MARKING 3CS Search Results

B12 GDM

Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Contextual Info: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL

C2373

Abstract: Q62702-C2373 H12E MARKING CODE 5B1 6c2 transistor 3cs transistor
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code

5b1 transistor

Abstract: transistor 5B1 H12E
Contextual Info: BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration

transistors BC 543

Abstract: TRANSISTOR BC 748 transistor BC 543
Contextual Info: SIEMENS BC 857S PNP Silicon A F Transistor Array • For AF input stages and driver applications >High current gain >Low collector-emitter saturation voltage •Two galvanic internal isolated Transistors in one package 3Cs lil Lit L±J Pin Configuration

transistor marking 6c1

Abstract: transistor marking E2 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

sot363 marking DATE code

Abstract: marking AF BC856S BC856U BC857S BC857U SC74 marking B1 sot363 marking 3cs 3Ds SOT363
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor marking 6c1

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

transistor BC 339

Abstract: TRANSISTOR BC 629 339 marking code transistor PG-SOT363-6-1 MA000849564
Contextual Info: BC856S/U_BC857S PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated transistor with good matching in one package • BC856S / U, BC857S: For orientation in reel see

Transistor S8550 2TY

Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
Contextual Info: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250

Y2 transistor

Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
Contextual Info: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123

Contextual Info: Tel : Fax : email : 0044 0 118 979 1238 0044 (0)118 979 1283 info@actcrystals.com ACT3CSV-4 VCXO The ACT3CSV-4 is a family of 4-pad miniature surface mount Voltage Controlled Crystal Oscillators (VCXO) housed in a 3.2 X 2.5mm ceramic package with a metal lid. Only 1.0mm

MARKING 3cs

Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

ADS586

Contextual Info: 8 MAW IMO HADE IN THIRD ANGLE PROJECTION THIS ORAWING IS UNPUBLISHED. RELEASCO POR PUBLICATION .19 OOPVftftHT I« 0V AMP IHOOOOHAT«. AU. /NtlNNArfOMAC HUNTS KSKMC. oisr LOG AD 25 £ REVISIONS oescoirrioN 20NE tw* dare APPO DRAWN S 54.36C2.140J MAX 49.3 5 ± 0 . 1 [1. 943±. 0 0 4 J

3cs transistor

Abstract: marking 3cs 6c2 transistor PS056
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array • For AF input stages and driver applications A • High current gain 5_ O ^ • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package

marking Ht SOT-363

Abstract: 3h250 FT12E 3cs transistor
Contextual Info: SIEMENS BC 857S PNP Silicon AF Transistor Array >For AF input stages and driver applications 1High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package ^ F I H "•> <>« i- n - i u Ordering Code

AS5640

Contextual Info: 8 MAW IMO HADE IN THIRD ANGLE PROJECTION THIS ORAWING IS UNPUBLISHED. RELEASCO POR PUBLICATION .19 OOPVftftHT I« 0V AMP IHOOOOHAT«. AU. /NtlNNArfOMAC HUNTS KSKMC. oisr LOG AD 25 £ REVISIONS oescoirrioN 20NE tw* dare APPO DRAWN S 54.36C2.140J MAX 49.3 5 ± 0 . 1 [1. 943±. 0 0 4 J

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

BC857S

Abstract: VPS05604
Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

BC857S

Abstract: VPS05604
Contextual Info: BC857S PNP Silicon AF Transistor Array 4
For AF input stages and driver applications 5 6
High current gain
Low collector-emitter saturation voltage
Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604 C1 B2

VPS05604

Contextual Info: BC 857S PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with good matching in one package 2 3 1 VPS05604

2SK146

Contextual Info: Ordering num ber: EN4892 _ FX852 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications Features • Composite type composed of a low ON-resistance N-channel MOSFET for ultrahigh-speed switching and Iow-voltage driving and a fast-recovery, low forward-voltage Schottky barrier diode. Facilitates