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    MARKING 1R NPN Search Results

    MARKING 1R NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy

    MARKING 1R NPN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Low Noise Transistors NPN Silicon z Pb-Free Package is Available. LMBT5088LT1G LMBT5089LT1G ORDERING INFORMATION Device Marking LMBT5088LT1G 1Q LMBT5089LT1G LMBT5088LT3G 1R 1Q LMBT5089LT3G 1R Shipping 3000/Tape & Reel 3000/Tape & Reel


    Original     		PDF LMBT5088LT1G LMBT5089LT1G LMBT5088LT3G LMBT5089LT3G 3000/Tape 10000/Tape

    MMBT6428

    Abstract: mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088
    Text: Surface Mount Low Noise Transistors Part No., Marking Code and Polarity NPN hFE NF Max. Condition Frequency PNP dB MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 1K 1K 1L 1U 1U 1Q 1Q 1R 1R MMBT5086 KST5086 MMBT5087 TMPT5087


    Original     		PDF MMBT6428 KST6428 MMBT6429 MMBT2484 KST2484 MMBT5088 KST5088 MMBT5089 KST5089 MMBT5086 MMBT6428 mmbth10 KST2484 KST5086 KST5088 KST5089 KST6428 MMBT2484 MMBT5086 MMBT5088

    c 5088

    Abstract: CMBT5088 CMBT5089
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT5088 CMBT5089 C-120 c 5088 CMBT5088 CMBT5089

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transisto rs Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT5088 CMBT5089 C-120

    c 5088

    Abstract: CMBT5088 CMBT5089
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT5088 CMBT5089 NPN SILICON PLANAR EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBT5088 = 1Q CMBT5089 = 1R PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm


    Original     		PDF ISO/TS16949 OT-23 CMBT5088 CMBT5089 C-120 c 5088 CMBT5088 CMBT5089

    BCW60BLT1

    Abstract: BCW60CLT1 BCW60DLT1 marking 1R PNP marking code 1Y
    Text: BCW60LT1 NPN Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the PNP transistors BCW61LT1 are recommended.


    Original     		PDF BCW60LT1 BCW61LT1 OT-23 BCW60BLT1 BCW60CLT1 BCW60DLT1 100MHz 200Hz marking 1R PNP marking code 1Y

    Untitled

    Abstract: No abstract text available
    Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)


    Original     		PDF MMBT5088 MMBT5089 MMBT5088) MMBT5089) OT-23 QW-R206-033

    100khz 5v transistor npn

    Abstract: 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 Î ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Cllector-Base Voltage :KST5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


    Original     		PDF KST5088/5089 OT-23 KST5088 KST5089 100khz 5v transistor npn 1R Transistor 100khz 5v transistor KST5089 KST5088 5089 npn marking 1R NPN transistor code mark NF

    transistor 033

    Abstract: MMBT5088 MMBT5089 marking 1R NPN
    Text: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089)


    Original     		PDF MMBT5088 MMBT5089 MMBT5088) MMBT5089) OT-23 QW-R206-033 transistor 033 MMBT5089 marking 1R NPN

    MMBT5089

    Abstract: MMBT5088
    Text: Transistors IC SMD Type NPN General Purpose Amplifier MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


    Original     		PDF MMBT5088 MMBT5089 OT-23 MMBT5088 MMBT5089

    Untitled

    Abstract: No abstract text available
    Text: Product specification MMBT5088,MMBT5089 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original     		PDF MMBT5088 MMBT5089 OT-23 MMBT5088

    Untitled

    Abstract: No abstract text available
    Text: MCP6401/1R/1U/2/4/6/7/9 1 MHz, 45 µA Op Amps Features Description • • • • • • The Microchip Technology Inc. MCP6401/1R/1U/2/4/6/7/9 family of operational amplifiers op amps has low quiescent current (45 µA, typical) and rail-to-rail input and output


    Original     		PDF MCP6401/1R/1U/2/4/6/7/9 MCP6401/1R/1U/2/4/6/7/9 Temperatur9305 DS22229D-page

    VSS010

    Abstract: marking AAW VSS030
    Text: MCP6401/1R/1U/2/4/6/7/9 1 MHz, 45 µA Op Amps Features Description • • • • • • The Microchip Technology Inc. MCP6401/1R/1U/2/4/6/7/9 family of operational amplifiers op amps has low quiescent current (45 µA, typical) and rail-to-rail input and output


    Original     		PDF MCP6401/1R/1U/2/4/6/7/9 MCP6401/1R/1U/2/4/6/7/9 sing78-366 DS22229D-page VSS010 marking AAW VSS030

    2n 5088 transistor

    Abstract: SOT-23 CEB
    Text: 2N5088/89 / MMBT5088/89 NPN SMALL SIGNAL TRANSISTOR POWER SEMICONDUCTOR Features • • • • MMBT5088 / MMBT5089 Low Noise High Gain Epitaxial Planar Die Construction Available in both Through-Hole and Surface Mount Packages General Purpose, Low Noise Amplifier


