KDV316E
Abstract: Marking BA
Text: SEMICONDUCTOR KDV316E MARKING SPECIFICATION ESC PACKAGE 1. Marking method Laser Marking 2. Marking BA No. 2005. 2. 15 Item Marking Description Device Mark BA KDV316E Revision No : 0 1/1
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KDV316E
KDV316E
Marking BA
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DSA00103920.txt
Abstract: No abstract text available
Text: SEMICONDUCTOR BAS23W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 JE 1 2 Item Marking Description Device Mark JE BAS23W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAS23W
DSA00103920.txt
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BAW56W
Abstract: marking h3
Text: SEMICONDUCTOR BAW56W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H3 1 2 Item Marking Description Device Mark H3 BAW56W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAW56W
BAW56W
marking h3
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marking JC
Abstract: BAV23S marking sot23 marking JB sot23 jb SOT23 MARKING JC BAV23S JB SOT23 E2- marking marking JB sot23
Text: SEMICONDUCTOR BAV23S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking JC 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark JC BAV23S - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV23S
OT-23
marking JC
BAV23S marking
sot23 marking JB
sot23 jb
SOT23 MARKING JC
BAV23S
JB SOT23
E2- marking
marking JB sot23
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marking code vishay label
Abstract: origin capacitor jedec code VISHAY MARKING CODE COUNTRY OF ORIGIN capacitor package Vishay capacitor code marking IEC 60068-1 marking code diode 04 transistor country code
Text: Package Marking Vishay BCcomponents Package Marking PACKAGE MARKING The Capacitor Package Marking is detailed as below: BARCODE LABEL MARKING LINE MARKING EXPLANATION 1 Manufacturer's name 2 3 Country of origin Sub-family 4 5 6 Type description Capacitance value in µF, tolerance, voltage and climatic
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19-Oct-04
marking code vishay label
origin
capacitor jedec code
VISHAY MARKING CODE
COUNTRY OF ORIGIN
capacitor package
Vishay capacitor code marking
IEC 60068-1
marking code diode 04
transistor country code
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BAV99W
Abstract: H5 MARKING
Text: SEMICONDUCTOR BAV99W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H5 1 2 Item Marking Description Device Mark H5 BAV99W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV99W
BAV99W
H5 MARKING
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BAV70W
Abstract: 1h41
Text: SEMICONDUCTOR BAV70W MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 H4 1 2 Item Marking Description Device Mark H4 BAV70W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV70W
BAV70W
1h41
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H8 SOT-23 bav99
Abstract: BAV99 H8 marking H8 H8 SOT-23 SOT23 H8 H8 marking marking H8 SOT-23 bav99 marking BAV99 JB SOT23
Text: SEMICONDUCTOR BAV99 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H8 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H8 BAV99 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV99
OT-23
H8 SOT-23 bav99
BAV99 H8
marking H8
H8 SOT-23
SOT23 H8
H8 marking
marking H8 SOT-23
bav99 marking
BAV99
JB SOT23
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BAV21W
Abstract: No abstract text available
Text: SEMICONDUCTOR BAV21W MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking HU 0 1 2 1 No. Item Marking Description Device Mark HU BAV21W hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAV21W
BAV21W
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marking H6 sot 23
Abstract: marking H6 BAW56 marking EA SOT23 SOT23-5 marking H6
Text: SEMICONDUCTOR BAW56 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking H6 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark H6 BAW56 - - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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BAW56
OT-23
marking H6 sot 23
marking H6
BAW56
marking EA SOT23
SOT23-5 marking H6
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marking BA
Abstract: transistor mark BA ba 2nd year PG05BAUSM
Text: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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PG05BAUSM
marking BA
transistor mark BA
ba 2nd year
PG05BAUSM
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transistor mark BA
Abstract: KTC9011S ktc90
Text: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method
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KTC9011S
OT-23
transistor mark BA
KTC9011S
ktc90
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B35R
