Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
|
Original
|
OT-23
2SD2114
OT-23
100MHz
500mA,
|
PDF
|
BBV marking
Abstract: 2SD2114 bbv 08 BBV transistor marking BBW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. z High emitter-base voltage. z Low VCE (sat). 1. BASE 2.EMITTER 3.COLLECTOR MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
2SD2114
OT-23
100MHz
500mA,
BBV marking
2SD2114
bbv 08
BBV transistor
marking BBW
|
PDF
|
BBV transistor
Abstract: marking BBW marking BBV BBV marking
Text: 2SD2114 SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
|
Original
|
OT-23
2SD2114
OT-23
500mA
500mA,
100MHz
BBV transistor
marking BBW
marking BBV
BBV marking
|
PDF
|
marking BBW
Abstract: No abstract text available
Text: DCR0029A 3.2GHz MHz BBW BPF Rev 0 – Origin Date: November 13, 2006 – Revision Date November 13, 2006 Features • Low Loss • Symmetrical Attenuation • Surface Mount Device Description Silver Ag coated coupled ceramic resonators mounted on PCB. Developed
|
Original
|
DCR0029A
-30oC
5R51880
marking BBW
|
PDF
|
marking code BBH
Abstract: st marking BBM code st smd diode marking code SMD circuits MARKING CODE AA smd code marking 333 SMBJ8.5CA marking code BUH Marking Code SMD bbz ae SMC MARKING SMD CODE BUQ
Text: DIODES,SMD,Transient Voltage Suppression EMC, FILTERS & SUPPRESSION An extensive range of unidirectional and bidirectional transient voltage suppressors offering a high energy absorption capability ranging from 400W up to 1500W. Available in surface mount or through hole packages. Designed to protect voltage sensitive components, these
|
Original
|
SMA/DO214AC
SMCJ20CA
SMCJ22CA
SMCJ24CA
SMCJ26CA
SMCJ28CA
SMCJ30CA
SMCJ33CA
SMCJ40CA
SMCJ48CA
marking code BBH
st marking BBM code
st smd diode marking code
SMD circuits MARKING CODE AA
smd code marking 333
SMBJ8.5CA
marking code BUH
Marking Code SMD bbz
ae SMC MARKING
SMD CODE BUQ
|
PDF
|
bq 8050
Abstract: HF S4 13003 F6 13003 bL78L05 HF 13003 bq d882 2SC945 KJG BAV99 WG 13003 2SC945 AQ
Text: 目 录 CONTENTS Page 产品索引（按字母顺序） ALPHANUMERIC INDEX A 产品目录表（按电性能） TABLE OF CONTENTS G 小信号开关二极管 Small Signal Switching Diodes G 小信号肖特基二极管 Small Signal Schottky Diodes H 双极型晶体管
|
Original
|
OD-123
OD-123
OD-323
OD-323
OD-523
OD-523
OT-23
OT-23
OT-323
OT-323
bq 8050
HF S4 13003
F6 13003
bL78L05
HF 13003
bq d882
2SC945
KJG BAV99
WG 13003
2SC945 AQ
|
PDF
|
bbc 127 324 DIODE
Abstract: 1.0 SMBJ SMBJ130A SMBJ100A SMBJ16CA SMBJ6.5A SMBJ12A SMBJ28A SMBJ40A SMBJ13CA
Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C
|
Original
|
DO-214AA)
bbc 127 324 DIODE
1.0 SMBJ
SMBJ130A
SMBJ100A
SMBJ16CA
SMBJ6.5A
SMBJ12A
SMBJ28A
SMBJ40A
SMBJ13CA
|
PDF
|
bbc 127 324 DIODE
Abstract: marking bbz st marking BBM code SMBJ30A DO-214AA 0/bbc 127 324 DIODE SMBJ16CA-TR bbg marking st transil marking BUZ SMBJ40A st marking BBN code
Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C
|
Original
|
DO-214AA)
bbc 127 324 DIODE
marking bbz
st marking BBM code
SMBJ30A DO-214AA
0/bbc 127 324 DIODE
SMBJ16CA-TR
bbg marking st transil
marking BUZ
SMBJ40A
