a3s marking
Abstract: DSA4005
Text: Tentative DSA4005 Total pages page DSA4005 Silicon PNP epitaxial planar type For general amplifier Marking Symbol : A3 Package Code : NS-B1-B-B Absolute Maximum Ratings Ta = 25 °C Parameter Collector-base voltage Emitter open Collector-emitter voltage (Base open)
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DSA4005
a3s marking
DSA4005
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Untitled
Abstract: No abstract text available
Text: RF2043 • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment
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RF2043
RF2043
6000MHz.
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RF Transistor Selection
Abstract: No abstract text available
Text: RF2046 Preliminary • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment
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RF2046
RF2046
3000MHz.
3e-05GHz
RF Transistor Selection
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BE 187 TRANSISTOR
Abstract: 482 transistor on BE 187 TRANSISTOR
Text: RF2047 Preliminary • Broadband, Low Noise Gain Blocks • Final PA for Low Power Applications • IF or RF Buffer Amplifiers • High Reliability Applications • Driver Stage for Power Amplifiers • Broadband Test Equipment
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RF2047
RF2047
6000MHz.
BE 187 TRANSISTOR
482 transistor
on BE 187 TRANSISTOR
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TSDF1205R
Abstract: TSDF1205
Text: TSDF1205/TSDF1205R Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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TSDF1205RW
Abstract: a3 sot 343 TSDF1205W
Text: TSDF1205W/TSDF1205RW Silicon NPN High Frequency Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain performance at UHF, VHF and microwave frequencies.
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TSDF1205W/TSDF1205RW
TSDF1205W
TSDF1205RW
D-74025
28-Oct-97
a3 sot 343
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BFR93
Abstract: bfr93R marking amplifier j02 transistor BFR93 682 MARKING SOT-23 marking A3 amplifier
Text: BFR93/BFR93R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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BFR93/BFR93R
BFR93
BFR93R
D-74025
31-Oct-97
marking amplifier j02
transistor BFR93
682 MARKING SOT-23
marking A3 amplifier
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BFR93A application board
Abstract: Temic 3 x 7 597 telefunken diodes 914 Temic Semiconductors bfr93a BFR93A BFR93AR 682 MARKING SOT-23
Text: BFR93A/BFR93AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D High transition frequency D Low noise figure 1 1 13 581 13 581
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BFR93A/BFR93AR
BFR93A
BFR93AR
D-74025
31-Oct-97
BFR93A application board
Temic 3 x 7 597
telefunken diodes 914
Temic Semiconductors bfr93a
682 MARKING SOT-23
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"marking E1"
Abstract: BFS17R BFS17 d 1556 transistor
Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1
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BFS17/BFS17R
BFS17
BFS17R
D-74025
16-Oct-97
"marking E1"
d 1556 transistor
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BFR92
Abstract: BFR92R temic 475 486 5000
Text: BFR92/BFR92R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure D High transition frequency
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BFR92/BFR92R
BFR92
BFR92R
D-74025
31-Oct-97
temic 475 486 5000
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BFS17A
Abstract: BFS17AR
Text: BFS17A/BFS17AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator applications. Features
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BFS17A/BFS17AR
BFS17A
BFS17AR
D-74025
31-Oct-97
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silicon npn planar rf transistor sot 143
Abstract: 556 national BFR92A BFR92AR BFR92A P2 Microelectronic sot 236 CB
Text: BFR92A/BFR92AR Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Wide band amplifier up to GHz range. Features D High power gain D Low noise figure D High transition frequency 1 1 13 581 13 581
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BFR92A/BFR92AR
BFR92A
BFR92AR
D-74025
31-Oct-97
silicon npn planar rf transistor sot 143
556 national
BFR92A P2
Microelectronic
sot 236 CB
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j4313-o
Abstract: NPN Transistor 2sc5242 J4313 c5242o J4313R J4313O c5242 C5242-O 2sc5242 transistor 2SC5242RTU
Text: 2SC5242/FJA4313 NPN Epitaxial Silicon Transistor Applications • High-Fidelity Audio Output Amplifier • General Purpose Power Amplifier Features • • • • • • • • • High Current Capability: IC = 15A High Power Dissipation : 130watts High Frequency : 30MHz.
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2SC5242/FJA4313
130watts
30MHz.
2SA1962/FJA4213.
