 2.3 dB at 1.8 GHz 1  Reverse isolation > 28 dB and


    Original     		BGA420 25-Technologie VPS05605 EHA07385 OT343 BGA420 E6327 PDF

    transistor SMD MARKING CODE 772

    Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
    Text: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1


    Original     		P-SOT343-4-1 Q62702-G0116 RN/50 GPS05605 transistor SMD MARKING CODE 772 SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607 PDF

    transistor marking codes list

    Abstract: BFG325W
    Text: BFG325W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		BFG325W/XR OT343R transistor marking codes list BFG325W PDF

    A7 NPN EPITAXIAL

    Abstract: Philips FA 145 BFG310W/XR BFG310W
    Text: BFG310W/XR NPN 14 GHz wideband transistor Rev. 01 — 2 February 2005 Product data sheet 1. Product profile 1.1 General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. 1.2 Features • ■ ■ ■ High power gain


    Original     		BFG310W/XR OT343R A7 NPN EPITAXIAL Philips FA 145 BFG310W/XR BFG310W PDF

    marking r4 SOT343

    Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
    Text: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3  Cascadable 50 -gain block 4  Unconditionally stable  Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1  Noise figure NF = 2.2 dB at 1.8 GHz


    Original     		BGA427 25-Technologie VPS05605 EHA07378 OT343 marking r4 SOT343 bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		BGA420 25-Technologie EHA07385 PDF

    INFINEON marking BGA

    Abstract: BGA420 t501
    Text: BGA420 Si-MMIC-Amplifier in SIEGET  25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD


    Original     		BGA420 25-Technologie EHA07385 OT343 INFINEON marking BGA BGA420 t501 PDF

    Untitled

    Abstract: No abstract text available
    Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD


    Original     		BGA420 25-Technologie EHA07385 OT343 PDF

    2SK2396A

    Abstract: NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor
    Text: SILICON MICROWAVE SEMICONDUCTORS Silicon discrete, Silicon MMIC Dual gate GaAs FET SELECTION GUIDE 1999/2000 6th Edition [MEMO] 2 Selection Guide P10100EJ6V0SG00 • The information in this document is based on documents issued in October,1999 at the latest. The


    Original     		P10100EJ6V0SG00 2SK2396A NEC 2SK2396A k2396a pc1658 2SC2407 P10100EJ6V0SG00 UAA 1006 k2396 K2597 Marking Code SAW MOS transistor PDF