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    MARKING 34P SOT23 Search Results

    MARKING 34P SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL28114SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL28113SOT23EVAL1Z Renesas Electronics Corporation Single General Purpose Micropower, RRIO Op Amp Evaluation Board Visit Renesas Electronics Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation

    MARKING 34P SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 PDF

    marking 34P sot 23

    Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V


    Original     		DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 marking 34P sot 23 DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P PDF

    marking 34P sot23

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 marking 34P sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 PDF

    DMG3415U-13

    Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 DMG3415U-13 "marking code" 34P sot23 marking code YW DIODE marking 34P sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U DS31735 PDF

    DMG3415U

    Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V


    Original     		DMG3415U AEC-Q101 OT-23 J-STD-020D DS31735 DMG3415U marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D PDF

    "marking code" 34P sot23

    Abstract: marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 "marking code" 34P sot23 marking 34P sot23 PDF

    DMG3415UQ-7

    Abstract: DMG3415U-7 DS31735 marking 34P sot23
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching


    Original     		DMG3415U AEC-Q101 DS31735 621-DMG3415U-7 DMG3415U-7 DMG3415UQ-7 DMG3415U-7 marking 34P sot23 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage


    Original     		DMG3415U AEC-Q101 DS31735 PDF

    marking 34P sot 23

    Abstract: marking 34P sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original     		UT3413 UT3413 UT3413L-AE2-R UT3413G-AE2-R UT3413L-AE3-R UT3413G-AE3-R OT-23-3 OT-23 QW-R502-159 marking 34P sot 23 marking 34P sot23 PDF

    marking 34P sot 23

    Abstract: marking 34P marking 34P sot23
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3413 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UTC UT3413 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed, low on-resistance, excellent thermal and electrical capabilities and


    Original     		UT3413 UT3413 UT3413L-AE3-R UT3413G-AE3-R OT-23 QW-R502-159 marking 34P sot 23 marking 34P marking 34P sot23 PDF

    marking W26 sot23

    Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
    Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters


    Original     		OT23-3 OT-23) OT23-5 OT-25) TK73249M OT23L-8 TK73250M TK73255M marking W26 sot23 SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89 PDF

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


    OCR Scan     		PDF