MARKING 5C5 Search Results

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

5C75

Abstract: 5SMC33 5SMC170A 5SMC160A 5SMC33A
Contextual Info: 5SMC33A THRU 5SMC170A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS 5000 WATT, 33 THRU 170 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR 5SMC33A series devices are surface mount uni-directional glass passivated

Transistor 5C5

Abstract: MARKING 5c5 CMLT5551
Contextual Info: Central CMLT5551 SURFACE MOUNT PICOminiTM DUAL NPN SMALL SIGNAL SILICON SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

Transistor 5C5

Abstract: CMLT5551
Contextual Info: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

Contextual Info: CMLT5551 SURFACE MOUNT SILICON DUAL, HIGH VOLTAGE NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors manufactured by the epitaxial planar process and epoxy molded in an SOT-563 suface

Contextual Info: CMLT5551 SURFACE MOUNT DUAL NPN SMALL SIGNAL HIGH VOLTAGE SILICON SWITCHING TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5551 consists of two individual, isolated NPN silicon transistors, manufactured by the epitaxial planar

Contextual Info: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products

Contextual Info: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products

Contextual Info: Skip to content | | | Products By Ty pe Connectors Electromechanical Components Electronic Modules Fiber Optics Filters Identification & Labeling Passive Com ponents Power Sources RF & Microwave Products Tooling Products Touch Screen Display s Tubing, Molded and H arnessing Products

m39029/63-368

Abstract: MIL-C-39029 pin dimension 24-33F m81969/1-02 20509 205167-1 M39029/64-369 M22520/2-08 446405-1 328F
Contextual Info: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 AMPLIMITE Subminiature D Connectors per MIL-C-24308 Catalogue 1654741 Revised 1-04 Features • ■ ■ ■ ■ ■ 1 Input/Output Connectors ■ Military qualified connectors

D-32425

Abstract: FF-890 D-32425-Minden foundation field bus 2010TD ABB pressure sensor 10mbar PN400 transistor marking 5c8 2010TA 2010TC
Contextual Info: Multi Vision Multivariable Transmitter 2010TC for Differential Pressure, Pressure and Temperature Mass Flow Spans: 0.5 mbar . 100 bar 10/15-4.12 EN 2010TCSW.TIF • ■ ■ ■ ■ ■ ■ Compensated mass flow measurement ■ Communication protocol:

IMISG509

Contextual Info: REDUCED EMI CLOCK CHIP IMISG509 CMOS LSI SPREAD SPECTRUM CLOCK GENERA TOR May 19 1995 PR O D U C T FEA TURES • Generates CPU Clock Signals for Microprocessor Systems ■ Reduces Measured EMI by 10 db nominal ■ 4V to 6V Operating Supply Range ■ Supports CPUs from all major manufacturers.

Contextual Info: DATASHEET TEMPERATURE COMPENSATED REAL-TIME CLOCK WITH TAMPER DETECT IDT5T90008 Description Features The IDT5T90008 is a temperature compensated real-time clock RTC device that consumes ultra-low power and provides a full binary-coded decimal (BCD) clock/calendar

103 c1k

Abstract: HCTS273 T004 qml-38535 qml38535
Contextual Info: REVISIONS APPROVED DATE YR-MO-DA DESCRIPTION ltr REV SHEET REV SHEET 15 16 REV REV STATUS OF SHEETS SHEET 9 1 PREPARED BY Joseph A. Kerby PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE

IPB025N10N3

Abstract: IPB025 b1c diode marking a5 4r diode marking a5 4r diode b1c
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPA105N15N3 G TM  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H -( J R ,?>=1G฀ )(&- Y I9 +/ 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀ ฀S฀?@5A1C9>7฀C5=@5A1CDA5

B1C DIODE

Abstract: IPB039N10N3 marking 1c marking a5 4r diode
Contextual Info: IPB039N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc +&1 Y" I9 ).( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB039N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc +&1 Y I9 ).( 6 P฀.5AH฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH

IPA105N15N3

Abstract: IPA105N15N 81a diode
Contextual Info: IPA105N15N3 G TM "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H -( J R  , ? >=1G )(&- Y" +/ I9 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z# P   S ? @5A1C9>7 C5=@5A1CDA5

Contextual Info: IPB025N10N3 G  3 Power-Transistor Product Summary Features P฀' 381>>5<฀>?A=1<฀<5E5< P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H ( J R 9H"[Z#$YMc *&- Y I9 )0( 6 P฀GCA5=5<H฀<?F฀?> A5B9BC1>35฀R 9H"[Z# P฀"978฀3DAA5>C฀31@129<9CH

65A3

Abstract: 5E DIODE marking c-9
Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<

65a3

Abstract: be5a IPB025N10N3G V9910 95E-9
Contextual Info: IPB025N10N3 G "%&$!"# 3 Power-Transistor Product Summary Features P ' 3 81>>5< >? A=1<<5E5< P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  V 9H ( J R 9H"[Z#$YMc *&- Y" I9 )0( 6 P GCA5=5<H <? F ? > A5B9BC1>3 5 R 9H"[Z# P " 978 3 DAA5>C3 1@12 9<9CH

Contextual Info: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(

Contextual Info: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&