Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z Pb-Free Package is Available. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel 3000/Tape & Reel 1M LMBTA14LT3G 1N 10000/Tape & Reel
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LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
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LMBTA14LT1G
Abstract: LMBTA13LT1G LMBTA14 50K MARKING SOT23
Text: LESHAN RADIO COMPANY, LTD. Darlington Amplifier Transistors z We declare that the material of product compliance with RoHS requirements. LMBTA13LT1G LMBTA14LT1G ORDERING INFORMATION Device Marking Shipping LMBTA13LT1G 1M LMBTA14LT1G LMBTA13LT3G 1N 3000/Tape & Reel
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LMBTA13LT1G
LMBTA14LT1G
LMBTA13LT3G
3000/Tape
LMBTA14LT3G
10000/Tape
LMBTA14LT1G
LMBTA13LT1G
LMBTA14
50K MARKING SOT23
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
QW-R206-006
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MMBTA13
Abstract: No abstract text available
Text: UTC MMBTA13 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MMBTA13 is a Darlington transistor. 2 FEATURES 1 *Collector-Emitter Voltage: VCES = 30V *Collector Dissipation: Pc mas = 350 mW 3 MARKING 1M SOT-23 1: EMITTER 2: BASE
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MMBTA13
MMBTA13
OT-23
100ms
QW-R206-006
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CMBTA13
Abstract: CMBTA14
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N–P–N SMALL–SIGNAL DARLINGTON TRANSISTORS N–P–N transistors Marking CMBTA13 = 1M CMBTA14 = 1N PACKAGE OUTLINE DETAILS
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OT-23
CMBTA13
CMBTA14
CMBTA13
CMBTA14
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N–P–N SMALL–SIGNAL DARLINGTON TRANSISTORS N–P–N transisto rs Marking CMBTA13 = 1M CMBTA14 = 1N PACKAGE OUTLINE DETAILS
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OT-23
CMBTA13
CMBTA14
CMBTA13
CMBTA14
C-120
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CMBTA13
Abstract: CMBTA14 CMBTA
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA13 CMBTA14 N–P–N SMALL–SIGNAL DARLINGTON TRANSISTORS N–P–N transistors Marking CMBTA13 = 1M CMBTA14 = 1N PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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ISO/TS16949
OT-23
CMBTA13
CMBTA14
CMBTA13
CMBTA14
C-120
CMBTA
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT620 80V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > 80V IC = 1.5A Continuous Collector Current RCE SAT = 90mΩ for a low equivalent On-Resistance
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FMMT620
625mW
AEC-Q101
J-STD-020
MIL-STD-202,
DS33113
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MARKING CODE 618 SOT23
Abstract: FMMT618 AEC-Q101 application note LED reliability marking 618
Text: A Product Line of Diodes Incorporated FMMT618 20V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • BVCEO > 20V IC = 2.5A Continuous Collector Current RCE SAT = 50mΩ for a low equivalent On-Resistance
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FMMT618
625mW
FMMT718
AEC-Q101
J-STD-020
DS33111
MARKING CODE 618 SOT23
FMMT618
AEC-Q101 application note LED reliability
marking 618
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT459 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEV > 500V BVECV > 6V reverse blocking IC = 150mA high Continuous Collector Current ICM Up to 500mA Peak Pulse Current
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FMMT459
150mA
500mA
625mW
-90mV
120mA
AEC-Q101
DS33089
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FMMT619
Abstract: fmmt720
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current 625mW power dissipation
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FMMT619
625mW
200mV
FMMT720
AEC-Q101
DS33236
FMMT619
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP749F 25V PNP LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > -25V BVCEO > -35V forward blocking voltage IC = -3A Continuous Collector Current
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ZXTP749F
-150mV
725mW
ZXTN649F
AEC-Q101
DS31901
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FMMT619TA
Abstract: FMMT619TC FMMT619 FMMT720
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
FMMT619TA
FMMT619TC
FMMT619
FMMT720
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IC 7495 pin configuration
Abstract: ic 7495 ZXTN25040DFH 50mmx50mm ZXTP25040DFH
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
IC 7495 pin configuration
ic 7495
ZXTN25040DFH
50mmx50mm
ZXTP25040DFH
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FMMT559
Abstract: FMMT459QTA npn high voltage transistor 500v sot23 NPN VCEO 500V sot23
Text: A Product Line of Diodes Incorporated FMMT459 500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23 Feature Mechanical Data • • • • • • • • • • • • • • • • • BVCEV > 500V BVECV > 6V reverse blocking IC = 150mA high Continuous Collector Current
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FMMT459
150mA
500mA
625mW
-90mV
120mA
FMMT559
AEC-Q101
DS33089
FMMT459QTA
npn high voltage transistor 500v sot23
NPN VCEO 500V sot23
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SOT23 marking 619
Abstract: marking 619 npn sot23
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
SOT23 marking 619
marking 619 npn sot23
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT619 50V NPN SILICON LOW SATURATION TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • BVCEO > 50V IC = 2A Continuous Collector Current Low Saturation Voltage VCE sat < 200mV @ 1A
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FMMT619
200mV
625mW
FMMT720
AEC-Q101
DS33236
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN25040DFH 40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • • • • • • • • • • • • • • • BVCEO > 40V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 55mV @ 1A
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ZXTN25040DFH
ZXTP25040DFH
AEC-Q101
DS33697
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN649F 25V NPN LOW SATURATION TRANSISTOR IN SOT23 Features Mechanical Data • • • • • • • • • • • • • • • • BVCEO > 25V BVCBO > 35V forward blocking voltage IC = 3A high Continuous Collector Current
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ZXTN649F
120mV
725mW
ZXTP749F
AEC-Q101
DS31900
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marking 1d4
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A
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ZXTN07045EFF
OT23F
ZXTP07040DFF
AEC-Q101
J-STD-020
DS33674
marking 1d4
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marking 1d4
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTN07045EFF 45V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23F Features and Benefits Mechanical Data • • • • • • • • • • • • • BVCEO > 45V IC = 4A Continuous Collector Current Low Saturation Voltage VCE sat < 80mV @ 1A
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ZXTN07045EFF
OT23F
ZXTP07040DFF
AEC-Q101
DS33674
marking 1d4
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Feature Mechanical Data • BVCEO > 60V • • IC = 1A Continuous Collector Current • • ICM = 2A Peak Pulse Current Case: SOT23 Case Material: molded plastic, “Green” molding compound
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FMMT491
500mW
FMMT591
AEC-Q101
DS33091
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Marking a1s
Abstract: 330 marking diode 7.a sot-23
Text: SIEM EN S Silicon Switching Diode Array BAW 56 • For high-speed switching applications • Common anode Type Marking Ordering Code tape and reel BAW 56 A1s Q62702-A688 Pin Configuration Package1) 3 » M SOT-23 1M » EH A07006 Maximum Ratings per Diode
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Q62702-A688
OT-23
A07006
EH80009I
BAW56
Marking a1s
330 marking diode
7.a sot-23
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1031m
Abstract: S0T23-5 VCR Marking S0T23-5 TK110 TK11031M
Text: T K 1 1 0 3 1M TABLE OF CONTENTS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. Purpose TOKO Part Number Function Applications Structure Package Outline Absolute Maximum Ratings Electrical Characteristics Test Circuit Pin Assignment Block Diagram Package Outline Dimensions / Marking
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TK1103
DB3-J070
TK11031M.
TK11031M
TK110*
QH7-B114.
1031m
S0T23-5 VCR Marking
S0T23-5
TK110
TK11031M
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