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    MARKING 619 NPN SOT23 Search Results

    MARKING 619 NPN SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING 619 NPN SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT23 marking 619

    Abstract: marking 619 npn sot23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 SOT23 marking 619 marking 619 npn sot23

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236

    FMMT619TA

    Abstract: FMMT619TC FMMT619 FMMT720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A


    Original     		PDF FMMT619 200mV 625mW FMMT720 AEC-Q101 DS33236 FMMT619TA FMMT619TC FMMT619 FMMT720

    all diodes ratings

    Abstract: FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • VCEO > 50V IC cont = 2A 625mW Power dissipation Low Equivalent On Resistance


    Original     		PDF FMMT619 625mW OT-23 J-STD-020 DS33236 all diodes ratings FMMT619TA SOT23 marking 619 marking 619 sot23 marking 619 FMMT619 led driver sot-23

    FMMT619

    Abstract: fmmt720
    Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation


    Original     		PDF FMMT619 625mW 200mV FMMT720 AEC-Q101 DS33236 FMMT619

    smd transistor MARKING 2A

    Abstract: No abstract text available
    Text: Transistors SMD Type NPN Silicon Power Switching Transistor FMMT619 SOT-23 • Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Collector current:IC=2A 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 ● power dissipation :PC=625mw 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1


    Original     		PDF FMMT619 OT-23 625mw 200mA 100MHz smd transistor MARKING 2A

    BSS81C

    Abstract: BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 BSS79B BSS79C BSS81B BSS81C BSS79 BSS81C BSS79 BSS79B BSS79C BSS80 BSS81 BSS81B BSS82

    BSS79

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    br 2222 npn

    Abstract: SMBT2222A SMBT2907A
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 May-29-2001 br 2222 npn SMBT2222A SMBT2907A

    npn 2222 transistor

    Abstract: s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 Jul-11-2001 npn 2222 transistor s1P SOT23 SMBT2222A SOT23 SMBT2222A SMBT2907A MARKING s1P MARKING 1B SOT23 EHN00056

    MARKING s1P

    Abstract: 99V0
    Text: SMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type Marking SMBT2222A s1P Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT23 Maximum Ratings


    Original     		PDF SMBT2222A SMBT2907A VPS05161 Nov-30-2001 2222/A EHP00742 EHP00743 MARKING s1P 99V0

    Untitled

    Abstract: No abstract text available
    Text: BSS79, BSS81 NPN Silicon Switching Transistors 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS80, BSS82 PNP 2 1 Type Marking Pin Configuration BSS79B CEs 1=B 2=E 3=C SOT23 BSS79C CFs 1=B 2=E


    Original     		PDF BSS79, BSS81 BSS80, BSS82 VPS05161 BSS79B BSS79C BSS81B BSS81C BSS79

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# FMMT619 Features • • Halogen free available upon request by adding suffix "-HF" Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF FMMT619

    NPN SOT23-6

    Abstract: ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435
    Text: ZXT10N50DE6 SuperSOT 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 75m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give


    Original     		PDF ZXT10N50DE6 OT23-6 OT23-6 NPN SOT23-6 ZXT10N50DE6 ZXT10N50DE6TA ZXT10N50DE6TC DSA0037435

    transistor 2222a

    Abstract: transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP
    Text: SMBT 2222A NPN Silicon Switching Transistor 3 • High DC current gain: 0.1mA to 500 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 2907A PNP 2 1 Type Marking SMBT 2222A s1B Pin Configuration 1=B 2=E VPS05161 Package 3=C SOT-23


    Original     		PDF VPS05161 OT-23 2222/A EHP00744 EHP00745 Oct-14-1999 transistor 2222a transistor 2222a CURRENT GAIN 2222A transistor 2222a 2907a TRANSISTOR PNP

    npn 2222 transistor

    Abstract: MMBT2222A SMBT2222A SMBT2907A MARKING s1P
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 2222/A EHP00744 EHP00745 npn 2222 transistor MMBT2222A SMBT2222A SMBT2907A MARKING s1P

    MARKING s1P

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161 MARKING s1P

    h11E

    Abstract: No abstract text available
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: 1 SMBT2907A / MMBT2907A PNP • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907A MMBT2907A SMBT2222A/MMBT2222A h11E

    Untitled

    Abstract: No abstract text available
    Text: SMBT2222A/ MMBT2222A NPN Silicon Switching Transistor 3  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturation voltage  Complementary type: SMBT2907A PNP 2 1 Type SMBT2222A/ MMBT2222A Marking s1P 1=B Pin Configuration 2=E 3=C VPS05161


    Original     		PDF SMBT2222A/ MMBT2222A SMBT2907A VPS05161

    s1P SOT23

    Abstract: 619 SOT23-3 h11e
    Text: SMBT2222A/MMBT2222A NPN Silicon Switching Transistor • Low collector-emitter saturation voltage 2 3 • Complementary type: SMBT2907AW PNP 1 • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type Marking SMBT2222A/MMBT2222A s1P Pin Configuration


    Original     		PDF SMBT2222A/MMBT2222A SMBT2907AW SMBT2222A/MMBT2222A s1P SOT23 619 SOT23-3 h11e

    PMBT2369

    Abstract: No abstract text available
    Text: • bbS3T3i oossasi n? « N APIER PHILIPS/DISCRETE apx PMBT2222 PMBT2222A b?E D r v SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended fo r switching and linear appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF PMBT2222 PMBT2222A PMBT2369

    Untitled

    Abstract: No abstract text available
    Text: bb53T31 DOESSbT bfl4 « A P X N AUER PHILIPS/DISCRETE BSR13 BSR14 b7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF bb53T31 BSR13 BSR14 7Z82485

    BSR13

    Abstract: BSR14 CBO10
    Text: 711 G a e b 0 0 ^ 5 3 5 2 bfl PHIN BSR13 BSR14 SILICON PLANAR EPITAXIAL TRANSISTO RS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits. QUICK R EF ER E N C E DATA


    OCR Scan     		PDF 711Qaeb BSR13 BSR14 BSR13 BSR14 7Z82486 7Z82484 CBO10

    sot-23 MARKING CODE ZA

    Abstract: marking code VV transistors BSR13 BSR14 marx generator
    Text: •I bbSB^Bl ODcfSSb"! bö4 H A P X N AI1ER P H IL IP S /D IS C R E T E BSR13 BSR14 b?E » SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N silicon transistors, in a microminiature plastic envelope intended for switching and linear appli­ cations in thick and thin-film circuits.


    OCR Scan     		PDF BSR13 BSR14 BSR13 7Z82487 100//s sot-23 MARKING CODE ZA marking code VV transistors BSR14 marx generator