    Original     		PDF 2N5088/89 MMBT5088/89 MMBT5088 MMBT5089 OT-23 O-92/SOT-23, MIL-STD-202, MMBT5089 2n 5088 transistor SOT-23 CEB

    TMPTA06

    Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560
    Text: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V|BR CBO V|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE


    OCR Scan     		PDF T-23/TO -236A TMPT2222A TMPT3904 TMPT4401 TMPT5089 TMPT6427 TMPTA06 TMPTA42 marking 1p marking 1R NPN BEC npn V7560

    marking code CB en ic

    Abstract: No abstract text available
    Text: KST5088/5089 NPN EPITAXIAL SILICO N TRANSÌSTOR LOW NOISE TRANSISTOR S O T -2 3 ABSOLUTE MAXIMUM RATINGS Ta = 25°C r Characteristic Symbol Collector-Base Voltage Rating Unit 35 30 V V 30 25 4.5 50 350 150 •V V cB O KST5088 KST5089 Collector-Emitter Voltage


    OCR Scan     		PDF KST5088/5089 KST5088 KST5089 ST5089 marking code CB en ic

    transistor H-R

    Abstract: KST5088 KST5089 marking SAI
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Rating Unit - Collector-Base Voltage VcbO KST5088 KST5089 Collector-Emitter Voltage 35 30 . V ce O KST5088 KST5089 Emitter-Base Voltage


    OCR Scan     		PDF KST5088/5089 KST5088 KST5089 100mA, ST5089 transistor H-R KST5088 KST5089 marking SAI

    100khz 5v transistor npn

    Abstract: KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking
    Text: NPN EPITAXIAL SILICON TRANSISTOR KST5088/5089 LOW NOISE TRANSISTOR S O T-23 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase Voltage : KST5088 : KST5089 C ollector-E m ltter Voltage : KST5088 : KST5089 Em itter-Base Voltage C ollecto r C urrent


    OCR Scan     		PDF KST5088/5089 KST5088 KST5089 OT-23 100nA, 100khz 5v transistor npn KST5088 KST5089 Transistor marking 0.5 marking code SJ low vce transistor fairchild marking

    BC 5089

    Abstract: No abstract text available
    Text: KST5088/5089 NPN EPITAXIAL SILICON TRANSISTO R LOW NO ISE TRANSISTO R ABSO LU TE MAXIMUM RATINGS TAB251C Characteristic Sym bol Cllector-Base Voltage K ST 5088 :KST5089 Collector-Emitter Voltage :KST5088 :KST5089 Emitter-Base Voltage Collector Current Collector Dissipation


    OCR Scan     		PDF KST5088/5089 TAB251C) KST5089 KST5088 BC 5089

    Untitled

    Abstract: No abstract text available
    Text: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481


    OCR Scan     		PDF MMBT2369 BC818-16 BC818-25 BC818-40 BC848A BC848B BC848C BCW31 BCW32 BCW33

    marking qd sc59

    Abstract: rn1425 RN1426
    Text: SILICON NPN EPITAXIAL TYPE RN1421-RN1427 Unit in mm SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT +0.5 2 . 5 - 0.3 AND DRIVER CIRCUIT APPLICATIONS. • High Current Type I^(MAX. =800mA) • With Built-in Baias Resistors • Simplify Circuit Design • Reduce a Quantity of Parts Namufacturing Process


    OCR Scan     		PDF RN1421-RN1427 800mA) RN2421 RN1421 RN1422 RN1423 RN1425 RN1426 RN1427 SC-59 marking qd sc59

    TMPT6429

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25


    OCR Scan     		PDF 0003b0L TMPT2221A TMPT2222 TMPT2222A TMPT2484 TMPT3903 TMPT3904 TMPT4124 TMPT4401 TMPT5088 TMPT6429

    IMX6

    Abstract: MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z
    Text: IMX6 Transistor, dual, NPN Features Dimensions Units : mm • available in SMT6 (IMD, SC-74) package • package marking: X6 • package contains two independent NPN transistors (2SC2413K) • same size as UMT3 (UMT, SC-70) so same placement machine can be


    OCR Scan     		PDF SC-74) 2SC2413K) SC-70) D015032 IMX6 MARKING Pa 6pin TRANSISTOR 6pin ic marking code P2 2SC2413K T108 A10Z

    marking 1A

    Abstract: TMPT918 pt2222a
    Text: NPN TRANSISTORS S O T -2 3/T O -23 6 A B 3 ELECTRICAL CHARACTERISTICS at T . = 25°C V V BR CBO v lBR)CEO Vishiebo Max. @ V CB Device Type v CE(sat) DC Current Gain ^CBO hFE hFE @ lc @ v ce Max. @ lc Min. Max. (mA) (V) (V) (nA) (V) 20 5.0 100 20 110 220 2.0


    OCR Scan     		PDF BCW31 BCW32 BCW33 BCW60A BCW60B BCW60C BCW60D BCW65A BCW65B BCW66F marking 1A TMPT918 pt2222a