st marking BBN code
|
PDF
|
bbc 127 324 DIODE
Abstract: marking code BBW st marking BBM code SMBJ12A BUV 481 marking code BUH SMBJ15 SMBJ6.0A/CA smbj marking code st 718 diode
Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ A K
|
Original
|
DO-214AA)
MIL-STD-750,
bbc 127 324 DIODE
marking code BBW
st marking BBM code
SMBJ12A
BUV 481
marking code BUH
SMBJ15
SMBJ6.0A/CA
smbj marking code
st 718 diode
|
PDF
|
bbc 127 324 DIODE
Abstract: st marking BBM code smbj33ca smbj marking code st 718 diode BUV 481 SMBJ30A DO-214AA SMBJ15 transil diode OCT2001
Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s – 4 kW (8/20 µs) A ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Low leakage current: – 0.2 µA at 25 °C – 1 µA at 85 °C ■ Operating Tj max: 150 °C
|
Original
|
DO-214AA)
MIL-STD-750,
bbc 127 324 DIODE
st marking BBM code
smbj33ca
smbj marking code
st 718 diode
BUV 481
SMBJ30A DO-214AA
SMBJ15
transil diode
OCT2001
|
PDF
|
BUV 481
Abstract: bbg "marking" diode IPC7531 bbg marking st transil marking bbz ST BUN marking BBW smbj12a SMBJ24a SMBJ12A-TR
Text: SMBJ Transil Features • Peak pulse power: – 600 W 10/1000 s ■ Stand off voltage range: from 5 V to 188 V ■ Unidirectional and bidirectional types ■ Operating Tj max: 150 °C ■ JEDEC registered package outline A K Unidirectional SMB (JEDEC DO-214AA)
|
Original
|
DO-214AA)
IEC61000-4-2
IEC61000-4-5
UL94V-0
MIL-STD-750,
RS-481
IEC60286-3
IPC7531
BUV 481
bbg "marking" diode
bbg marking st transil
marking bbz
ST BUN
marking BBW
smbj12a
SMBJ24a
SMBJ12A-TR
|
PDF
|
SMBJ5.0A DO214AA
Abstract: marking code BBW SMBJ5.0A buz bbg "marking" diode SMBJ5.0A bbz marking code st marking BBM code SMBJ15 SMBJ13A-TR SMBJ15A-TR
Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline
|
Original
|
SMBJ188A-TR,
DO-214AA)
SMBJ5.0A DO214AA
marking code BBW
SMBJ5.0A buz
bbg "marking" diode
SMBJ5.0A
bbz marking code
st marking BBM code
SMBJ15
SMBJ13A-TR
SMBJ15A-TR
|
PDF
|
st marking BBM code
Abstract: bbn DIODE SMBJ36ATR st marking BBN code BUA DIODE marking code BBW ST BUN marking BBO code SMBJ5.0A buz SMBJ13A-TR
Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline
|
Original
|
SMBJ188A-TR,
DO-214AA)
st marking BBM code
bbn DIODE
SMBJ36ATR
st marking BBN code
BUA DIODE
marking code BBW
ST BUN
marking BBO code
SMBJ5.0A buz
SMBJ13A-TR
|
PDF
|
FY632
Abstract: FW625
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18D MT28C128564W18D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
|
Original
|
128Mb
32Mb/64Mb
09005aef80b10a55
MT28C128564W18D
FY632
FW625
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
|
Original
|
128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
|
PDF
|
FW643
Abstract: FX639 FX649 FY631 FY627 w18 SMD smd transistor w18 w18 smd transistor FY651 FW649
Text: ADVANCE‡ 128Mb MULTIBANK BURST FLASH 32Mb/64Mb ASYNC/PAGE CellularRAM COMBO FLASH AND CellularRAM COMBO MEMORY MT28C128532W18/W30D MT28C128564W18/W30D Low Voltage, Wireless Temperature Features Figure 1: 77-Ball FBGA • Stacked die Combo package Includes two 64Mb Flash devices
