STK and STR integrated circuits
Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram
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Original
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OD-80
OT-223
OT-89
STK and STR integrated circuits
transistor smd zG 1e
STR-Z4579
Turuta
6 pin TRANSISTOR SMD CODE PA
transistor 5d smd
ELM85361A
STK and STR integrated circuits, 2011 edition
5g smd transistor
15D diode smd code
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PDF
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SOT23R
Abstract: 12E MARKING ZC2812E wa sot23 SOT23 WA marking 54 sot23 DSA003721
Text: ZEl SOT23 DUAL SCHOTTKY BARRIER DIODES MUE 3- NOVEWER 1995 1 h f+ 23 32 ZC2tl13E ——— ZC2812E ————— Commo,? Anodl —— — k~ Operating and Storage RATINGS. Temperature Type -. 12E Part Marking r Range Device ——. Series — 1:4E ABSOLUTE MAXIMUM
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Original
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ZC2tl13E
ZC2812E
ZC281
SOT23R
12E MARKING
ZC2812E
wa sot23
SOT23 WA
marking 54 sot23
DSA003721
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PDF
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MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
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Original
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ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
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PDF
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MUBW30-12E6K
Abstract: 9V bridge rectifier ic IXYS IGBT MUBW E72873
Text: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)
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Original
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MUBW30-12E6K
IDAVM25=
E72873
20071113a
MUBW30-12E6K
9V bridge rectifier ic
IXYS IGBT MUBW
E72873
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PDF
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MUBW30-12E6K
Abstract: 12e6k E72873 30-12E6K
Text: MUBW30-12E6K Converter - Brake - Inverter Module CBI 1 SPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = 130 A IC25 IFSM = 19 A IC25 = 29 A = 300 A VCE(sat) = 2.9 V VCE(sat) = 2.9 V Part name (Marking on product)
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Original
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MUBW30-12E6K
IDAVM25=
E72873
20071113a
MUBW30-12E6K
12e6k
E72873
30-12E6K
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PDF
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BC858BL3
Abstract: BC847BL3 BC848BL3 BC857BL3
Text: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package
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BC857BL3,
BC858BL3
BC847BL3,
BC848BL3
BC857BL3
BC858BL3
BC847BL3
BC848BL3
BC857BL3
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PDF
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Untitled
Abstract: No abstract text available
Text: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package
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Original
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BC857BL3,
BC858BL3
BC847BL3,
BC848BL3
BC857BL3
BC858BL3
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PDF
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11E-10
Abstract: BC857BL3 BC847BL3 BC848BL3 BC858BL3
Text: BC857BL3, BC858BL3 PNP Silicon AF Transistors Preliminary data • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration
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Original
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BC857BL3,
BC858BL3
BC847BL3,
BC848BL3
BC857BL3
11E-10
BC857BL3
BC847BL3
BC848BL3
BC858BL3
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847BL3, BC848BL3 NPN Silicon AF Transistor • For AF input stage and driver applications • High current gain 3 • Low collector-emitter saturation voltage 1 2 • Complementary types: BC857BL3, BC858BL3 PNP Type Marking Pin Configuration Package BC847BL3
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Original
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BC847BL3,
BC848BL3
BC857BL3,
BC858BL3
BC847BL3
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PDF
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Untitled
Abstract: No abstract text available
Text: BC857BL3, BC858BL3 PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • Complementary types: BC847BL3, 2 BC848BL3 NPN Type Marking Pin Configuration Package
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Original
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BC857BL3,
BC858BL3
BC847BL3,
BC848BL3
BC857BL3
BC858BL3
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PDF
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E72873
Abstract: MWI50-12E6K
Text: MWI 50-12E6K IGBT Module Sixpack IC25 = 51 A VCES = 1200 V VCE sat typ. = 2.4 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 50-12E6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.
