MARKING A18A Search Results

J239

Abstract: spansion marking date code S29CL-J spansion date code marking jv3 Marking Fab25 JV3 diode marking P53 Marking information diode Marking code jv3 f
Contextual Info: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in

spansion marking date code

Abstract: J239 OUTPUT SORT CIRCUIT PROTECTION spansion date code marking transistor marking 1f C80H S29CD016J S29CL-J spansion marking
Contextual Info: S29CD-J/S29CL-J Electronic Marking S29CD016J/S29CL016J Only Supplement This document includes details of the electronic marking information that is stored and locked in the one-time-programmable OTP region of S29CD-J/S29CL-J devices. Note: Currently this document only applies to the S29CD016J/S29CL016J. Other S29CD-J/S29CL-J devices may be added in

P6SBMJ24A

Abstract: B17C B14A A17a B14A equivalent MARKING A19c marking A32A P4SSMJ24A A12A a32a
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Break Down Voltage VBR V @ IZT Test Current Min Nom Max Volts Volts Volts @IT Working Peak Reverse Voltage Maximum Reverse Leakage Current Maximum Reverse Current

B14A equivalent

Abstract: zener b14a P6SBMJ24A B17C tvs2315pt TVSS5VESPT diode B14A B14A zener equivalent A17a P4SSMJ24A
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 Zener Voltage VZ V @ IZT TYPE Test current Working Peak Reverse Voltage IZT(mA) Vrwm(V) Marking Min Nom Max Volts Volts Volts Maximum Maximum Maximum Reverse reverse Reverse

wlga

Abstract: EN29SL800 cFeon 250
Contextual Info: EN29SL800 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all

EN29LV040A-70

Abstract: EN29LV040A EN29LV040 cFeon
Contextual Info: EN29LV040A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

en29lv800c

Contextual Info: EN29LV800C Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: EN29LV800C Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

EN29LV800C

Abstract: cFeon
Contextual Info: EN29LV800C Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: EN29LV040A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

cFeon EN

Contextual Info: EN29LV040A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the

Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/pSRAM Data Sheet (Advance Information)

S71GL-N

Abstract: Flash Memory Product Selector Guide MARKING 9B ME S29PL127J S71PL032J40 S71PL-J S71PL256N PSRAM A20-A18 sram 256mb 64X
Contextual Info: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and

S71PL256N

Abstract: top mark e5 S29PL127J S71GL-N S71PL032J40 S71PL-J TSB064-64-ball 16SRAM
Contextual Info: S71PL-J Based MCPs Data Sheet Retired Product S71PL-J Based MCPs Cover Sheet This product has been retired and is not recommended for new designs. For new designs, S71GL-A or S71GL-N supersedes S71PL-J. Please contact your local Spansion sales office to determine the appropriate migration device, specifications, and

SC472M

Abstract: LK ac 472m uk ac 472m sd472m sc 472m 472M 2kv 222K 1KV E154171 222 2kv swc E 472M 2KV
Contextual Info: Ceramic Type Introduction S A M W H A d is c c e ra m ic c a p a c ito rs a re d e s ig n e d an d p ro d u c te d to o ffe r th e u se r c a p a c ito rs w ith high re liab ility an d sm all size. With w id e se le ctio n of te m p e ra tu re ch aracte ristics an d v o lta g e ratings, th e u se r can m a k e u se fo r in v a rio u s

sram 256mb 64X

Abstract: S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL-J S71PL256N S71PL127J
Contextual Info: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM

transistor w048

Abstract: A31b SOT-23 sot-23-5 code 9L a32b R3111Q271 R3111N402
Contextual Info: R3111x SERIES LOW VOLTAGE DETECTOR NO.EA-056-130722 OUTLINE The R3111x series are CMOS-based voltage detector ICs with high detector threshold accuracy and ultra-low supply current, which can be operated at an extremely low voltage and is used for system reset as an example.

Mitsubishi Stacked CSP

Abstract: mitsubishi marking
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

AMD marking CODE flash

Abstract: A18A marking AM29BDD160GB CR10 flash memory application bd160gb54d
Contextual Info: Interfacing Motorola’s MPC56x Microcontroller to AMD’s Am29BDD160G Flash Memory Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ

MARKING CODE LT DO-214AC

Abstract: marking 15C SMA TVS IEC801-2 IEC801-4 P4SMA10CA P4SMA220CA p4sma75a
Contextual Info: P4SMA6.8A thru P4SMA220CA 5YMSEMI semicomductor Surface Mount Transient Voltage Suppressors Peak Pulse Power 400W Breakdown Voltage 6.8 to 220V Features_ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ P la s tic pa cka g e has U n d e rw rite rs L a b o ra to ry F lam m a bility

aa11

Abstract: marking A00
Contextual Info: ADVANCE INFORMATION GALVANTECH, INC. GVT71512D36 512K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 512K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family

CR10

Contextual Info: Increased Clock Speeds and Faster Initial Burst Access on Am29BDD160G Application Note -XO\  7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ

atmel part marking c16

Abstract: AC97 ARM926EJ-S AT91CAP9S250A AT91CAP9S500A ISO7816 Manchester CODING DECODING FPGA
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions, ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer – 220 MIPS at 200 MHz

AC97

Abstract: ARM926EJ-S AT91CAP9S250A AT91CAP9S500A ISO7816 AT91CAP9S250A-CJ Manchester CODING DECODING FPGA 324BGA
Contextual Info: Features • Incorporates the ARM926EJ-S ARM Thumb® Processor • • • • • • • • • • – DSP Instruction Extensions, ARM Jazelle® Technology for Java® Acceleration – 16 Kbyte Data Cache, 16 Kbyte Instruction Cache, Write Buffer – 220 MIPS at 200 MHz