Abstract: Z6W27V DO-218 do218 Z6W27
Text: SEMICONDUCTOR Z6W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B35R 0D24 No. Item 1 Description Bar N(-) Type B35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z6W27V
DO-218
B35R
Z6W27V
do218
Z6W27
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b30r
Abstract: Z5W27V b30r 0d24 marking b30r do-218 do218 1b30r
Text: SEMICONDUCTOR Z5W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B30R 0D24 No. Item 1 Description Bar N(-) Type B30R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W27V
DO-218
b30r
Z5W27V
b30r 0d24
marking b30r
do218
1b30r
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1A30R
Abstract: MARKING CMR A30R E30A23VR
Text: SEMICONDUCTOR E30A23VR MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 A30R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type A30R E30A23VR A : Voltage classification 0D24
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E30A23VR
1A30R
MARKING CMR
A30R
E30A23VR
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e35r
Abstract: Z5W37V do-218 do218
Text: SEMICONDUCTOR Z5W37V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 E35R 0D24 No. Item 1 Description Bar N(-) Type E35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W37V
DO-218
e35r
Z5W37V
do218
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Z4W27V
Abstract: DO-218 B25R do218 month marking
Text: SEMICONDUCTOR Z4W27V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 B25R 0D24 No. Item 1 Description Bar N(-) Type B25R B : Voltage Classification Lot No. 2008. 7. 2 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z4W27V
DO-218
Z4W27V
B25R
do218
month marking
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do-218
Abstract: H35R Z5W48V do218 diode 218 transistor day
Text: SEMICONDUCTOR Z5W48V MARKING SPECIFICATION DO-218 PACKAGE 1. Marking method Laser Marking 2. Marking 1 H35R 0D24 No. Item 1 Description Bar N(-) Type H35R B : Voltage Classification Lot No. 2008. 7. 7 3 Marking Polarity Device Name 2 Revision No : 0 0D24
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Z5W48V
DO-218
H35R
Z5W48V
do218
diode 218
transistor day
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ba 2nd years
Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
Text: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs
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KRX101U
ba 2nd years
KRX101U
b.a 1st year
ba 2nd year
ba 1st year
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E35A2CR
Abstract: e35a Diode MarkING N
Text: SEMICONDUCTOR E35A2CR MARKING SPECIFICATION MR PACKAGE 1. Marking method Laser Marking 2. Marking 1 35R 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 35R 0D24 E35A2CR Year 0~9 : 2000~2009 D Month
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E35A2CR
E35A2CR
e35a
Diode MarkING N
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ba 2nd years
Abstract: transistor mark BA KRX101E marking BA
Text: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.
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KRX101E
ba 2nd years
transistor mark BA
KRX101E
marking BA
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transistor day
Abstract: diode 30s Diode MarkING N MARKING CMR E30A2CS
Text: SEMICONDUCTOR E30A2CS MARKING SPECIFICATION CMR PACKAGE 1. Marking method Laser Marking 2. Marking 1 30S 0D24 2 3 1 No. Item Polarity Mark Lot No. 2000. 12. 27 Revision No : 0 Marking Description Bar N(-) Type 30S 0D24 E30A2CS Year 0~9 : 2000~2009 D Month
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E30A2CS
transistor day
diode 30s
Diode MarkING N
MARKING CMR
E30A2CS
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diode u1G
Abstract: diode 29 SMA Package
Text: SEMICONDUCTOR SMAU1G MARKING SPECIFICATION SMA 1 PACKAGE 1. Marking method Laser Marking 2. Marking U1G 1 2 3 No. Item Marking Polarity Device Name Lot No. 2007. 7. 26 Revision No : 0 Description Bar Cathode U1G SMAU1G 7 Year 0~9 : 2000~2009 29 Week 29 : 29th Week
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ZP33A
Abstract: TZP33A zp 33a 1n9638 zp 278 1N52438 TZP10A MTZJ 188 MTZJ 248 1N6233
Text: Part Marking <Switching Diodes <Rectifier Diodes> <SchoHky Barrier Diodes) 00-4KQ SR) Part No. Part No. Marking Marking ;«tn Marking < Z en er D io d es> Marking DO-34 MSO) RB441Q Marking DO-35<a8D) I; U RB721Q Black = t¿ n > = M M8R DO-340USD] li ,=tftl>=
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00-4KQ
DO-34
RB441Q
RB721Q
DO-340USD]
RB100A
T0220FP
RB015T-40
R8026T-40
1N4146
ZP33A
TZP33A
zp 33a
1n9638
zp 278
1N52438
TZP10A
MTZJ 188
MTZJ 248
1N6233
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