--TO264
2SC5200/FJL4315
--TO220
FJP5200
--TO220F
FJPF5200
j4313-o
NPN Transistor 2sc5242
J4313
c5242o
J4313R
J4313O
c5242
C5242-O
2sc5242 transistor
2SC5242RTU
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TL 555c
Abstract: JESD22-A114-A JESD78
Text: NLU1GU04 Single Unbuffered Inverter The NLU1GU04 MiniGatet is an advanced high-speed CMOS unbuffered inverter in ultra-small footprint. This device is well suited for use in oscillator, pulse-shaping and high input impedance amplifier applications. For digital applications,
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NLU1GU04
NLU1GU04
517AA
613AD
613AE
613AF
TL 555c
JESD22-A114-A
JESD78
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marking PA SOT23-6
Abstract: sot23-6 package marking PA marking A3 amplifier 4 pin GSM1800 RF2367 RF2367PCBA-41X marking s22 sot23-6 marking A3 amplifier
Text: RF2367 PCS CDMA/TDMA/GSM1800 3V PA DRIVER AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications • TDMA/CDMA/FM PCS Tx Amplifier • GSM1800 Driver Amplifier • Low Noise Transmit Driver Amplifier • General Purpose Amplification • 2.4GHz WLAN Systems
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RF2367
CDMA/TDMA/GSM1800
GSM1800
RF2367
1700MHz
2000MHz.
marking PA SOT23-6
sot23-6 package marking PA
marking A3 amplifier 4 pin
RF2367PCBA-41X
marking s22 sot23-6
marking A3 amplifier
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a3 sot 343
Abstract: No abstract text available
Text: T fmtt T S D F 1 2 0 5 W / T S D F 1 2 0 5 R W Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain
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TSDF1205W
TSDF1205RW
D-74025
28-Oct-97
a3 sot 343
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Untitled
Abstract: No abstract text available
Text: T fmtt TSDF1205/TSDF1205R Semiconductors Silicon NPN High Frequency Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and small-signal low-power amplifiers. This transistor has superior noise figure and assosiated gain
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TSDF1205/TSDF1205R
TSDF1205
TSDF1205R
D-74025
28-Oct-97
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transistor BFR93
Abstract: No abstract text available
Text: Temic BFR93/BFR93R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR93/BFR93R
BFR93
BFR93R
D-74025
31-Oct-97
transistor BFR93
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BFR93A
Abstract: marking A3 amplifier case 449 S parameters of BFR93AR GHz transistor
Text: T e m ic BFR93A/BFR93AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • • High power gain High transition frequency
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BFR93A/BFR93AR
BFR93A
BFR93AR
D-74025
31-Oct-97
marking A3 amplifier case 449
S parameters of BFR93AR GHz transistor
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ML 1557 b transistor
Abstract: No abstract text available
Text: T e m ic BFS17/BFS17R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package l R E1— 1
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BFS17/BFS17R
BFS17
BFS17R
Vattk25
D-74025
16-Oct-97
ML 1557 b transistor
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706 TRANSISTOR sot-23
Abstract: No abstract text available
Text: T r lu i r BFR92A/BFR92AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications Wide band amplifier up to GHz range. Features • High power gain • Low noise figure •
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BFR92A/BFR92AR
BFR92A
BFR92AR
D-74025
31-Oct-97
706 TRANSISTOR sot-23
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Untitled
Abstract: No abstract text available
Text: Temic BFS17A/BFS17AR S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications W ide-band, low noise, small signal amplifiers up to UHF frequencies, high speed logic applications and oscillator ap
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BFS17A/BFS17AR
BFS17A
BFS17AR
D-74025
31-Oct-97
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SOT-23 marking 717
Abstract: un 1044 Telefunken u 257
Text: Temic BFR92/BFR92R S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications RF-amplifier up to GHz range specially for wide band antenna amplifier. Features • High power gain
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BFR92/BFR92R
BFR92
BFR92R
D-74025
31-Oct-97
SOT-23 marking 717
un 1044
Telefunken u 257
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Untitled
Abstract: No abstract text available
Text: Semiconductor FUS3881 CMOS Chopper Stabilized, Hall-Effect Sensor Latch 2.2V-18V Features □ Optimized for BCD Motor Application □ □ □ □ Operating Voltage Range: 2.2V to 18V CMOS Device for Optimal Stability Chopper Stablized: No Amplifier Offset
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FUS3881
V-18V
SQT23
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