SMA 905 Connector Dimensions
Abstract: c1137
Text: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and
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PP-38
SMA 905 Connector Dimensions
c1137
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Untitled
Abstract: No abstract text available
Text: Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure and high dynamic range, and
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PP-38
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SN62PRMAB3
Abstract: No abstract text available
Text: H Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC/PPA 544 Series Features Description Pin Configuration • Frequency Range: 10 to 500␣MHz The 544 Series is a thin-film RF bipolar amplifier using lossless feedback for optimum noise figure
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500MHz
PP-38
5963-3232E
5963-2536E
SN62PRMAB3
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2SC5006
Abstract: 2SC5006-T1 "Small Signal Amplifiers" P1038 TD-2399
Text: DATA SHEET SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
2SC5006-T1
"Small Signal Amplifiers"
P1038
TD-2399
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TP3053
Abstract: 26B01 tp3057 tp3057n 0z2 marking
Text: TP3054 TP3057 ‘‘Enhanced’’ Serial Interface CODEC Filter COMBO Family General Description Features The TP3054 TP3057 family consists of m-law and A-law monolithic PCM CODEC filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM
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TP3054
TP3057
TP3057
TP3057N
TP3057V
TP3057V-X
TP3057V
TP3053
26B01
0z2 marking
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marking 1p
Abstract: No abstract text available
Text: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com
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MMBT2222ATT1
416/SC
marking 1p
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TP3020
Abstract: TP3064WM-X TP3067n AN370
Text: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface
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TP3064
TP3067
TP3064
TP305X
-law-TP3064
-law-TP3067
9-Aug-2002]
TP3020
TP3064WM-X
TP3067n
AN370
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Untitled
Abstract: No abstract text available
Text: TP3064 TP3067 ‘‘Enhanced’’ Serial Interface CMOS CODEC Filter COMBO General Description Features The TP3064 m-law and TP3067 (A-law) are monolithic PCM CODEC Filters utilizing the A D and D A conversion architecture shown in Figure 1 and a serial PCM interface
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TP3064
TP3067
TP3064
TP305X
AN-370
-law-TP3064
-law-TP3067
9-Aug-2002]
allot/20aug2002/TP3064
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marking package 545 amplifier
Abstract: marking 544 low noise amplifier 544 mmic MMIC 545 smt a1 transistor AMOBP1575P02 AMOBP1575P02-A1 AMOTECH marking 544 amplifier marking package 545 mmic
Text: HMC548LP3 / 548LP3E v00.0406 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters
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HMC548LP3
548LP3E
HMC548LP3E
HMC548LP3
marking package 545 amplifier
marking 544 low noise amplifier
544 mmic
MMIC 545
smt a1 transistor
AMOBP1575P02
AMOBP1575P02-A1
AMOTECH
marking 544 amplifier
marking package 545 mmic
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Untitled
Abstract: No abstract text available
Text: HMC548LP3 / 548LP3E v02.0706 AMPLIFIERS - SMT 5 SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz Typical Applications Features The HMC548LP3 / HMC548LP3E is ideal for: Single Supply: Vcc = +5V • Automotive Telematics Low Noise Figure: 1.3 dB • GPS Antenna Modules / Boosters
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HMC548LP3
548LP3E
HMC548LP3E
HMC548LP3
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nec 2532
Abstract: NEC JAPAN 282 110 01 NEC 282 185 01 816-102 2SC5014 2SC5014-T1 2SC5014-T2 NEC 2134 transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 12 GHz TYP. in millimeters • Low Noise, High Gain
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2SC5014
2SC5014)
2SC5014-T2
nec 2532
NEC JAPAN 282 110 01
NEC 282 185 01
816-102
2SC5014
2SC5014-T1
2SC5014-T2
NEC 2134 transistor
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Untitled
Abstract: No abstract text available
Text: GaAs MMIC CMH 192 Target Data Sheet • High-Linearity, PCS LNA/Mixer IC for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: – 7.0 to 0 dBm
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P-VQFN-20-3
Q62705-K0608
P-VQFN-20
EHA07523
GVQ09290
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NE42484C
Abstract: 2608 surface mount transistor NE42484C-T1 Ga FET marking k C band FET transistor s-parameters L to Ku BAND LOW NOISE AMPLIFIER NEC Ga FET marking C 1S1220 THE TRANSISTOR MANUAL (JAPANESE) 1993 nec gaas fet marking
