Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LBCX70GLT1G LBCX70JLT1G LBCX70KLT1G Featrues Pb-Free Package is Available. Ordering Information Device Marking LBCX70GLT1G LBCX70GLT3G LBCX70JLT1G LBCX70JLT3G LBCX70KLT1G AG AG AJ AJ AK Shipping
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LBCX70GLT1G
LBCX70JLT1G
LBCX70KLT1G
LBCX70GLT3G
LBCX70JLT3G
3000/Tape
10000/Tape
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BCX70G
Abstract: BCX70H BCX70J BCX70K SMD AJ aj smd npn
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ
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OT-23
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
C-120
BCX70H
BCX70K
SMD AJ
aj smd npn
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ
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OT-23
BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
C-120
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BCW60
Abstract: BCX70
Text: BCW60 BCX70 SMALL SIGNAL NPN TRANSISTORS Type Marking BCW 60A AA BCW 60B AB BCW 60C AC BCX70G AG BCX70H AH BCX70J AJ 2 3 • ■ ■ ■ SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW LEVEL AF AMPLIFICATION AND
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BCW60
BCX70
BCX70G
BCX70H
BCX70J
BCW61
BCX71
OT-23
BCX70
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marking AJ 7
Abstract: murata SAW
Text: SAW FILTER FOR SCDMA400 Rx Murata part number : SAFES405MFL0F00 Package Dimensions Specification Item 2.0±0.1 Insertion Loss 400 to 410 MHz Dot Marking(φ0.3) (0.2) 2-0.70±0.05 2-0.35±0.05 (4) 8-0.40±0.05 (C0.15) (1) (2) (3) (0.075) 8-0.325±0.050 (9) (8) (7)
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SCDMA400
SAFES405MFL0F00
SWR11
SWR22
marking AJ 7
murata SAW
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AYWW marking code IC
Abstract: marking AJ 7 88XXXXX
Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC-8 NB CASE 751-07 ISSUE AJ 8 1 SCALE 1:1 DATE 19 SEP 2007 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION.
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amphenol 74868
Abstract: SO-239 drawing SO239 74868 4880-3
Text: 83-1R NOTES: 1. 0.718 MATERIALS AND FINISHES: BODY - ZINC DIE CAST, NICKEL PLATING CONTACT - BRASS, SILVER PLATING INSULATOR - PBT POLYESTER REVISIONS REV DRAWING NO. - THIRD ANGLE PROJ. DESCRIPTION DATE ECO REDRAWN TO PRO-E, ADD COD 7/14/11 48601 RELEASE TO MFG.
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83-1R
83-1R,
83-1R
SO-239A"
11-Jun-09
10-Jun-81
/83-1R
SO-239/A
amphenol 74868
SO-239 drawing
SO239
74868
4880-3
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P12O
Abstract: No abstract text available
Text: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC
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2002/95/EC
11-Mar-11
P12O
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Untitled
Abstract: No abstract text available
Text: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC
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2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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P12O
Abstract: No abstract text available
Text: P12 www.vishay.com Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
P12O
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P12O
Abstract: No abstract text available
Text: P12 Vishay Sfernice Fully Sealed Container Cermet Potentiometer Military and Professional Grade FEATURES • 1 W at 70 °C • Cermet element • Test according to CECC 41000 or IEC 60393-1 • Full sealing P12Q P12T • Mechanical strength P12O • Compliant to RoHS Directive 2002/95/EC
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2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
P12O
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3164165
Abstract: TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805
Text: HYB 3164 5 400/5 AJ/AT -40/-50/-60 64M x 4 - Bit Dynamic RAM HYB 3164(5)800/5 AJ/AT -40/-50/-60 8M x 8 - Bit Dynamic RAM HYB 3164(5,6)160/5 AT -40/-50/-60 4M x 16 -Bit Dynamic RAM INFORMATION NOTE 64M - Bit DYNAMIC MEMORIES (Second Generation) General Information
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Info64M3
64M-Bit
HYB3164
400/800/160AJ/AT
405/805/165AJ/AT
400mil
SOJ-24
3164165
TSOP-II-32
GPJ05855
hyb3165165
cmos dram 8m x 16
TSOPII-50
3165165AT
64M-DRAM
marking AJ 7
3164805
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P13L
Abstract: No abstract text available
Text: P13L Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N 1 million cycles for bushing T, Q, O, and P High power rating 1.5 W at 70 °C Test according to CECC 41000 or IEC 60393-1
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2002/95/EC
P13LT
11-Mar-11
P13L
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P13L
Abstract: No abstract text available
Text: P13L www.vishay.com Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N • 1 million cycles for bushing T, Q, O, and P • High power rating 1.5 W at 70 °C • Test according to CECC 41000 or IEC 60393-1
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
P13L
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|
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P13L
Abstract: No abstract text available
Text: P13L www.vishay.com Vishay Sfernice Long Life Cermet Potentiometer up to 2 Million Cycles FEATURES • 2 million cycles for bushing L and N • 1 million cycles for bushing T, Q, O, and P • High power rating 1.5 W at 70 °C • Test according to CECC 41000 or IEC 60393-1
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2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
P13L
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QW030BK1
Abstract: v02 mark FLTR100V10 FLTR100V20 QW030BK QW030CL1 QW030AJ1 ADS01
Text: Data Sheet October 2008 QW030xx DUAL Series Power Modules: dc-dc Converters; 18 Vdc to 36 Vdc or 36 Vdc to 75 Vdc Inputs Features n The QW030-Series Power Modules use advanced, surfacemount technology and deliver high-quality, efficient, and compact dc-dc conversion.
