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    MARKING 25 SC-59 POWER Search Results

    MARKING 25 SC-59 POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CLC114A/BCA Rochester Electronics LLC CLC114 - VIDEO BUFFER, QUAD, LOW POWER - Dual marked (5962-9233901MCA) Visit Rochester Electronics LLC Buy
    UHC508J/883C Rochester Electronics LLC UHC508 - POWER DRIVER, NAND, QUAD 2-INPUT - Dual marked (8550001DA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    UHD532/883 Rochester Electronics LLC UHD532 - POWER DRIVER, NOR, QUAD 2-INPUT, 100V - Dual marked (5962-8960403CA) Visit Rochester Electronics LLC Buy
    100331/VYA Rochester Electronics LLC 100331 - 100K Series, Low Power Triple D-Type Flip-Flop - Dual marked (5962-9153601VYA) - SPACE-LEVEL LOGIC Visit Rochester Electronics LLC Buy

    MARKING 25 SC-59 POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC-59

    Abstract: L SC-70
    Text: MEDIUM POWER SCHOTTKY BARRIER DIODES SINGLE DIODES Ta = 25˚C Circuit Part Part No. Type Pkg. Marking RB461F 1/3 SC-70 3B RB411D 1/3 SC-59 D3E RB491D 1/3 SC-59 D2E RB411D is equivalent to BAT54 Abs max ratings VRM IO IFSM V A A 25 0.7 3 40 0.5 3 25 1.0 3 Electrical characteristics


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    PDF RB461F SC-70 RB411D SC-59 RB491D BAT54 SC-70, L SC-70

    Untitled

    Abstract: No abstract text available
    Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount


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    PDF MSD42WT1, MSD42T1 SC-70/SOT-323 SC-59 SC-70 OT-323)

    "MARKING CODE M"

    Abstract: MSD42T1 MSD42WT1 MSD42WT1G
    Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount


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    PDF MSD42WT1, MSD42T1 SC-70/SOT-323 SC-59 MSD42WT1/D "MARKING CODE M" MSD42T1 MSD42WT1 MSD42WT1G

    M1MA152AT1

    Abstract: No abstract text available
    Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    PDF M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 M1MA152AT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    PDF M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1

    M1MA151AT1

    Abstract: M1MA151AT1G M1MA152AT1 M1MA152AT1G
    Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount


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    PDF M1MA151AT1, M1MA152AT1 SC-59 M1MA151AT1r M1MA151AT1/D M1MA151AT1 M1MA151AT1G M1MA152AT1 M1MA152AT1G

    Untitled

    Abstract: No abstract text available
    Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount


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    PDF M1MA151AT1, M1MA152AT1 M1MA151AT1/D

    Untitled

    Abstract: No abstract text available
    Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount


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    PDF M1MA151KT1, M1MA152KT1 SC-59 M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1

    M1MA152KT1G

    Abstract: M1MA151 marking M1MA151KT1 M1MA151KT1G M1MA152KT1
    Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount


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    PDF M1MA151KT1, M1MA152KT1 SC-59 M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA151KT1/D M1MA152KT1G M1MA151 marking M1MA151KT1 M1MA151KT1G M1MA152KT1

    Untitled

    Abstract: No abstract text available
    Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount


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    PDF M1MA151KT1, M1MA152KT1 M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA151KT1/D

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    PDF M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 M1MA152AT1

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    PDF M1MA151/2KT1 inch/3000 M1MA151/2KT3 inch/10 M1MA151KT1 M1MA152KT1 M1MA152KT1

    Untitled

    Abstract: No abstract text available
    Text: MSB92T1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−59 package which is designed for low power surface mount applications.


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    PDF MSB92T1G SC-59 MSB92T1G/D

    Untitled

    Abstract: No abstract text available
    Text: MSB92T1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−59 package which is designed for low power surface mount applications.


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    PDF MSB92T1G MSB92T1G/D

    M1MA151 marking

    Abstract: M1MA151AT1 M1MA152AT1 SMD310
    Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.


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    PDF M1MA151/2AT1 inch/3000 M1MA151/2AT3 inch/10 M1MA151AT1 M1MA152AT1 r14525 M1MA151AT1/D M1MA151 marking M1MA151AT1 M1MA152AT1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface


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    PDF MSD42WT1G, MSD42T1G SC-70/SOT-323 SC-59 MSD42WT1/D

    Untitled

    Abstract: No abstract text available
    Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface


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    PDF MSD42WT1G, MSD42T1G SC-70/SOT-323 MSD42WT1/D

    AND8004/D

    Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
    Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G00 MC74HC 353/SC AND8004/D V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004

    T138A

    Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
    Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1GU04 MC74HC 353/SC T138A U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code

    MC74HC

    Abstract: marking t132 marking code V6 diode V = Device Code
    Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G04 MC74HC 353/SC marking t132 marking code V6 diode V = Device Code

    wz 74 marking

    Abstract: t138a V = Device Code
    Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G02 MC74HC 353/SC wz 74 marking t138a V = Device Code

    H2D MARKING CODE

    Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
    Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G08 MC74HC 353/SC H2D MARKING CODE marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3

    Wafer Fab Plant Codes ST

    Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
    Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer


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    PDF MC74HC1G32 MC74HC 353/SC Wafer Fab Plant Codes ST V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08

    dtc124eka

    Abstract: B 557 PNP TRANSISTOR transistor 556 DTC124EE EMT3
    Text: DTC124EE DTC124EUA DTC124EKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC124EE (EMT3) l.6±0.2 package marking: DTC124EE, DTC124EUA, and DTC124EKA; 25


    OCR Scan
    PDF DTC124EE DTC124EUA DTC124EKA SC-70) SC-59) DTC124EE, DTC124EUA, DTC124EKA; DTC124EE DTC124EUA dtc124eka B 557 PNP TRANSISTOR transistor 556 DTC124EE EMT3