MARKING 1P NPN Search Results

MARKING 1P NPN Result Highlights (5)

Part	Manufacturer	Description
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini

MARKING 1P NPN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MARKING 1P Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P	Original	OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz	PDF
Transistor hFE CLASSIFICATION Marking CE Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P Contextual Info: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant	Original	MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P	PDF
marking 1p sot23 Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p Contextual Info: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p	PDF
Contextual Info: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	FMBT2222A FMBT2222A OT-23 FMMBT2907A) -55to V50mA 500mA 100MHz 150mA	PDF
kst2222a Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	KST2222A OT-23 KST2222A	PDF
UTC 225 Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE	Original	MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225	PDF
KST2222A Abstract: transistor kst2222a Contextual Info: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage	Original	KST2222A OT-23 KST2222A transistor kst2222a	PDF
1P NPN Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC Contextual Info: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE	Original	MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC	PDF

TMPTA06 Abstract: TMPT2222A marking 1p TMPTA42 marking 1R NPN TMPT6427 tmpt3904 BEC npn V7560 Contextual Info: NPN TRANSISTORS SO T-23/TO -236A B ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain *CB0 V\|BR CBO V\|BR)CEO Device Type Marking V) TMPT2222A 1P 75 40 TMPT3904 1A 60 40 TMPT4401 2X 60 TMPT5089 1R TMPT6427 TMPTA06 TMPTA42 1D V (BR)EBO Max. V cb hFE	OCR Scan	T-23/TO -236A TMPT2222A TMPT3904 TMPT4401 TMPT5089 TMPT6427 TMPTA06 TMPTA42 marking 1p marking 1R NPN BEC npn V7560	PDF
SMBT4403 Abstract: SMBT5401 SMBT4401 marking 2G SOT23 Contextual Info: SURFACE MOUNT TRANSISTORS NPN TRANSISTORS - SOT-23 PACKAGE CASE 37 SURGE PART NUMBER V CEO V l o p e r a t in g ^C F S A T y /s & Vv ce ! G to r ag e tem per atu r e ’ c es w Marking Code Volts SMBT2222A 1P 40 1 0 0 -3 0 0 10/1 50 1.0 SMBT3904 SMBT4401	OCR Scan	OT-23 SMBT2222A SMBT3904 SMBT4401 SMBTA05 SMBTA06 SMBT5551 SMBTA42 OT-23 SMBT4403 SMBT5401 marking 2G SOT23	PDF
LMBT2222ATT1G Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.	Original	LMBT2222ATT1G S-LMBT2222ATT1G SC-89 AEC-Q101 LMBT2222ATT3G S-LMBT2222ATT3G 463C-02. LMBT2222ATT1G	PDF
LMBT2222AWT1G Abstract: marking 1p npn transistor 1P F Contextual Info: LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistors NPN Silicon LMBT2222AWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which 3 COLLECTOR is designed for low power surface mount	Original	LMBT2222AWT1G 323/SC LMBT2222AWT1G marking 1p npn transistor 1P F	PDF
M1B marking Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G Contextual Info: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage	Original	MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 M1B marking 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G	PDF
TRANSISTOR 1P Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.	Original	LMBT2222ATT1G SC-89 SC-89 LMBT2222ATT3G 463C-01 463C-02. TRANSISTOR 1P TRANSISTOR code marking 1P 3 marking code 1P 1P surface mount transistor	PDF
Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate	Original	MMBT2222A 300mW, OT-23 MIL-STD-202,	PDF
Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor SOT-23 Small Signal Product Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Matte Tin Sn lead finish with Nickel(Ni) underplate ◇ Pb free version and RoHS compliant	Original	MMBT2222A 300mW, OT-23 MIL-STD-202, C/10s	PDF
TRANSISTOR code marking 1P 3 Abstract: marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23 Contextual Info: MMBT2222A 300mW, NPN Small Signal Transistor Small Signal Transistor SOT-23 3 Collector A 1 Base F 2 Emitter B Features E Epitaxial planar die construction Surface device type mounting C Moisture sensitivity level 1 G D Matte Tin Sn lead finish with Nickel(Ni) underplate	Original	MMBT2222A 300mW, OT-23 MIL-STD-202, TRANSISTOR code marking 1P 3 marking code 1p TRANSISTOR MARKING CODE 1P MMBT2222A transistor 1P Transistor MARKING 1P marking transistor 1p 1 1p transistor 1p transistor sot23 marking 1p transistor sot23	PDF
marking 1p npn Abstract: MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT Contextual Info: MMBT2222AT NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features • · · Epitaxial Planar Die Construction Complementary PNP Type Available MMBT2907AT Ultra-Small Surface Mount Package SOT-523 Dim Min Max Typ A A 0.15 0.30 0.22 C B 0.75 0.85 0.80 C 1.45 1.75	Original	MMBT2222AT MMBT2907AT) OT-523 OT-523, J-STD-020A MIL-STD-202, 100mA 300mA DS30268 marking 1p npn MARKING CODE 1P TRANSISTOR code marking 1P 3 J-STD-020A MMBT2222AT MMBT2222AT-7 MMBT2907AT	PDF

MARKING 1P NPN Search Results

MARKING 1P NPN Result Highlights (5)

MARKING 1P NPN Datasheets Context Search

MARKING 1P

Transistor hFE CLASSIFICATION Marking CE

marking 1p sot23

kst2222a

UTC 225

KST2222A

1P NPN

TMPTA06

SMBT4403

LMBT2222ATT1G

LMBT2222AWT1G

M1B marking

TRANSISTOR 1P

TRANSISTOR code marking 1P 3

marking 1p npn