marking 9D transistor
Abstract: transistor transistor marking 9D KIA79L09F
Text: SEMICONDUCTOR KIA79L09F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 9D KIA79L09F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KIA79L09F
OT-89
marking 9D transistor
transistor
transistor marking 9D
KIA79L09F
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Untitled
Abstract: No abstract text available
Text: PJ04N03D 25V N-Channel Enhancement Mode Field Effect Transistor TO-252 FEATURES • RDS ON ,VGS@10V,I DS@30A=4mΩ • RDS(ON),VGS@5.0V,I DS@24A=6mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers
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PJ04N03D
O-252
2002/95/EC
O-252
MIL-STD-750
04N03D
983A5F
2009-REV
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Untitled
Abstract: No abstract text available
Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features R 492?6=?@C>2==6G6= R I46=6?E82E6492C86IR ;I"\[#AC@5F4E! ' V ;I )( K R -@?>2I.) +&1 Z I; )( 7 R/6CJ=@H@? C6D:DE2?46R ;I"\[#
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IPB04CN10N
IPI04CN10N
IPP04CN10N
492C86à
E2C86Eà
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marking 9D
Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! ' V ;I )( K R - @ ?>2 I.) .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB06CN10N
IPI06CN10N
IPP06CN10N
8976BF6
marking 9D
sd marking 8H
PG-TO220-3
A6c DIODE
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marking 6d
Abstract: IPP04CN10N G diode 6e
Text: IPB04CN10N G IPI04CN10N G IPP04CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K +&1 Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB04CN10N
IPI04CN10N
IPP04CN10N
marking 6d
IPP04CN10N G
diode 6e
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Untitled
Abstract: No abstract text available
Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G 2 Power-Transistor Product Summary Features R 492?6=?@C>2==6G6= R I46=6?E82E6492C86IR ;I"\[#AC@5F4E! ' V ;I )( K R -@?>2I.) -&) Z I; )( 7 R/6CJ=@H@? C6D:DE2?46R ;I"\[#
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IPB05CN10N
IPI05CN10N
IPP05CN10N
492C86à
E2C86Eà
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IPP05CN10N
Abstract: No abstract text available
Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) ' I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#
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IPB05CN10N
IPI05CN10N
IPP05CN10N
8976BF6
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marking 9D
Abstract: 7 segment display RL S5220 marking code AE -transformer BZV49-C51
Text: Sheet No.1/3 Product Specification Type Number : MTM7 6 1 1 0 0 L B F *5 Type Application Structure Outline Absolute Maximum Ratings Item Checked by Applied by S.Miyata M.Fujisawa H.Shidooka Established by Silicon Field Effect Transistors Switching P-Channel MOS Type
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transistor marking 9D
Abstract: marking 9D transistor STA9015SF STC9014SF STA9015
Text: STA9015SF Semiconductor PNP Silicon Transistor Description • General purpose application. • Switching application. Features • Excellent hFE linearity : hFE IC=0.1mA / hFE(IC=2mA) = 0.95(Typ.) • Complementary pair with STC9014SF Ordering Information
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STA9015SF
STC9014SF
OT-23F
KSD-T5C003-000
transistor marking 9D
marking 9D transistor
STA9015SF
STC9014SF
STA9015
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marking 9D
Abstract: marking eb5 diode 1D marking g9 55B5 7865a DIODE Z6 Diode 9H DIODE ED 99 package marking 5f
Text: IPA086N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H 0&. Y" I9 ,- 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPA086N10N3
7865AE5
marking 9D
marking eb5
diode 1D
marking g9
55B5
7865a
DIODE Z6
Diode 9H
DIODE ED 99
package marking 5f
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diode ED 1B
Abstract: marking EB diode 5D j marking
Text: IPB054N06N3 G IPP057N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J -&, Y" 0( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB054N06N3
IPP057N06N3
diode ED 1B
marking EB diode
5D j marking
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Untitled
Abstract: No abstract text available
Text: IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q ' 3 81>>5< >? B=1<<5F5< R , ? >=1H- Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & I9 ( J ,&* Y" )( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z#
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IPB042N10N3
IPI045N10N3
IPP045N10N3
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4b 5c marking
Abstract: PG-TO-263-7
Text: IPB030N08N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B=? D? B4B9F5 1@@<931D9 ? >C V 9H 0( J R 9H"[Z#$YMd +&( Y" I9 .( 6 Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( &
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IPB030N08N3
4b 5c marking
PG-TO-263-7
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marking EB5
Abstract: diode marking eb5 marking G9
Text: IPD122N10N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R , ? >=1H )*&* Y" -1 I 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPD122N10N3
