SC-59
Abstract: L SC-70
Text: MEDIUM POWER SCHOTTKY BARRIER DIODES SINGLE DIODES Ta = 25˚C Circuit Part Part No. Type Pkg. Marking RB461F 1/3 SC-70 3B RB411D 1/3 SC-59 D3E RB491D 1/3 SC-59 D2E RB411D is equivalent to BAT54 Abs max ratings VRM IO IFSM V A A 25 0.7 3 40 0.5 3 25 1.0 3 Electrical characteristics
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RB461F
SC-70
RB411D
SC-59
RB491D
BAT54
SC-70,
L SC-70
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Untitled
Abstract: No abstract text available
Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount
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MSD42WT1,
MSD42T1
SC-70/SOT-323
SC-59
SC-70
OT-323)
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"MARKING CODE M"
Abstract: MSD42T1 MSD42WT1 MSD42WT1G
Text: MSD42WT1, MSD42T1 Preferred Device NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface mount
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MSD42WT1,
MSD42T1
SC-70/SOT-323
SC-59
MSD42WT1/D
"MARKING CODE M"
MSD42T1
MSD42WT1
MSD42WT1G
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M1MA152AT1
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
M1MA152KT1
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M1MA151AT1
Abstract: M1MA151AT1G M1MA152AT1 M1MA152AT1G
Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151AT1,
M1MA152AT1
SC-59
M1MA151AT1r
M1MA151AT1/D
M1MA151AT1
M1MA151AT1G
M1MA152AT1
M1MA152AT1G
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Untitled
Abstract: No abstract text available
Text: M1MA151AT1, M1MA152AT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151AT1,
M1MA152AT1
M1MA151AT1/D
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Untitled
Abstract: No abstract text available
Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151KT1,
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
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M1MA152KT1G
Abstract: M1MA151 marking M1MA151KT1 M1MA151KT1G M1MA152KT1
Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151KT1,
M1MA152KT1
SC-59
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA151KT1/D
M1MA152KT1G
M1MA151 marking
M1MA151KT1
M1MA151KT1G
M1MA152KT1
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Untitled
Abstract: No abstract text available
Text: M1MA151KT1, M1MA152KT1 Preferred Device Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC−59 package which is designed for low power surface mount
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M1MA151KT1,
M1MA152KT1
M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA151KT1/D
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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PDF
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
M1MA152KT1
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Untitled
Abstract: No abstract text available
Text: MSB92T1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−59 package which is designed for low power surface mount applications.
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MSB92T1G
SC-59
MSB92T1G/D
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Untitled
Abstract: No abstract text available
Text: MSB92T1G PNP Silicon General Purpose High Voltage Transistor http://onsemi.com This PNP Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC−59 package which is designed for low power surface mount applications.
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MSB92T1G
MSB92T1G/D
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M1MA151 marking
Abstract: M1MA151AT1 M1MA152AT1 SMD310
Text: ON Semiconductort Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
r14525
M1MA151AT1/D
M1MA151 marking
M1MA151AT1
M1MA152AT1
SMD310
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Untitled
Abstract: No abstract text available
Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface
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MSD42WT1G,
MSD42T1G
SC-70/SOT-323
SC-59
MSD42WT1/D
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Untitled
Abstract: No abstract text available
Text: MSD42WT1G, MSD42T1G NPN Silicon General Purpose High Voltage Transistors This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 and SC−59 packages which are designed for low power surface
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MSD42WT1G,
MSD42T1G
SC-70/SOT-323
MSD42WT1/D
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AND8004/D
Abstract: V = Device Code date code marking toshiba Nand PIN DIODE MARKING CODE wk marking sbn h1d marking AND8004 MC74HC1G00
Text: MC74HC1G00 2-Input NAND Gate The MC74HC1G00 is a high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G00
MC74HC
353/SC
AND8004/D
V = Device Code
date code marking toshiba Nand
PIN DIODE MARKING CODE wk
marking sbn
h1d marking
AND8004
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T138A
Abstract: U04 fairchild Wafer Fab Plant Codes ST PIN DIODE MARKING CODE wk U04 fairchild MARKING ALPHA NEW YEAR DATE CODE DIODE M7 SMP marking code vhc V = Device Code
Text: MC74HC1GU04 Unbuffered Inverter The MC74HC1GU04 is a high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1GU04
MC74HC
353/SC
T138A
U04 fairchild
Wafer Fab Plant Codes ST
PIN DIODE MARKING CODE wk
U04 fairchild MARKING
ALPHA NEW YEAR DATE CODE
DIODE M7 SMP
marking code vhc
V = Device Code
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MC74HC
Abstract: marking t132 marking code V6 diode V = Device Code
Text: MC74HC1G04 Inverter The MC74HC1G04 is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G04
MC74HC
353/SC
marking t132
marking code V6 diode
V = Device Code
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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dtc124eka
Abstract: B 557 PNP TRANSISTOR transistor 556 DTC124EE EMT3
Text: DTC124EE DTC124EUA DTC124EKA Digital transistor, NPN, with 2 resistors Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTC124EE (EMT3) l.6±0.2 package marking: DTC124EE, DTC124EUA, and DTC124EKA; 25
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OCR Scan
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DTC124EE
DTC124EUA
DTC124EKA
SC-70)
SC-59)
DTC124EE,
DTC124EUA,
DTC124EKA;
DTC124EE
DTC124EUA
dtc124eka
B 557 PNP TRANSISTOR
transistor 556
DTC124EE EMT3
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