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Original
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50-12E6K
E72873
20071113a
MWI50-12E6K
E72873
MWI50-12E6K
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847BL3, BC848BL3 NPN Silicon AF Transistor • For AF input stage and driver applications 3 • High current gain • Low collector-emitter saturation voltage 1 • complementary types: BC857BL3, 2 BC858BL3 PNP Type Marking Pin Configuration Package BC847BL3
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Original
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BC847BL3,
BC848BL3
BC857BL3,
BC858BL3
BC847BL3
BC848BL3
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PDF
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12e6k
Abstract: 30-12E6K E72873
Text: MWI 30-12E6K IGBT Module Sixpack IC25 = 29 A VCES = 1200 V VCE sat typ. = 2.5 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.
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Original
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30-12E6K
E72873
20071113a
MWI30-12E6K
12e6k
30-12E6K
E72873
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PDF
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12e6k
Abstract: E72873 MWI50-12E6K
Text: MWI 50-12E6K IGBT Module Sixpack IC25 = 51 A = 1200 V VCES VCE sat typ. = 2.4 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 50-12E6K 14 18 22 13 17 21 t 10, 23 u 8 11, 12 15, 16 19, 20 7 4 5 3 Pin configuration see outlines.
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Original
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50-12E6K
E72873
20071113a
MWI50-12E6K
12e6k
E72873
MWI50-12E6K
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PDF
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h12e
Abstract: ic power 22E SMBT3904PN VPS05604 h11e h22e
Text: SMBT3904PN NPN/PNP Silicon Switching Transistor Array 4 High current gain 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 Tape loading orientation VPS05604 Marking on SOT-363 package
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Original
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SMBT3904PN
VPS05604
OT-363
EHA07193
EHA07177
OT363
EHP00763
EHP00764
Aug-21-2002
h12e
ic power 22E
SMBT3904PN
VPS05604
h11e
h22e
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
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smbt3904upn
Abstract: No abstract text available
Text: SMBT3904UPN NPN/PNP Silicon Switching Transistor Array High current gain 4 5 6 Low collector-emitter saturation voltage Two galvanic internal isolated NPN/PNP Transistors in one package 3 2 1 Tape loading orientation VPW09197 Marking on SC74 package
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Original
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SMBT3904UPN
VPW09197
EHA07177
smbt3904upn
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PDF
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marking code s2a SOT23
Abstract: smbt3906 MMBT3906 infineon
Text: SMBT3906/ MMBT3906 PNP Silicon Switching Transistor 3 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: 2 SMBT3904/ MMBT3904 NPN 1 Type SMBT3906/ MMBT3906 Marking s2A Pin Configuration 1=B 2=E
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Original
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SMBT3906/
MMBT3906
SMBT3904/
MMBT3904
VPS05161
marking code s2a SOT23
smbt3906
MMBT3906 infineon
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PDF
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Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
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OCR Scan
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ZC2812E
ZC2813E
lplt-20m
ZC2811E
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PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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PDF
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marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
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OCR Scan
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ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT 92 PNP Silicon RF Transistor • For broadband amplifiers up to 2GHz at collector currents up to 20mA • Complementary type: BFR 92P NPN ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration
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OCR Scan
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Q62702-F1062
OT-23
BFT92
H35bD5
900MHz
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PDF
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transistor bc 499
Abstract: 1CS K2 marking 1cs transistor Bc 580
Text: SIEMENS BC 847S NPN Silicon AF Transistor Array 1For AF input stages and driver applications •High current gain • Low collector-emitter saturation voltage >Two galvanic internal isolated Transistors in one package A R n 3 tr ETH "j>- Type Marking Ordering Code
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OCR Scan
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Q62702-C2372
OT-363
BC847S
transistor bc 499
1CS K2
marking 1cs
transistor Bc 580
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon Switching Transistor SMBT 3906 • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • Complementary type: SMBT 3904 NPN Type Marking Ordering Code (tape and reel) PinCtonfigu ration 1 2 3 Package1)
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OCR Scan
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Q68000-A4417
OT-23
EHP00770
EHP00772
S35bOÂ
01EES4S
A235b05
012254b
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PDF
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