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE42484C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit : mm The NE42484C is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent
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NE42484C
NE42484C
NE42484C-SL
2608 surface mount transistor
NE42484C-T1
Ga FET marking k
C band FET transistor s-parameters
L to Ku BAND LOW NOISE AMPLIFIER
NEC Ga FET marking C
1S1220
THE TRANSISTOR MANUAL (JAPANESE) 1993
nec gaas fet marking
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nec 2412
Abstract: transistor NEC 882 p 2412 NEC 2SC5012-T1 2SC5012 2SC5012-T2 NEC 2403 106 NEC 2403 545 TD-2412 nec 2702
Text: DATA SHEET SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 9 GHz TYP. in millimeters 2.1 ± 0.2 1.25 ± 0.1
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2SC5012
2SC5012-T1
2SC5012-T2
nec 2412
transistor NEC 882 p
2412 NEC
2SC5012-T1
2SC5012
2SC5012-T2
NEC 2403 106
NEC 2403 545
TD-2412
nec 2702
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BFR96TS
Abstract: No abstract text available
Text: BFR96TS Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to GHz range specially for wide band antenna amplifier. Features D High power gain D Low noise figure
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BFR96TS
BFR96TS
D-74025
22-Jan-01
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0709s
Abstract: No abstract text available
Text: 2SC4842 SILICQN NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. N F = l.ldB , |S2le|2= 14dB f=lGHz 2 1 J:0 .1 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage
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2SC4842
20niA
0709s
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5006 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5006 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
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2SC5006
2SC5006
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz
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2SC4322
IS21ei2
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22-H-1
Abstract: 2SC484 TRANSISTOR 4841 2SC4841 NF 7513
Text: TOSHIBA 2SC4841 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4841 V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure, High Gain. . N F = 1.8dB, |S2 iel2 = 8.5dB f = 2GHz MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC RATING
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2SC4841
22-H-1
2SC484
TRANSISTOR 4841
2SC4841
NF 7513
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Untitled
Abstract: No abstract text available
Text: W hnl H EW LETT mL'fLMP A C K A R D 0.5 - 6 GHz Low Noise GaAs MMIC Amplifier Technical Data MGA-86563 Features • Ultra-Miniature Package • Internally Biased, Single +5 V Supply 14 mA • 1.6 dB Noise Figure at 2.4 GHz • 21.8 dB Gain at 2.4 GHz • +3.1 dBm PldB at 2.4 GHz
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MGA-86563
OT-363
MGA-86563
MGA-86563-TR1
MGA-86563-BLK
OT-363/SC-70)
DG143S4
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gaas fet marking
Abstract: No abstract text available
Text: In fineon •i c h r t l o g ifci CMH192 GaAs MMIC Target Data Sheet • High-Linearity, PCS LNA/Mixer 1C for use in US and Korean band CDMA Mobile Phones • Integrated bypass switch for LNA • GaAs PHEMT Process • Leadless 3.5 x 3.5 mm. SMT package • LO - Input power range: - 7.0 to 0 dBm
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CMH192
Q62705-K0608
P-VQFN-20
gaas fet marking
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Burr Brown part marking
Abstract: OPA4243 OPA4243EA
Text: B U R R - BROW N n ^ OPA4243 n For most current data sheet and other product information, visit www.burr-brown.com Quad OPERATIONAL AMPLIFIER AT/croPOWER, Single-Supply FEATURES DESCRIPTION • MICRO-SIZE, TSSOP PACKAGE The OPA4243 is a four-channel op amp specifically
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OPA4243
45fiA/chan
430kHz
OPA4243
Burr Brown part marking
OPA4243EA
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transistor NEC D 882 p
Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •
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2SC5012
2SC5012-T1
2SC5012-T2
transistor NEC D 882 p
transistor NEC b 882 p
transistor NEC 882 p
transistor NEC b 882
nec d 882 p transistor
nec 358 amplifier
transistor NEC D 587
34077
6069 marking
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NEC 2532 n 749
Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation
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2SC5014
2SC5014-T1
2SC5014-T2
2SC5014)
NEC 2532 n 749
NEC 2532
PT1060
transistor NEC D 822 P
transistor NEC D 587
NEC 2134 transistor
transistor c 6091
transistor sp 772
SP 2822
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