P6SBMJ24A
Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current
|
Original
|
PDF
|
A40CA
5SCMJ120CA
5SCMJ130CA
5SCMJ150CA
5SCMJ160CA
5SCMJ170CA
5SCMJ180CA
5SCMJ200CA
P6SBMJ24A
B17C
B14A
A17a
B14A equivalent
MARKING A19c
marking A32A
P4SSMJ24A
A12A
a32a
|
B14A equivalent
Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse
|
Original
|
PDF
|
11ACE
TVSP05PT
OT-23
LTVSJ12ESPT
LTVSJ15ESPT
SC-79
B14A equivalent
zener b14a
P6SBMJ24A
B17C
tvs2315pt
TVSS5VESPT
diode B14A
B14A zener equivalent
A17a
P4SSMJ24A
|
Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16 54
|
Original
|
PDF
|
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
1Mx32,
|
Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
|
Original
|
PDF
|
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32
single120
HIP-66
|
EN29SL160
Abstract: cFeon EN
Text: EN29SL160 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all
|
Original
|
PDF
|
EN29SL160
EN29SL160
cFeon EN
|
AS8FLC1M32BQT-120/Q
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
|
Original
|
PDF
|
AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
AS8FLC1M32BQT-120/Q
|
Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
|
Original
|
PDF
|
AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
|
Untitled
Abstract: No abstract text available
Text: FLASH AUSTIN SEMICONDUCTOR, INC. AS8FLC1M32 Austin Semiconductor, Inc. FIGURE 1: PIN ASSIGNMENT Top View • • • • • • • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 76 15 55 16
|
Original
|
PDF
|
AS8FLC1M32
100ns
120ns
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
|
EN29LV160BT
Abstract: cFeon EN29LV160BB EN29LV160BB cFeon EN29LV160 cFeon EN29LV160B cFeon Flash chip
Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
|
Original
|
PDF
|
EN29LV160B
EN29LV160BT
cFeon EN29LV160BB
EN29LV160BB
cFeon EN29LV160
cFeon
EN29LV160B
cFeon Flash chip
|
Untitled
Abstract: No abstract text available
Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
|
Original
|
PDF
|
EN29LV160B
|
Untitled
Abstract: No abstract text available
Text: FLASH PRELIMINARY AS8FLC1M32A Hermetic, Multi-Chip Module MCM FIGURE 1: PIN ASSIGNMENT (Top View) • OPTION Access Speed 70ns 90ns 100ns 120ns MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 59
|
Original
|
PDF
|
AS8FLC1M32A
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
|
cFeon EN29LV160BB
Abstract: cfeon en29lv160bt EN29LV160BT EN29LV160BB cFeon F
Text: EN29LV160B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
|
Original
|
PDF
|
EN29LV160B
cFeon EN29LV160BB
cfeon en29lv160bt
EN29LV160BT
EN29LV160BB
cFeon F
|
Untitled
Abstract: No abstract text available
Text: FLASH AS8FLC1M32 • • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10
|
Original
|
PDF
|
AS8FLC1M32
MIL-PRF-38534,
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
AS8FLC1M32B
|
SMD MARKING CODE WE3
Abstract: 5962-0920503HXA A18 marking A3760 5962-0920502HYA 5962-0920503HX
Text: FLASH AS8FLC1M32 • • • • • • OPTION Access Speed 70ns* 90ns 100ns 120ns *Contact factory MARKING -70 -90 -100 -120 61 62 63 64 65 66 67 68 01 02 03 04 05 06 07 57 14 76 I/O5 I/O6 I/O7 GND I/O8 I/O9 15 55 16 54 17 53 18 52 19 51 20 50 I/O10 I/O11
|
Original
|
PDF
|
AS8FLC1M32
I/O10
I/O11
I/012
I/O13
I/O14
I/O15
I/O16
I/O17
I/O18
SMD MARKING CODE WE3
5962-0920503HXA
A18 marking
A3760
5962-0920502HYA
5962-0920503HX
|
|
S71GL-N
Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
Text: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and
|
Original
|
PDF
|
S71PL-J
S71GL-A
S71GL-N
S71PL-J.
