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    MARKING 416 OPTO Search Results

    MARKING 416 OPTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3475W Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output), 60 V/0.4 A, 300 Vrms, WSON4 Visit Toshiba Electronic Devices & Storage Corporation
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 416 OPTO Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor 415

    Abstract: MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


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    PDF stea01-01 GEO06645 GEX06630 transistor 415 MARKING 416 OPTO OHRD1938 Q62702-P1137 Q62702-P1139 Q62702-P296 SFH 960

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    Abstract: No abstract text available
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


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    PDF 415-U 416-R Q62702-P296 Q62702-P1137 Q62702-P1139

    OHRD1938

    Abstract: Q62702-P1137 Q62702-P1139 Q62702-P296
    Text: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 SFH 415 SFH 416 Wesentliche Merkmale Features • GaAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Gute spektrale Anpassung an Si-Fotoempfänger • SFH 415: Gehäusegleich mit SFH 300,


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    transistor 115

    Abstract: MOC205 MOC207 M0C207 M206 MOC206 RS481A MOC205 motorola
    Text: Order this data sheet bv MOC205/D MOTOROLA m TECHNICAL DATA MOC205 MOC206 MOC207,$!. ‘%1, ,.!. >>. . Small Outline Optoisolators Transistoroutput These devices consist to a monolithic plastic silicon package. They of a gallium phototransistor are ideally


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    PDF MOC205/D MOC205 MOC206 MOC207 c63W4 M0C207 transistor 115 MOC205 MOC207 M0C207 M206 MOC206 RS481A MOC205 motorola

    capacitor Y5S 022

    Abstract: BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor
    Text: VISHAY INTE R TE C HNO L O G Y , IN C . INTERACTIVE data book CERAMIC DISC CAPACITORS vishay BCcomponents vsD-db0071-0409 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


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    PDF vsD-db0071-0409 capacitor Y5S 022 BC Z5U 1KV BC RR 152 1KV X7R 3KV 3300pf radial ceramic disc Vishay BC 038 IEC EN 60065 REPORT S100K VISHAY Z5U 3KV EIA-198 method 103 47pF 50V NPO ceramic disk capacitor

    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    MARKING 416 OPTO

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination DomiLED TM DATA SHEET: DomiLEDTM AlGaAs : DDH-GRS TM Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination DomiLED TM DATA SHEET: DomiLEDTM AlGaAs : DDH-GRS TM TM Synonymous with function and performance, the DomiLED series is perfectly suited for a variety of cross-industrial applications due to its small package outline, durability and superior brightness.


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination Mini DomiLED TM DATA SHEET: Mini DomiLEDTM AlInGaP : DNx-MJS TM Synonymous with function and performance, the Mini DomiLED series is perfectly suited for a variety of cross-industrial applications due to its


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    Untitled

    Abstract: No abstract text available
    Text: DOMINANT Opto Technologies Innovating Illumination TM DATA SHEET: SPNovaTM 1-Watt AlInGaP With Lens SPNova TM Featuring a staggering brilliance and significant flux output, the SPNova showcases the latest technological advent in this range. With its extremely high level of brightness and the ultra


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    GN2004

    Abstract: No abstract text available
    Text: GN2014A XFP Tx Signal Conditioner with VCSEL Driver Features Applications • • • • • • • • • • • • • • XFP Datacom Compliant Transmit Signal Conditioner Integrated VCSEL driver with Cross Point Adjust functionality to optimize optical performance


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    PDF GN2014A 300mW 700mVppd 95Gb/s GN2004

    fototransistor BPW 39

    Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
    Text: SI-FOTODETEKTOREN, OPTISCHE SENSOREN UND IR-LUMINESZENZDIODEN SILICON PHOTODETECTORS, OPTICAL SENSORS AND INFRARED EMITTERS SICHERHEITSHINWEISE SAFETY INSTRUCTIONS Osram Opto Semiconductor IRED erreichen mit ihrer hohen Strahlungsleistung heute z. T. bereits die Helligkeit von Glühlampen und können die Grenzen der Klasse 1 nach IEC 825.1 bzw.


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    PDF EN60825-1 GETY6091 GPLY6899 GPLY6880 fototransistor BPW 39 fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor

    Untitled

    Abstract: No abstract text available
    Text: FDS3672 N-Channel PowerTrench MOSFET 100V, 7.5A, 22mΩ Features Applications • r DS ON = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


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    PDF FDS3672

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    Abstract: No abstract text available
    Text: FDS3672 N-Channel PowerTrench MOSFET 100V, 7.5A, 22mΩ Features Applications • r DS ON = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge


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    PDF FDS3672

    Untitled

    Abstract: No abstract text available
    Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mΩ Features General Description „ Max rDS on = 140 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,


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    PDF FDZ661PZ FDZ661PZ

    Untitled

    Abstract: No abstract text available
    Text: P-Channel 1.5 V Specified PowerTrench Thin WL-CSP MOSFET -20 V, -2.6 A, 140 mΩ Features General Description ̈ Max rDS on = 140 mΩ at VGS = -4.5 V, ID = -2 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process,


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    PDF FDZ661PZ

    Untitled

    Abstract: No abstract text available
    Text: NT IA PL M CO S oH *R Features • ■ ■ ■ ■ ■ Lead free HCMOS, CMOS and TTL compatible Compact package size High rotational cycle life Standard or high force push switch option Optional detent ■ ■ ■ ■ Splashproof shaft seal Recommended for human/machine


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    51a zener

    Abstract: motorola ZENER 39a 10029a 1SMB5917A 6833a 2306C 1SMB5914A Motorola Zener 1SMB5913A 1SMB5915A
    Text: M O T O R O L A SC D IODES/OPTO 2SE D b3fcj?255 Ü0Ô1325 3 • Order this data sheet by 1SMB5913A/D 1h I-5T MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1SMB5956A, B 1.5 W att P lastic Surface M o u n t Silico n Zener D iodes . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


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    PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 2306C 1SMB5913A 2415S 51a zener motorola ZENER 39a 10029a 1SMB5917A 6833a 1SMB5914A Motorola Zener 1SMB5915A

    sl-100 TRANSISTOR

    Abstract: MQC207 OC205 OC206
    Text: MOTOROLA SEM ICO NDUCTO R TECHNICAL DATA M O C 205 M O C 206 MOC2Q7 Sm all Outline Optoisolators Transistor Output These devices co nsist o f a g a lliu m arsenide in fra re d e m ittin g d io d e o p tic a lly coup le d to a m o n o lith ic silico n p h o to tra n s is to r d ete cto r, in a surface m o u n ta b le , sm a ll o u tlin e ,


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    Diode Marking ZM Motorola

    Abstract: DIODE MOTOROLA 39A ZENER 18-2 5t
    Text: M O T O R O L A SC DIODE S/O PTO 2SE D b3fcj?255 Ü0Ô1325 3 MOTOROLA • Order this data sheet by 1SMB5913A/D 1b I-5T SEMICONDUCTOR TECHNICAL DATA 1SMB5913A, B thru 1.5 W att Plastic Surface M ount Silicon Zener Diodes 1SMB5956A, B . . . a completely new line of 1.5 Watt Zener Diodes offering the following advantages:


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    PDF 1SMB5913A/D 1SMB5913A, 1SMB5956A, 1SMB5913A 241Sb C6459& Diode Marking ZM Motorola DIODE MOTOROLA 39A ZENER 18-2 5t