7865AE5
marking EB5
diode marking eb5
marking G9
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IPB027N10N3
Abstract: marking 1D 55B5 Q451 EB5 MARKING marking G9
Text: IPB027N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D & V 9H ( J R 9H"[Z#$YMd *&/ Y" I9 )*( 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q T ? @5B1D9>7 D5=@5B1D
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IPB027N10N3
7865AE5
marking 1D
55B5
Q451
EB5 MARKING
marking G9
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IPB029N06N3G
Abstract: No abstract text available
Text: IPB029N06N3 G Ie\Q IPI032N06N3 G IPP032N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H , & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *&1 Y" *(
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IPB029N06N3
IPI032N06N3
IPP032N06N3
IPB029N06N3G
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d5cd
Abstract: IPI024N06N3 G
Text: IPB021N06N3 G Ie\Q IPI024N06N3 G IPP024N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 R , ? >=1H, & Q @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC I9 .( J *& Y" )*( 6
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IPB021N06N3
IPI024N06N3
IPP024N06N3
d5cd
IPI024N06N3 G
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EIA-556-A
Abstract: transistor package SOT-723 L2SA1365 sot-23 marking 9D sot723 SOT-723 sot23 mark code AE sod-723 marking b marking 9D transistor 33039
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365*LT1G L2SA1365*LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE sat . . FEATURE ● Small collector to emitter saturation voltage.
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L2SA1365
180MHz
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
40KPCS/Inner
EIA-556-A
transistor package SOT-723
sot-23 marking 9D
sot723
SOT-723
sot23 mark code AE
sod-723 marking b
marking 9D transistor
33039
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OC 140 germanium transistor
Abstract: germanium power devices corporation germanium transistors NPN OC 74 germanium transistor HSD879D Germanium Transistor
Text: HI-SINCERITY Spec. No. : HD200203 Issued Date : 1996.07.15 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSD879D SILICON NPN EPITAXIAL TYPE TRANSISTOR Description For 1.5V and 3v electronic flash use. TO-126ML Features • Charger-up time is about 1 ms faster than of a germanium transistor.
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HD200203
HSD879D
O-126ML
183oC
217oC
260oC
OC 140 germanium transistor
germanium power devices corporation
germanium transistors NPN
OC 74 germanium transistor
HSD879D
Germanium Transistor
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EIA-556-A
Abstract: sot-23 marking 9D transistor marking 9D NF 723 L2SA1365 marking A5F application of IC 723 EIA-556A H SOD723
Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor L2SA1235FLT1G DESCRIPTION L2SA1365FLT1G is a mini package silicon PNP epitaxial transistor, it is designed for low frequency voltage application. . 3 FEATURE ● Small collector to emitter saturation voltage.
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L2SA1235FLT1G
L2SA1365FLT1G
195mm
150mm
10Reel/Inner
30KPCS/Inner
3000PCS/Reel
40KPCS/Inner
OT-723
EIA-556-A
sot-23 marking 9D
transistor marking 9D
NF 723
L2SA1365
marking A5F
application of IC 723
EIA-556A
H SOD723
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2sk2013 2SJ313
Abstract: transistor marking 9D
Text: TOSHIBA 2SJ313 TOSHIBA FIELD EFFECT TRANSISTOR 1 SILICON P CHANNEL MOS TYPE <; I mm 3 mm m 1 3 m mm AUDIO FREQUENCY PO W ER AM PLIFIER APPLICATION • • • High Breakdown Voltage : V d SS—_ 180V High Forward Transfer Admittance : |Yfs| = 0.7S Typ. Complementary to 2SK2013
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2SJ313
2SK2013
100ms*
2sk2013 2SJ313
transistor marking 9D
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2SK1829
Abstract: No abstract text available
Text: TOSHIBA 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 829 Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package
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2SK1829
SC-70
10//S
2SK1829
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2SK1830
Abstract: No abstract text available
Text: TOSHIBA 2SK1830 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 830 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package EQUIVALENT CIRCUIT
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2SK1830
10//S
2SK1830
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transistor marking 9D
Abstract: 2SK2033 transistor kp
Text: TOSHIBA 2SK2033 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK2033 HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCH APPLICATIONS. • High Input Impedance. • Low Gate Threshold Voltage Vth = 0.5~1.5V • Excellent Switching Times ton = 0 .1 6 ^ typ.
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2SK2033
O-236MOD
SC-59
transistor marking 9D
2SK2033
transistor kp
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