Flash Memory Product Selector Guide
MARKING 9B ME
S29PL127J
S71PL032J40
S71PL256N
PSRAM
A20-A18
sram 256mb 64X
|
S71PL256N
Abstract: top mark e5 S29PL127J S71GL-N S71PL032J40 S71PL-J TSB064-64-ball 16SRAM
Text: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and
|
Original
|
PDF
|
S71PL-J
S71GL-A
S71GL-N
S71PL-J.
256M/128/64/32
S71PL256N
top mark e5
S29PL127J
S71PL032J40
TSB064-64-ball
16SRAM
|
A17a
Abstract: diode A14A a43a SMA33CA A6.5CA SMA12CA a13a A45A A78A A18A marking
Text: P4SMA series Compact Technology Peak power dissipation Breakdown Voltage Transient Voltage Suppressors 400W 5.0~ 190V SMA FEATURES Constructed with Glass Passivated Die Low inductance Excellent clamping capability Uni and bidirectional unit Very fast response time
|
Original
|
PDF
|
2002/95/EC
A17a
diode A14A
a43a
SMA33CA
A6.5CA
SMA12CA
a13a
A45A
A78A
A18A marking
|
sram 256mb 64X
Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
|
Original
|
PDF
|
S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
sram 256mb 64X
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL256N
S71PL127J
|
transistor w048
Abstract: A31b SOT-23 sot-23-5 code 9L a32b R3111Q271 R3111N402
Text: R3111x SERIES LOW VOLTAGE DETECTOR NO.EA-056-130722 OUTLINE The R3111x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.
|
Original
|
PDF
|
R3111x
EA-056-130722
Room403,
Room109,
10F-1,
transistor w048
A31b SOT-23
sot-23-5 code 9L
a32b
R3111Q271
R3111N402
|
MICRON mcp
Abstract: 31136 S71NS064JA0 S71NS128JA0
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
|
Original
|
PDF
|
S71NS128JA0/S71NS064JA0
16-Bit)
31136A1
MICRON mcp
31136
S71NS064JA0
S71NS128JA0
|
31136
Abstract: S71NS064JA0 spansion top marking am29lv S71NS128JA0 NF16-NF19 S99DCNLB044MSA002
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM Distinctive Characteristics
|
Original
|
PDF
|
S71NS128JA0/S71NS064JA0
16-Bit)
31136A2
31136
S71NS064JA0
spansion top marking am29lv
S71NS128JA0
NF16-NF19
S99DCNLB044MSA002
|
31136
Abstract: S71NS064JA0BFW21
Text: S71NS128JA0/S71NS064JA0 Stacked Multi-Chip Product MCP 128 Megabit (8 M x 16-Bit) and 64 Megabit (4 M x 16-Bit), 110 nm CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memories with 16 Megabit (1M x 16-Bit) pSRAM PRELIMINARY Datasheet Distinctive Characteristics
|
Original
|
PDF
|
S71NS128JA0/S71NS064JA0
16-Bit)
Am29F
Am29LV
31136A3
31136
S71NS064JA0BFW21
|
transistor marking A21
Abstract: No abstract text available
Text: Renesas LSIs Preliminary M6MGB/T64BS8BWG-P Notice: This is not a final specification. Some parametric limits are subject to change. 67,108,864-BIT 4,194,304-WORD BY 16-BIT CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT) CMOS SRAM Stacked-CSP (Chip Scale Package)
|
Original
|
PDF
|
M6MGB/T64BS8BWG-P
864-BIT
304-WORD
16-BIT)
608-BIT
288-WORD
M6MGB/T64BS8BWG-P
64M-bit
67-pin
transistor marking A21
|
C55-C57
Abstract: E491 C-491
Text: 10 VIEW ON MATING SIDE ROW 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 E B B B B B B B B B B B B D B B B C B B B B B B B B B B B B B B B B A B B B B B B B B B B B B L1 B CONTACTI 5.75 L2 QUAN. 4.30 114 22 23 u B B B B B B B B B B B B B B B 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 d6 57 58 59 60 61 62 63 64 65 66 PIN
|
OCR Scan
|
PDF
|
SD-85801-008
PS-85801-002
SD-85801-
C55-C57
E491
C-491
|