|
Original
|
128Mb
32Mb/64Mb
MT28C128532W18/W30D
MT28C128564W18/W30D
77-Ball
09005aef80b10a55
MT28C128564W18D
FW643
FX639
FX649
FY631
FY627
w18 SMD
smd transistor w18
w18 smd transistor
FY651
FW649
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 2SD2114 TRANSISTOR NPN SOT-23 FEATURES z High DC current gain. hFE = 1200 (Typ.) z High emitter-base voltage. VEBO =12V (Min.) z Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
|
Original
|
OT-23
2SD2114
OT-23
500mA
100MHz
500mA,
|
PDF
|
BBV marking
Abstract: 2SD2114
Text: 2SD2114 0.5 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z z z High DC current gain :hFE = 1200 Typ High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA)
|
Original
|
2SD2114
500mA
OT-23
500mA,
100MHz
01-June-2005
BBV marking
2SD2114
|
PDF
|
st marking BBM code
Abstract: bbn DIODE SMBJ18A-TR SMBJ10A-TR SMBJ12A-TR SMBJ13A-TR SMBJ15A-TR SMBJ16A-TR SMBJ188A-TR SMBJ20A-TR
Text: SMBJ5.0A-TR, CA-TR SMBJ188A-TR, CA-TR TRANSIL Features • Peak pulse power: 600 W 10/1000 µs ■ Stand off voltage range: from 5 V to 188 V ■ Uni and bidirectional types ■ Low clamping factor ■ Fast response time ■ JEDEC registered package outline
|
Original
|
SMBJ188A-TR,
DO-214AA)
st marking BBM code
bbn DIODE
SMBJ18A-TR
SMBJ10A-TR
SMBJ12A-TR
SMBJ13A-TR
SMBJ15A-TR
SMBJ16A-TR
SMBJ188A-TR
SMBJ20A-TR
|
PDF
|
BBV transistor
Abstract: 2SD2114 SOT-23 2.D SOT-23-hg VEBO-12V transistor k 820
Text: 2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. High Emitter-Base Voltage. VEBO=12V Min. A L 3 3 C B Top View CLASSIFICATION OF hFE
|
Original
|
2SD2114
OT-23
2SD2114-V
2SD2114-W
500mA,
100MHz
24-Feb-2011
BBV transistor
2SD2114
SOT-23 2.D
SOT-23-hg
VEBO-12V
transistor k 820
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TPS62040 TPS62042, TPS62043 TPS62044, TPS62046 www.ti.com SLVS463B − JUNE 2003 − REVISED OCTOBER 2005 1.2 A/1.25 MHz, HIGH-EFFICIENCY STEP-DOWN CONVERTER FEATURES D Up to 95% Conversion Efficiency D Typical Quiescent Current: 18 µA D Load Current: 1.2 A
|
Original
|
TPS62040
TPS62042,
TPS62043
TPS62044,
TPS62046
SLVS463B
|
PDF
|
sps gf20
Abstract: gf20 connector EWCAP-15 GF20
Text: TABLE OF CONTENTS SHEET NO. SHEET DESCRIPTION 1 NOTES 2 KEY CONFIGURATIONS 3 BLADE SEALED ASSEMBLY i SYSTEM PACKAGING 5 BOM n u . a ITTI D © Í7TI ITO I BLADE S E A LE D ASSEM BLY OPTIONAL LASER MARKING THIS SURFACE SEE NOTE 3g. & ^ HD a 5 S 1 > KD Ò
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Omnimate Range - 3.50 mm Pitch . Socket blocks BLIDC . Socket blocks BLIDCB Socket blocks BLIDC . • • H hB w w b^bB H 8B B B B H H w B W B W W W bbwW W W IiBB w w I Technical data VDE UL CSA Technical data VDE UL CSA Technical data VDE UL CSA Rated voltage V
|
OCR Scan
|
190Marking
|
PDF
|
s21c
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR T Y P E TRAN SISTO R \ 2 S Q 5 FOR VCO APPLICATION Q 7 U nit in mm 2 1±0 1 MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector C urrent Base C urrent Collector Power Dissipation
|
OCR Scan
|
SC-70
2SC5107
s21c
|
PDF
|