STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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Untitled
Abstract: No abstract text available
Text: 2DA2018 ADV AN CE I N FORM AT I ON 12V LOW VCE sat PNP SURFACE MOUNT TRANSISTOR Features Mechanical Data • • • • • • • Low Collector-Emitter Saturation Voltage, VCE(sat) Ultra-Small Surface Mount Package “Lead Free”, RoHS Compliant (Note 1)
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2DA2018
00V-MM,
OT-523
J-STD-020
MIL-STD-202,
DS31823
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and
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J-STD-020
MIL-STD-202,
DS35572
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5TS Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and
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TSOT25
J-STD-020
MIL-STD-202,
DS35428
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5V ADV AN CE I N FORM AT I ON 4 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection
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OT553
J-STD-020
DS35568
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Untitled
Abstract: No abstract text available
Text: D5V0L4B5S Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 4 Channels of Bi-directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and
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OT353
J-STD-020
MIL-STD-202,
DS35573
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Untitled
Abstract: No abstract text available
Text: D5V0L2B3W Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used at Portable Electronics, Cellular Handsets and
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OT323
J-STD-020
MIL-STD-202,
DS35567
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Untitled
Abstract: No abstract text available
Text: D5V0L2B3SO Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-Directional ESD Protection Low Channel Input Capacitance Typically Used in Cellular Handsets, Portable Electronics,
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J-STD-020
MIL-STD-202,
DS35430
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Untitled
Abstract: No abstract text available
Text: D5V0L2B3T ADV AN CE I N FORM AT I ON 2 CHANNEL LOW CAPACITANCE BI-DIRECTIONAL TVS ARRAY Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 2 Channels of Bi-directional ESD Protection
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OT523
J-STD-020
DS35571
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2LP4 ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV Ultra Low Profile 0.4mm , Ideal for Thin Portable Electronics
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X2-DFN1006-2
J-STD-020
DS35586
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2WS ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air – ±30kV, Contact – ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance
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OD323
J-STD-020
DS35429
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Untitled
Abstract: No abstract text available
Text: D5V0L1B2T ADV AN CE I N FORM AT I ON LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Features Mechanical Data • • • • • • • • Provides ESD Protection per IEC 61000-4-2 Standard: Air ±30kV, Contact ±30kV 1 Channel of ESD Protection Low Channel Input Capacitance
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OD523
J-STD-020
DS35597
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2SA1774
Abstract: 2SC4617
Text: UTC 2SA1774 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR FEATURES * Excellent hFE linearity * Complements the UTC 2SC4617 MARKING 2 1 A5 3 SOT-523 1: EMITTER 2: BASE 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER Collector-Base Voltage
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2SA1774
2SC4617
OT-523
QW-R221-011
2SA1774
2SC4617
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MARKING CE SOT523
Abstract: BC846AT BC846BT BC846T BC847AT BC847BT BC847CT BC847T
Text: Central BC846T SERIES BC847T SERIES TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and
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BC846T
BC847T
OT-523
200Hz
BC846AT
BC847AT
BC846BT
BC847BT
MARKING CE SOT523
BC846AT
BC846BT
BC847AT
BC847BT
BC847CT
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BC856T
Abstract: MARKING CE SOT523
Text: BC856T SERIES BC857T SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BC856T
BC857T
OT-523
100MHz
200Hz
BC856BT
MARKING CE SOT523
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Untitled
Abstract: No abstract text available
Text: BC846T SERIES BC847T SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BC846T
BC847T
OT-523
100MHz
200Hz
BC846BT
BC847BT
BC847CT
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Untitled
Abstract: No abstract text available
Text: BC846T SERIES BC847T SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BC846T
BC847T
OT-523
BC846AT
BC847AT
BC846BT
BC847BT
BC847CT
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Untitled
Abstract: No abstract text available
Text: BC856T SERIES BC857T SERIES w w w. c e n t r a l s e m i . c o m SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for
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BC856T
BC857T
OT-523
BC856AT
BC857AT
BC856BT
BC857BT
BC857CT
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1N916
Abstract: MMBT3906T SC-89
Text: MMBT3906T General Purpose Transistor PNP Silicon COLLECTOR 3 3 1 BASE P b Lead Pb -Free 1 2 SC-89 (SOT-523F) 2 EMITTER Maximum Ratings Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO
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MMBT3906T
SC-89
OT-523F)
28-Sep-09
SC-89
50BSC
1N916
MMBT3906T
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1N914
Abstract: MMBT2222AT SC-89
Text: MMBT2222AT Plastic-Encapsulate Transistors NPN Silicon COLLECTOR 3 3 1 1 P b Lead Pb -Free 2 BASE SC-89 (SOT-523F) 2 EMITTER MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Value 40
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MMBT2222AT
SC-89
OT-523F)
MMBT2222AT
28-Apr-2010
SC-89
50BSC
1N914
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MMBT1015
Abstract: MMBT1815
Text: UNISONIC TECHNOLOGIES CO., LTD MMBT1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR 3 3 1 FEATURES 2 *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to MMBT1815 SOT-23 1 2 SOT-523 3 3
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MMBT1015
150mA
MMBT1815
OT-23
OT-523
OT-113
OT-323
MMBT1015L
MMBT1015-x-AC3-R
MMBT1015L-x-AC3-R
MMBT1015
MMBT1815
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Untitled
Abstract: No abstract text available
Text: Central CMUT2907A Sem iconductor Corp. SURFACE MOUNT ULTRAmini PNP SILICON TRANSISTOR DESCRIPTION: The C E N T R A L SEM IC O N D U CTO R CM UT2907A type is an P N P silicon transistor manufactured by the epitaxial planar process, epoxy molded in an ULTRAmini™ surface
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CMUT2907A
UT2907A
150mA,
OT-523
OT-523
12-February
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113 marking code PNP transistor
Abstract: transistor GTO BC856T 113 marking code transistor
Text: Central“ BC856T SERIES BC857T SERIES Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856T and BC857T Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and
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OCR Scan
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PDF
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BC856T
BC857T
CP588,
30-0ctober
OT-523
113 marking code PNP transistor
transistor GTO
113 marking code transistor
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Untitled
Abstract: No abstract text available
Text: Central BC846T SERIES BC847T SERIES Semiconductor Corp. DESCRIPTION: SURFACE MOUNT NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR BC846T and BC847T Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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OCR Scan
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PDF
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BC846T
BC847T
CP188,
29-October
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