4435a
Abstract: 9435a 4410b 9407a 9952a 9936A 9926A Sc 6200 equivalent 993-9A 8435a
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Marking Drain Current Static Drain to Source On Resistance Max. Gate Threshold Voltage Zero Gate Voltage Drain Current VGSS ID DC RDS(ON) @ ID / VGS VGS(th) IDSS @ VDS,VGS=0V
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912I st
Abstract: 912I 275U-000U TS912 TS912AIN TS912IN 912bI
Text: TS912 Rail-to-Rail CMOS Dual Operational Amplifier • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mv max. ■ Specified for 600Ω and 100Ω loads
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TS912
TS912
912I st
912I
275U-000U
TS912AIN
TS912IN
912bI
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912I
Abstract: TS912 TS912AIN TS912IN 912I st kf656
Text: TS912 Rail-to-Rail CMOS Dual Operational Amplifier • Rail-to-rail input and output voltage ranges ■ Single or dual supply operation from 2.7V to 16V ■ Extremely low input bias current: 1pA typ. ■ Low input offset voltage: 2mV max. ■ Specified for 600Ω and 100Ω loads
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TS912
TS912
912I
TS912AIN
TS912IN
912I st
kf656
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 BUK7Y12-100E N-channel 100 V, 12 mΩ standard level MOSFET in LFPAK56 8 May 2013 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 Power SO8 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101
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BUK7Y12-100E
LFPAK56
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Untitled
Abstract: No abstract text available
Text: New Product SiR814DP Vishay Siliconix N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 40 ID (A) 0.0021 at VGS = 10 V 60 0.0029 at VGS = 4.5 V 60 Qg (Typ.) 27 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •
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SiR814DP
2002/95/EC
SiR814DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Si7894ADP
Abstract: 42014
Text: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894ADP
07-mm
Si7894ADP-T1--E3
S-42014--Rev.
01-Nov-04
42014
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FDS7779Z
Abstract: No abstract text available
Text: FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
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FDS7779Z
FDS7779Z
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FDS7779Z
Abstract: No abstract text available
Text: FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers, and battery chargers.
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FDS7779Z
FDS7779Z
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4435 mosfet
Abstract: Mi 4435 MOSFET 4435 APM4435 4435 so8 4435D 4435 B Mos-Fet apm4435 4435 marking 4435
Text: APM4435 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V S 1 8 D Super High Density Cell Design S 2 7 D Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • •
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APM4435
-30V/-8A,
4435 mosfet
Mi 4435
MOSFET 4435
APM4435
4435 so8
4435D
4435 B
Mos-Fet apm4435
4435
marking 4435
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4835D
Abstract: 4835 D 4835 mosfet mosfet 4835 APM4835 APM4835 mosfet 7F MARKING 4835 so-8
Text: APM4835 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-8A, RDS ON = 16mΩ(typ.) @ VGS = -10V RDS(ON) = 24mΩ(typ.) @ VGS = -4.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G
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APM4835
-30V/-8A,
4835D
4835 D
4835 mosfet
mosfet 4835
APM4835
APM4835 mosfet
7F MARKING
4835 so-8
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Untitled
Abstract: No abstract text available
Text: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894ADP
07-mm
Si7894ADP-T1--E3
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si7894ADP New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Optimized for “Low Side” Synchronous Rectifier Operation D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D 100% Rg Tested PRODUCT SUMMARY
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Si7894ADP
07-mm
Si7894ADP-T1--E3
08-Apr-05
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Si7894ADP
Abstract: Si7894ADP-T1-E3
Text: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7894ADP
Si7894ADP-T1-E3
Si7894ADP-T1-GE3
18-Jul-08
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SI7380ADP
Abstract: No abstract text available
Text: Si7380ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.003 @ VGS = 10 V 40 0.0035 @ VGS = 4.5 V 40 Qg (Typ) 54 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr
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Si7380ADP
107-mm
Si7380ADP-T1--E3
S-51003--Rev.
23-May-05
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SI4634
Abstract: Si4634DY-T1-GE3 SI4634DY-T1-E3 Si4634DY
Text: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested
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Si4634DY
Si4634DY-T1-E3
Si4634DY-T1-GE3
18-Jul-08
SI4634
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Untitled
Abstract: No abstract text available
Text: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7894ADP
Si7894ADP-T1-E3
Si7894ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ) 21.5 nC • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested
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Si7634BDP
Si7634BDP-T1-E3
08-Apr-05
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SI7380ADP
Abstract: No abstract text available
Text: Si7380ADP Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID rDS(on) (W) 30 (A)a 0.003 @ VGS = 10 V 40 0.0035 @ VGS = 4.5 V 40 Qg (Typ) 54 nC D TrenchFETr Power MOSFET D PWM Optimized D New Low Thermal Resistance PowerPAKr
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Si7380ADP
107-mm
Si7380ADP-T1--E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: New Product Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT
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Si4634DY
Si4634DY-T1-E3
18-Jul-08
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SI7380ADP
Abstract: No abstract text available
Text: Si7380ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.003 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 54 nC PowerPAK SO-8 • • • • Halogen-free available TrenchFET Power MOSFET PWM Optimized
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Si7380ADP
Si7380ADP-T1-E3
Si7380ADP-T1-GE3
08-Apr-05
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Si7634BDP-T1-E3
Abstract: Si7634BDP Si7634BDP-T1-GE3
Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm
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Si7634BDP
Si7634BDP-T1-E3
Si7634BDP-T1-GE3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: Si7894ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0036 at VGS = 10 V 25 0.0045 at VGS = 4.5 V 23 Qg (Typ.) 58 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7894ADP
Si7894ADP-T1-E3
Si7894ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR862DP Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.0028 at VGS = 10 V 50 0.0035 at VGS = 4.5 V 50 VDS (V) 25 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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SiR862DP
2002/95/EC
SiR862DP-T1-GE3
18-Jul-08
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SI7634BDP-T1-GE3
Abstract: Si7634BDP Si7634BDP-T1-E3
Text: New Product Si7634BDP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0054 at VGS = 10 V 40g 0.007 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Notebook PC Core - Low Side - High Side 5.15 mm
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Si7634BDP
Si7634BDP-T1-E3
Si7634BDP-T1-GE3
18-Jul-08
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