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QW030xx
QW030-Series
ADS01-046EPS
ADS01-045EPS)
QW030BK1
v02 mark
FLTR100V10
FLTR100V20
QW030BK
QW030CL1
QW030AJ1
ADS01
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Untitled
Abstract: No abstract text available
Text: CDIIL BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 3 2.6 Pin configuration 2.4 1 = QASE
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70J
23A33T4
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Untitled
Abstract: No abstract text available
Text: BCX70G BCX70H BCX70J BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistore Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _3.0_ 2.8 0.14 0.09 0.48 0.38 0.70 0.50 3 Pin configuration 1 = BASE
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
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BCX70G
Abstract: BCX70H BCX70J BCX70K
Text: BCX70G BCX70H BCX70J BCX70K CDU SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N Silicon transistors Marking BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 i l 0.38 [I3 * I I I« 2.6 Pin configuration
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BCX70G
BCX70H
BCX70J
BCX70K
BCX70G
BCX70H
BCX70J
23A33T4
BCX70K
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Untitled
Abstract: No abstract text available
Text: L BCX70G BCX70H BCX7ÓJ BCX70K SILICON PLANAR EPITAXIAL TRANSISTORS N -P -N silicon transistors Marking PACKAGE O UTLINE DETAILS A LL DIM ENSIONS IN m m BCX70G = AG BCX70H = AH BCX70J = AJ BCX70K = AK 3.0_ 2.8 0.14 0.46 038 3 Pin configuration 1 = BASE 2 = EMITTER
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BCX70G
BCX70H
BCX70K
BCX70G
BCX70J
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Untitled
Abstract: No abstract text available
Text: Transistor, NPN 2SD1782K Features • available in SMT3 SMT, SC-59 package • package marking: 2SD1782K; AJ-fr, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.2 V at lc/lB =0.5 A/50 mA • high breakdown voltage BV qeo =
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2SD1782K
SC-59)
2SD1782K;
2SB1198K
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KA-59-185
Abstract: marking AJ 7 EAJ06
Text: DASH NO. M CODE MADE FROM STAMP; 380-10044-501 82918 7/16-28 UNEF-2B THREAD REVISIONS GSD ER 28592 AJ 01/21/87 I cn CN 29041 A CO I EAJ 06/25/87 5o cn CN 29966 A I JCA 06/29/88 o CN 32648 A WJM 10/31/90 CN 33220 C KH 08/16/91 CN 38728 E BDH 12/03/02 0.040 REF.
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214/U,
BA-6903
CP-5402.
KTH-2079.
KA-59-185
MIL-STD-348,
KA-59-185-MC7
ASTM-B-194
ASTM-D-4894
marking AJ 7
EAJ06
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MIL-C-45204
Abstract: KA-59-185 EAJ06 Boeing KA-59-185-MC7
Text: DASH NO. M CODE MADE FROM STAMP: 380-10044-501 82918 7/16-28 UNEF-2B THREAD GSD R E V IS IO N S >• I cn ER 28592 AJ 01/21/87 CN 29041 A CO I EAJ oo cn 06/25/87 CN 29966 A I JCA 06/29/88 o CN 32648 A WJM 10/31/90 CN 33220 C KH 08/16/91 CN 38728 E BDH 12/03/02
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214/U,
BA-6903
CP-5402.
KTH-2079.
KA-59-185
MIL-STD-348,
KA-59-185-MC7
ASTM-B-194
MIL-C-45204
EAJ06
Boeing
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MARKING aep
Abstract: No abstract text available
Text: ' t y y ÿ ' f # —K : Outline Drawings SCHOTTKY BARRIER DIODE • 4 # f i ’ Features • l&Vc Lo w V f ■ : Super high speed sw itchin g. »aft 1 J» >1 ■K 1 ? High reliability by planer design. • Marking 9 oi 3 W :ft5m m b'7f S KM A «TBI WiH^nW
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OCR Scan
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I95t/R89)
Shl50
MARKING aep
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