MARKING A4 TRANSISTORS Search Results
MARKING A4 TRANSISTORS Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel |
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LBAV70WT1G 3000/Tape LBAV70WT3G 10000/Tape | |
sot23 marking y5
Abstract: BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6
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OT-23 BAL99 BZX84-C43 BAR99 BZX84-C47 BAS16 FMMD914 BAV70 FMMD6050 BAV74 sot23 marking y5 BZX84C18 FMMD914 FMMD6050 BZX84-C27 BAR99 MARKING W4 sot 23 C3V9 C5V1 c5v6 | |
DSAFG01Contextual Info: DSAFG01 Tentative page Total pages DSAFG01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : ML3-N4-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) |
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DSAFG01 DSAFG01 | |
DSA4G01Contextual Info: DSA4G01 Tentative Total pages page DSA4G01 Silicon PNP epitaxial planar type For High-frequency Amplifier Marking Symbol A4 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open) |
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DSA4G01 DSA4G01 | |
Contextual Info: DSA3G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification DSA9G01 in SSSMini3 type package • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 |
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DSA3G01 DSA9G01 UL-94 DSA3G0100L | |
Contextual Info: DSA3G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification DSA9G01 in SSSMini3 type package • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 |
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DSA3G01 DSA9G01 UL-94 DSA3G0100L | |
Contextual Info: DSA9G01 Silicon NPN epitaxial planar type For high-frequency amplification DSA5G01 in SSMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 |
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DSA9G01 DSA5G01 UL-94 DSA9G01Ã | |
Contextual Info: DSA5G01 Silicon PNP epitaxial planar type For high-frequency amplification DSA2G01 in SMini3 type package Unit: mm • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 |
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DSA5G01 DSA2G01 UL-94 DSA5G01Ã | |
Contextual Info: DSA2G01 Silicon PNP epitaxial planar type Unit: mm For high-frequency amplification • Features High transition frequency fT Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant Marking Symbol: A4 Packaging DSA2G01x0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard) |
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DSA2G01 UL-94 DSA2G01Ã | |
Contextual Info: EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A Transistors General purpose dual digital transistors EMA4 / UMA4N / EMB4 / UMB4N / UMB8N / FMA4A / IMB4A !Feature 1) Two DTA114T chips in a EMT or UMT or SMT package. !Equivalent circuits EMA4 / UMA4N (3) |
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DTA114T SC-88 SC-74A SC-74 | |
DTA114T
Abstract: T110 T148
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DTA114T SC-88 SC-74 SC-74A T110 T148 | |
marking a4
Abstract: DTA114T T108 T110 T148 marking B8 FMA4 marking a4 transistors
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DTA114T SC-88 SC-74 SC-74A marking a4 T108 T110 T148 marking B8 FMA4 marking a4 transistors | |
TN3000
Abstract: MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors
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120mW DTA114T 96-411-C114T) TN3000 MARKING A4 transistor MARKING T108 inverter ic marking H.A SMT6 T108 G7 marking Code marking tA2 marking a4 transistors | |
"MARKING CODE A4"
Abstract: DTA114T T148
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DTA114T "MARKING CODE A4" T148 | |
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marking CJD
Abstract: A6 marking MRF947t1 marking 6B
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SC-70/SQT-323 MRF947T1 MRF947BT1 MRF957T1 MUN5211T1 MUNS212T1 MUN5213T1 MUN5214T1 MUN5111T1 MUN5112T1 marking CJD A6 marking marking 6B | |
Contextual Info: Transistors SMD Type N-Channel 30-V D-S MOSFET KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source |
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KI2304DS OT-23 | |
Contextual Info: Transistors IC SMD Type Product specification KI2304DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source |
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KI2304DS OT-23 | |
smd marking 58a
Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
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KO3404 OT-23 smd marking 58a smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL | |
FMA4AContextual Info: EMA4 / UMA4N / FMA4A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 10kW IC(MAX.) R1 EMT5 UMT5 (3) (5) (1) (4) (2) (5) EMA4 (SC-107BB) with complete isolation to allow negative biasing |
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-100mA -100mA SC-107BB) OT-353 SC-88A) DTA114T R1120A FMA4A | |
jd 1803
Abstract: otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10
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2SA1774 2SA1821 2SA1885 2SC4617 2SC4618 2SC4619 2SC4649 2SC4725 2SC4726 2SC4997 jd 1803 otc114 E2p 93 transistor 2SD1834 B14A DTC143YKA DTC143ZKA transistor marking w9 2SA1690 UMW10 | |
Contextual Info: EMA4 / UMA4N / FMA4A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) -50V -100mA 10kW (2) (1) (4) (4) (1) (2) (5) (3) EMA4 (SC-107BB) SMT5 UMA4N SOT-353 (SC-88A) |
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-100mA -100mA SC-107BB) OT-353 SC-88A) DTA114T R1120A | |
EMA4Contextual Info: EMA4 / UMA4N / FMA4A PNP -100mA -50V Complex Digital Transistors Bias Resistor Built-in Transistors Datasheet lOutline Parameter VCEO IC(MAX.) R1 Tr1 and Tr2 EMT5 UMT5 (3) (5) -50V -100mA 10kW (2) (1) (4) (4) (1) (2) (3) (5) EMA4 (SC-107BB) SMT5 UMA4N SOT-353 (SC-88A) |
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-100mA SC-107BB) OT-353 SC-88A) DTA114T R1120A EMA4 | |
marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p | |
marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
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1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 |